IP Library › Granted Patent US 12,593,718
Granted Patent B2
US 12,593,718 · App. 18/090,608 · Granted Mar 31, 2026

Memory system package structure and manufacturing method thereof

Inventors: Xinru Zeng (Hubei, CN); Zhen Xu (Hubei, CN); Weisong Qian (Hubei, CN); Peng Chen (Hubei, CN)
Assignee: Yangtze Memory Technologies Co., Ltd.
H01L23/3128H01L23/49827H01L23/552H01L24/85H01L24/92H10B80/00H01L2924/1434
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,593,718
App. No.
18/090,608
Granted
Mar 31, 2026
Kind
B2
Abstract

A memory system package structure and a manufacturing method thereof are disclosed. For example, the memory system package structure can include a memory chip, a memory controller and a distribution layer. The memory chip can include a first surface. The memory controller can be positioned on the first surface. The redistribution layer can be positioned on a side of the memory controller facing away from the memory chip. The memory chip and the memory controller can be electrically connected with the redistribution layer.

Claims (26)

1 . A memory system package structure, comprising:

a memory chip including a first surface and a second surface opposite to the first surface;

an electromagnetic shielding layer positioned on the second surface of the memory chip;

a memory controller positioned on the first surface; and

a redistribution layer positioned on a side of the memory controller facing away from the memory chip, the memory chip and the memory controller being electrically connected with the redistribution layer,

wherein the memory chip further includes a plastic packaging layer that is positioned on the side of the memory controller facing away from the memory chip and covers sides of the memory controller, sides of the memory chip and the first surface of the memory chip in a direction towards the first surface of the memory chip,

the redistribution layer is positioned on a side of the plastic packaging layer facing away from the first surface of the memory chip, and

the electromagnetic shielding layer covers at least sides of the plastic packaging layer in the direction towards the first surface of the memory chip.

2 . The memory system package structure of claim 1 , wherein a top of the electromagnetic shielding layer is electrically connected with the redistribution layer.

3 . The memory system package structure of claim 1 , wherein the electromagnetic shielding layer further covers sides of the redistribution layer.

4 . The memory system package structure of claim 3 , wherein the electromagnetic shielding layer is electrically connected with the redistribution layer from the sides of the redistribution layer.

5 . The memory system package structure of claim 1 , wherein the electromagnetic shielding layer includes a metal layer and metal compound layers disposed on both sides of the metal layer.

6 . The memory system package structure of claim 1 , further comprising:

an exposed conductive pad disposed on the first surface of the memory chip;

a first conductive structure positioned on the side of the memory controller facing away from the memory chip and electrically connected with the memory controller; and

a second conductive structure positioned on the first surface and electrically connected with the conductive pad,

wherein both the first conductive structure and the second conductive structure penetrate the plastic packaging layer in a direction perpendicular to the first surface, extend to the redistribution layer, and are electrically connected with the redistribution layer.

7 . The memory system package structure of claim 6 , further comprising metal solder balls positioned on a side of the redistribution layer facing away from the memory controller and electrically connected with the redistribution layer, wherein the memory chip and the memory controller are electrically connected with the metal solder balls through the redistribution layer.

8 . The memory system package structure of claim 7 , wherein the redistribution layer includes an insulating layer and a conductive layer formed in the insulating layer, and the conductive layer is electrically connected with the first conductive structure, the second conductive structure and the metal solder balls.

9 . The memory system package structure of claim 1 , further comprising an adhesive layer that is positioned between the first surface and the memory controller and is used for fixing the memory controller and the memory chip.

10 . The memory system package structure of claim 1 , wherein the memory chip and the memory controller are indirectly conductive to each other via the redistribution layer.

11 . The memory system package structure of claim 8 , wherein the electromagnetic shielding layer is electrically connected to the conductive layer.

12 . The memory system package structure of claim 1 , wherein the electromagnetic shielding layer includes a metal layer and metal compound layers that are formed on both sides of the metal layer.

13 . The memory system package structure of claim 12 , wherein the metal layer includes copper.

14 . The memory system package structure of claim 12 , wherein the metal compound layers include stainless steel.

15 . The memory system package structure of claim 6 , wherein the first conductive structure is disposed between the memory controller and the redistribution.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2023
From: ZENG, XINRU; XU, ZHEN; QIAN, WEISONG; CHEN, PENG
To: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Reel/Frame 063106/0250 →
Continuity (2)
Continuation PCTCN2022134200 · Nov 24, 2022
Related Publication 20240178089A1 · May 30, 2024
References Cited (14)
US 11538746B2 · Ding et al. · 2022 [cited by applicant]
US 20160049385A1 · Yu · 2016 [cited by examiner]
US 20170084589A1 · Kuo · 2017 [cited by examiner]
CN 107731770A · 2018 [cited by applicant]
CN 110050340A · 2019 [cited by applicant]
CN 112956023A · 2021 [cited by applicant]
KR 101519307B1 · 2015 [cited by applicant]
KR 1020160051656A · 2016 [cited by applicant]
KR 1020200037051A · 2020 [cited by applicant]
TW 202115837A · 2021 [cited by applicant]
TW 202238907A · 2022 [cited by applicant]
Korean Office Action issued on Jul. 18, 2024 in the corresponding Korean Patent Application No. 10-2023-7020862 (with English Summary) 10 pages. [cited by applicant]
Combined Taiwanese Office Action and Search Report issued on May 31, 2024 in the Taiwanese Patent Application No. 112124821 (with Translation of Category of Cited Documents) 12 pages. [cited by applicant]
Combined Chinese Office Action and Search Report issued on March 3, 2023 in the international Application No. PCT/CN2022/134200 (with Translation of Category of Cited Documents) 4 pages [cited by applicant]