Image sensor including pixels having a plurality of capacitors
An image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the pixels includes a photodiode, a transfer transistor, first to third floating diffusion nodes, a first capacitor, a second capacitor, a third capacitor, a first switch transistor, a second switch transistor, and a reset transistor. The second switch transistor is configured to turn off in a first period and to turn on in a second period of an exposure period of the photodiode, and the reset transistor is configured to turn on in the first period and to turn off in the second period of the exposure period of the photodiode.
1 . An image sensor including a pixel array in which a plurality of pixels are arranged, wherein
each of the plurality of pixels comprises:
a photodiode;
a transfer transistor connected between the photodiode and a first floating diffusion node;
a first switch transistor connected between the first floating diffusion node and a second floating diffusion node;
a second switch transistor connected between the second floating diffusion node and a third floating diffusion node;
a first capacitor connected to the second floating diffusion node;
a second capacitor connected to the third floating diffusion node; and
a reset transistor having one end connected to the third floating diffusion node and another end to which a pixel voltage is applied,
wherein, the reset transistor is configured to turn on in a first period of an exposure period of the photodiode and to turn off in a second period of the exposure period,
the first switch transistor is configured to turn on in the first period and the second period of the exposure period, and
the second switch transistor is configured to turn off in the first period of the exposure period and to turn on in the second period of the exposure period.
2 . The image sensor of claim 1 , wherein
the image sensor comprises:
a row driver configured to provide a select signal to the pixel array; and
a readout circuit configured to readout pixel signals output from pixels of a row line selected by the row driver.
3 . The image sensor of claim 1 , wherein
the first switch transistor is configured to turn off in a first period of a readout period of the photodiode, in which each pixel operates in a high conversion gain (HCG) mode, and is configured to turn on in a second period of the readout period of the photodiode, in which each pixel operates in a low conversion gain (LCG) mode.
4 . The image sensor of claim 3 , wherein
the second switch transistor is configured to turn off in the first period and the second period of the readout period of the photodiode, and is configured to turn on in a third period of the readout period of the photodiode, in which each pixel operates in an ultra low conversion gain (ULCG) mode.
5 . The image sensor of claim 4 , wherein, in the third period of the readout period of the photodiode, the first switch transistor is configured to turn on.
6 . The image sensor of claim 1 , wherein the transfer transistor, the reset transistor, the first switch transistor, and the second switch transistor are configured to turn on in a reset period before the exposure period.
7 . The image sensor of claim 1 , wherein a capacitance of the first floating diffusion node is less than a capacitance of the first capacitor.
8 . The image sensor of claim 7 , wherein the capacitance of the first capacitor is less than a capacitance of the second capacitor.
9 . The image sensor of claim 2 , wherein the readout circuit is configured to generate image data based on first pixel signals read out in a first period of a readout period, second pixel signals read out in a second period of the readout period, and third pixel signals read out in a third period of the readout period.
10 . The image sensor of claim 9 , wherein
the first pixel signals correspond to a first illuminance range,
the second pixel signals correspond to a second illuminance range that is higher than the first illuminance range, and
the third pixel signals correspond to a third illuminance range that is higher than the second illuminance range.
11 . An image sensor comprising:
a pixel array in which a plurality of pixels are arranged;
a row driver configured to provide a select signal to the pixel array; and
a readout circuit configured to read out pixel signals output from pixels of a row line selected by the row driver,
wherein each of the plurality of pixels comprises:
a photodiode;
a transfer transistor connected between the photodiode and a first floating diffusion node;
a first switch transistor connected between the first floating diffusion node and a second floating diffusion node;
a second switch transistor connected to the second floating diffusion node and a third floating diffusion node;
a first capacitor connected to the second floating diffusion node;
a second capacitor connected to the third floating diffusion node;
a reset transistor having one end connected to the second floating diffusion node and another end to which a pixel voltage is configured to be applied;
a source follower transistor having one end connected to the first floating diffusion node and another end to which the pixel voltage is configured to be applied; and
a selection transistor having one end connected to the source follower transistor,
wherein, the reset transistor is configured to turn on in a first period of an exposure period of the photodiode and to turn off in a second period of the exposure period,
the first switch transistor is configured to turn on in the first period and the second period of the exposure period, and
the second switch transistor is configured to turn on in the first period and the second period of the exposure period.
12 . The image sensor of claim 11 , wherein the first switch transistor is configured to turn off in a first period of a readout period of the photodiode, in which each pixel operates in a high conversion gain (HCG) mode, and to turn on in a second period of the readout period of the photodiode, in which each pixel operates in a low conversion gain (LCG) mode.
13 . The image sensor of claim 12 , wherein the second switch transistor is configured to turn off in the first period and the second period of the readout period of the photodiode, and to turn on in a third period of the readout period of the photodiode, in which each pixel operates in an ultra low conversion gain (ULCG) mode.
14 . The image sensor of claim 13 , wherein the readout circuit is configured to generate image data based on first pixel signals read out in the first period of a readout period, second pixel signals read out in the second period of a readout period, and third pixel signals read out in the third period of the readout period.
15 . The image sensor of claim 14 , wherein
the first pixel signals correspond to a first illuminance range,
the second pixel signals correspond to a second illuminance range that is higher than the first illuminance range, and
the third pixel signals correspond to a third illuminance range that is higher than the second illuminance range.
16 . The image sensor of claim 11 , wherein a capacitance of the first floating diffusion node is less than a capacitance of the first capacitor, and the capacitance of the first capacitor is less than a capacitance of the second capacitor.
17 . The image sensor of claim 11 , wherein at least one of the first capacitor, and the second capacitor comprise cylindrical or metal-insulator-metal capacitors.
18 . An image sensor including a pixel array in which a plurality of pixels are arranged and a readout circuit, wherein
each of the plurality of pixels comprises:
a photodiode;
a transfer transistor connected between the photodiode and a first floating diffusion node;
a first switch transistor connected between the first floating diffusion node and a second floating diffusion node;
a second switch transistor connected between the second floating diffusion node and a third floating diffusion node;
a first capacitor connected to the second floating diffusion node;
a second capacitor connected to the third floating diffusion node; and
a reset transistor having one end connected to the third floating diffusion node and another end to which a pixel voltage is applied,
wherein the first switch transistor is configured to turn off in a first period of a readout period of the photodiode, in which each pixel operates in a high conversion gain (HCG) mode, and to turn on in a second period of the readout period of the photodiode, in which each pixel operates in a low conversion gain (LCG) mode,
the second switch transistor is configured to turn on in a third period of the readout period of the photodiode, in which each pixel operates in an ultra low conversion gain (ULCG) mode, and is configured to turn off in a first period of an exposure period of the photodiode and to turn on in a second period of the exposure period of the photodiode, and
the reset transistor is configured to turn on in the first period of the exposure period and to turn off in the second period of the exposure period of the photodiode.
19 . The image sensor of claim 18 , wherein the readout circuit is configured to generate image data based on first pixel signals read out in the first period of the readout period, second pixel signals read out in the second period of the readout period, and third pixel signals read out in the third period of the readout period.
20 . The image sensor of claim 19 wherein
the image sensor is configured to output, as a first pixel signal, a voltage corresponding to an amount of charge accumulated in the first floating diffusion node in the first period of the readout period,
to output, as a second pixel signal, a voltage corresponding to the amount of charge accumulated in the first floating diffusion node and the first capacitor in the second period of the readout period, and
to output, as a third pixel signal, a voltage corresponding to the amount of charge accumulated in the first floating diffusion node, the first capacitor, and the second capacitor in the third period of the readout period.