Temperature stabilized dielectric based on-chip interferometers
A device has a dual-geometry waveguide structure with an input, an output and two coupler structures optically coupled using arms of different optical path lengths. Each arm has a first passive waveguide having a first length and a dual-core waveguide geometry, coupled by a transition structure to a second passive waveguide having a second length and a single-core waveguide geometry. Optical mode confinement is larger in the first passive waveguide than in the second passive waveguide. The first and second lengths are selected such that a temperature sensitivity of optical path length difference of the dual-geometry waveguide structure is lower than a temperature sensitivity of optical path length difference that would characterize a standard waveguide structure differing from the dual-geometry waveguide structure in that no transition structure is present within either arm of the standard waveguide structure, each arm of the standard waveguide structure either excluding any waveguide having a dual-core waveguide geometry or excluding any waveguide having a single-core waveguide geometry.
1 . A device comprising:
a dual-geometry waveguide structure comprising two coupler structures that are optically coupled using first and second arms characterized by total optical path lengths L U and L L respectively, providing an optical path length difference value L O =L U −L L ;
wherein the first arm comprises:
a first passive waveguide, having a first length and a first waveguide geometry comprising a dual-core geometry of two cores separated by a spacer layer, and being characterized by a first temperature dependence of refractive index dn 1 /dT;
a second passive waveguide, having a second length and a second waveguide geometry comprising a single-core geometry, and being characterized by a second temperature dependence of refractive index dn 2 /dT lower than dn1/dT; and
a first tapered transition structure of length L t directly coupling the first and second passive waveguides;
wherein the second arm comprises:
a third passive waveguide having a third length and the first waveguide geometry, and being characterized by dn 1 /dT;
a fourth passive waveguide having a fourth length and the second waveguide geometry, and being characterized by dn 2 /dT; and
a second tapered transition structure of length L T directly coupling the third and fourth passive waveguides;
wherein a first confinement factor characterizing an optical mode supported by the first and third passive waveguides is larger than a second confinement factor of an optical mode supported by the second and fourth passive waveguides; and
wherein the first, second, third, and fourth lengths are selected such that a temperature sensitivity characterizing the dual-geometry waveguide structure is lower than a temperature sensitivity characterizing a single-geometry waveguide structure having the same optical path length difference value L O between first and second arms would be, in which all passive waveguides in either the first arm or the second arm are of a single-core geometry or of a dual core geometry, but not both.
2 . The device of claim 1 ,
wherein the cores of the first passive waveguide and the core of the second passive waveguide comprise at least one of SiN, SiON, TiO2, Ta2O5, Al2O3, and AlN.
3 . The device of claim 2 ,
wherein the spacer layer comprises at least one of SiO2, Al2O3 and SiON.
4 . The device of claim 3 ,
wherein top and bottom surfaces of the spacer layer of the dual-core geometry are parallel to a top plane of a substrate of the dual waveguide, the top surface underlying a first core of the two cores and the bottom surface overlying a second core of the two cores,
wherein the spacer layer has a spacer thickness, perpendicular to the top and bottom surfaces, between 5 nm and 250 nm.
5 . The device of claim 3 ,
wherein top and bottom surfaces of the spacer layer of the dual-core geometry are parallel to a top plane of a substrate of the dual waveguide, the top surface underlying a first core of the two cores and the bottom surface overlying a second core of the two cores,
wherein the spacer layer has a spacer thickness, perpendicular to the top and bottom surfaces, between 250 nm and 1000 nm.
6 . The device of claim 3 ,
wherein the core of the second passive waveguide has a single core thickness between 50 nm and 200 nm.
7 . The device of claim 3 ,
wherein each of the two cores of the first passive waveguide has a thickness between 50 nm and 650 nm.
8 . The device of claim 1 ,
wherein a first one of the two couplers receives an optical input to the dual-geometry waveguide structure;
wherein a second one of the two couplers provides an output from the dual-geometry waveguide structure; and
wherein the output of the dual-geometry waveguide structure is coupled to a photodetector comprising at least one of Ga, As, In and P.
9 . The device of claim 8 ,
wherein the photodetector supports a first optical mode differing from a second optical mode characterizing the output from the dual-geometry waveguide structure;
wherein the coupling between the photodetector and the dual-geometry waveguide structure comprises an intermediate structure supporting an intermediate optical mode;
wherein the intermediate structure is butt-coupled to the photodetector;
wherein a tapered waveguide structure in at least one of the dual-geometry waveguide structure and the intermediate structure facilitates efficient adiabatic transformation between the second optical mode and the intermediate optical mode; and
wherein no adiabatic transformation occurs between the intermediate optical mode and the first optical mode.
10 . The device of claim 9 ,
wherein the coupler structures, arm structures, intermediate structure and photodetector are integrated on a common substrate.