Light-emitting element and display device comprising same
The light emitting device includes an active layer, a plurality of first conductivity-type semiconductor layers under the active layer, and a plurality of second conductivity-type semiconductor layers on the active layer. The plurality of first conductivity-type semiconductor layers include an adsorption prevention layer spaced farthest from the active layer. The adsorption prevention layer can include Al x1 Ga (1-x1) InP, x1 can be 0.6 or less, and the thickness of the adsorption prevention layer can be 2 μm or less.
1 . A light emitting device comprising:
an active layer;
a plurality of first conductivity-type semiconductor layers under the active layer;
a plurality of second conductivity-type semiconductor layers on the active layer;
a shielding layer disposed under the plurality of first conductivity-type semiconductor layers, and
a metal layer disposed under the shielding layer,
wherein the metal layer comprises a magnetizable nickel layer,
wherein the plurality of first conductivity-type semiconductor layers comprise an adsorption prevention layer spaced farthest from the active layer,
wherein the adsorption prevention layer includes (Al x1 Ga 1-x1 ) 1-y1 In y1 P, and the x1 is 0.6 or less,
wherein a thickness of the adsorption prevention layer is 2 micrometer (μm) or less,
wherein the adsorption prevention layer is configured to prevent the light emitting device from sticking to a bottom surface of a substrate, and
wherein the shielding layer is be configured to shield aluminum (Al) electronegativity of a first conductivity-type semiconductor layer of the plurality of first conductivity-type semiconductor layers.
2 . The light emitting device according to claim 1 , wherein the x1 is greater than or equal to 0.2 and less than or equal to 0.6.
3 . The light emitting device according to claim 1 , wherein the thickness of the adsorption prevention layer is 0.5 μm or more and 1.5 μm or less.
4 . The light emitting device according to claim 1 , wherein a ratio of concentration of Al to gallium (Ga) of Ga of the adsorption prevention layer is 0.5 or more and 5 or less.
5 . The light emitting device according to claim 1 , wherein a thickness of the shielding layer is at least 300 nanometers (nm) or more.
6 . The light emitting device according to claim 1 , wherein the shielding layer comprises a semiconductor layer.
7 . The light emitting device according to claim 6 , wherein the shielding layer comprises gallium indium phosphide (GaInP).
8 . The light emitting device according to claim 6 , wherein the shielding layer is configured not to contain Al.
9 . The light emitting device according to claim 1 , wherein the shielding layer is an etch stop layer.
10 . The light emitting device according to claim 1 , wherein the plurality of first conductivity-type semiconductor layers comprise a clad layer between the active layer and the adsorption prevention layer, and
wherein the clad layer includes (Al x2 Ga 1-x2 ) 1-y2 In y2 P, and x2 is less than x1.
11 . The light emitting device according to claim 10 , wherein a ratio of the thickness of the adsorption prevention layer to a thickness of the clad layer is at least 1 or less.
12 . The light emitting device according to claim 10 , wherein the plurality of first conductivity-type semiconductor layers further comprise a contact layer disposed between the active layer and the clad layer.
13 . The light emitting device according to claim 12 , wherein the contact layer comprises aluminum indium phosphide (AlInP), and
wherein the shielding layer is disposed below the adsorption prevention layer and is in-contact with a bottom surface of the adsorption prevention layer.
14 . The light emitting device according to claim 1 , further comprising a first electrode on the plurality of first conductivity-type semiconductor layers and a second electrode on the plurality of second conductivity-type semiconductor layers, and
wherein the second electrode is located in a central region of the light emitting device, and the first electrode is configured to surround the second electrode.
15 . The light emitting device according to claim 1 , wherein the shielding layer is a third conductivity-type semiconductor layer, and
wherein the shielding layer is disposed below the adsorption prevention layer and is in-contact with a bottom surface of the adsorption prevention layer.
16 . A display device comprising:
a substrate;
a first and second wire electrodes on the substrate;
a partition layer having a plurality of assembly holes and on the first and second wire electrodes; and
a light emitting device disposed in each of the plurality of assembly holes,
wherein the light emitting device comprises
an active layer;
a plurality of first conductivity-type semiconductor layers under the active layer;
a plurality of second conductivity-type semiconductor layers on the active layer;
a shielding layer disposed under the plurality of first conductivity-type semiconductor layers; and
a metal layer disposed under the shielding layer,
wherein the metal layer comprises a magnetizable nickel layer,
wherein the plurality of first conductivity-type semiconductor layers comprise an adsorption prevention layer spaced farthest from the active layer,
wherein the adsorption prevention layer includes (Al x1 Ga 1-x1 ) 1-y1 In y1 P, and the x1 is 0.6 or less,
wherein a thickness of the adsorption prevention layer is 2 micrometer (μm) or less,
wherein the adsorption prevention layer is configured to prevent the light emitting device from sticking to a bottom surface of the substrate, and
wherein the shielding layer is be configured to shield aluminum (Al) electronegativity of a first conductivity-type semiconductor layer of the plurality of first conductivity-type semiconductor layers.
17 . The display device according to claim 16 , wherein the x1 is greater than or equal to 0.2 and less than or equal to 0.6.
18 . The display device according to claim 16 , wherein the thickness of the adsorption prevention layer is 0.5 μm or more and 1.5 μm or less.
19 . The display device according to claim 16 , wherein a ratio of concentration of Al to gallium (Ga) of the adsorption prevention layer is 0.5 or more and 5 or less.
20 . The display device according to claim 16 ,
wherein a thickness of the shielding layer is at least 300 nanometers (nm) or more.