Semiconductor package including stacked semiconductor devices and method of manufacturing the semiconductor package
A semiconductor package includes a first package substrate. A first semiconductor device is mounted on an upper surface of the first package substrate. A first molding is disposed on the first package substrate and covers the first semiconductor device. A second package substrate is disposed on the first molding. At least one second semiconductor device is mounted on an upper surface of the second package substrate. A second molding covers the second semiconductor device. The second molding has a marking pattern in the first region. The second molding has an uneven structure having a plurality of trenches that define a plurality of column structures protruding from a second region on the second semiconductor device.
1 . A method of manufacturing a semiconductor package, comprising:
sequentially disposing a first semiconductor device and an interposer on a first package substrate;
disposing a second package substrate on the interposer via conductive bumps;
disposing a second semiconductor device on the second package substrate and forming a molding covering the second semiconductor device;
forming a marking pattern by a first laser beam on a first region of an upper surface of the molding; and
forming an uneven structure by a second laser beam on a second region of the upper surface of the molding.
2 . The method of claim 1 , wherein the first laser beam has a first intensity, and
the second laser beam has a second intensity that is different from the first intensity.
3 . The method of claim 1 , wherein forming the marking pattern includes applying the first laser beam for a first irradiation time, and
forming the uneven structure includes applying the second laser beam for a second irradiation time.
4 . The method of claim 1 , wherein the molding includes an epoxy molding compound (EMC).
5 . The method of claim 1 , wherein forming the uneven structure further includes forming a plurality of rod structures extending parallel to each other in an extending direction of the molding.
6 . The method of claim 1 , wherein forming the uneven structure includes processing the upper surface of the molding to form a plurality of trenches that define a plurality of protruding column structures.
7 . The method of claim 6 , wherein each of the plurality of protruding column structures has a first height and a first width,
wherein the first height is within a range of 10 μm to 30 μm, and
wherein the first width is within a range of 15 μm to 50 μm.
8 . The method of claim 6 , wherein a distance between neighboring column structures of the plurality of column structures is within a range of 15 μm to 50 μm.
9 . The method of claim 6 , wherein each of the plurality of column structures has a truncated shape, and
wherein a ratio (A 1 /A 2 ) of an area A 1 of an upper surface of the truncated shape to an area A 2 of a lower surface of the truncated shape is within a range of 0.5 to 0.9.
10 . The method of claim 6 , wherein each of the plurality of column structures has a circular cone shape, a quadrilateral pyramid shape, a hemisphere shape, a circular truncated cone shape, or a frustum of quadrilateral pyramid shape.
11 . A method of manufacturing a semiconductor package, comprising:
disposing an interposer on a first package substrate on which a first semiconductor device is stacked;
disposing a second package substrate on which a second semiconductor device is stacked, on the interposer;
forming a molding on the second package substrate covering the second semiconductor device;
forming a marking pattern by a first laser beam having a first intensity on a first region of an upper surface of the molding; and
forming an uneven structure by a second laser beam, having a second intensity that is greater than the first intensity, on a second region of the upper surface of the molding.
12 . The method of claim 11 , wherein forming the marking pattern includes exposing the first region of the upper surface of the molding to the first laser beam for a first period of time, and
forming the uneven structure includes exposing the second region of the upper surface of the molding to the second laser beam for a second period of time.
13 . The method of claim 11 , wherein the molding includes an epoxy molding compound (EMC).
14 . The method of claim 11 , wherein forming the uneven structure further includes forming a plurality of rod structures extending parallel to each other in an extending direction of the molding.
15 . The method of claim 11 , wherein forming the uneven structure includes processing the upper surface of the molding to form a plurality of trenches that define a plurality of protruding column structures.
16 . The method of claim 15 , wherein each of the plurality of protruding column structures has a first height and a first width,
wherein the first height is within a range of 10 μm to 30 μm, and
wherein the first width is within a range of 15 μm to 50 μm.
17 . The method of claim 15 , wherein a distance between neighboring column structures of the plurality of protruding column structures is within a range of 15 μm to 50 μm.
18 . The method of claim 15 , wherein each of the plurality of protruding column structures has a truncated shape, and
wherein a ratio (A 1 /A 2 ) of an area A 1 of an upper surface of the truncated shape to an area A 2 of a lower surface of the truncated shape is within a range of 0.5 to 0.9.
19 . The method of claim 15 , wherein each of the plurality of protruding column structures has a circular cone shape, a quadrilateral pyramid shape, a hemisphere shape, a circular truncated cone shape, or a frustum of quadrilateral pyramid shape.