Semiconductor devices with insulated source/drain jumper structures
A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends. An upper surface of the insulator is higher than an upper surface of the first fin pattern and an upper surface of the second fin pattern.
1 . A semiconductor device comprising:
a first fin pattern and a second fin pattern on a substrate and extending along a first direction;
an insulating structure on the substrate, the insulating structure including opposite first and second sides extending along a second direction transverse to the first direction;
a first source/drain region on the first side of the insulating structure and overlapping the first fin pattern;
a second source/drain region on the second side of the insulating structure and overlapping the second fin pattern; and
a source/drain contact connecting the first source/drain region and the second source/drain region and including a connection portion on an upper surface of the insulating structure,
wherein the upper surface of the insulating structure is higher than upper surfaces of the first fin pattern and the second fin pattern.
2 . The semiconductor device of claim 1 , wherein the source/drain contact includes a first portion and a second portion connected to the connection portion,
wherein the first portion of the source/drain contact is in direct contact with the first source/drain region, and
wherein the second portion of the source/drain contact is in direct contact with the second source/drain region.
3 . The semiconductor device of claim 1 , wherein the insulating structure includes a first insulating layer between the first fin pattern and the second fin pattern, and a second insulating layer on the first insulating layer.
4 . The semiconductor device of claim 1 , wherein the upper surface of the insulating structure is higher than an upper surface of the first source/drain region.
5 . The semiconductor device of claim 1 , further comprising insulating spacers on the first and second sides of the insulating structure.
6 . The semiconductor device of claim 5 , further comprising a gate electrode on the first side of the insulating structure and gate spacers disposed on both sides of the gate electrode,
wherein the first source/drain region is interposed between the insulating structure and the gate electrode, and
wherein the gate spacers have the same material as the insulating spacers.
7 . The semiconductor device of claim 1 , further comprising a gate electrode on the first fin pattern and on the first side of the insulating structure, a capping pattern on the gate electrode and an interlayer insulating film on the capping pattern,
wherein the capping pattern is in direct contact with the gate electrode and the interlayer insulating film, and the connection portion of the source/drain contact passes through the interlayer insulating film in the first direction.
8 . A semiconductor device comprising:
a first fin pattern and a second fin pattern on a substrate and extending lengthwise along a first direction, wherein the first fin pattern and the second fin pattern are arranged along a straight line extending in the first direction;
a first insulating layer in a trench between the first fin pattern and the second fin pattern, the first insulating layer including opposite first and second sides extending along a second direction transverse to the first direction;
a second insulating layer on the first insulating layer;
a first source/drain region on the first side of the first insulating layer and overlapping the first fin pattern;
a second source/drain region on the second side of the first insulating layer and overlapping the second fin pattern, wherein the second source/drain region is separated from the first source/drain region in the first direction; and
a source/drain contact on the second insulating layer and directly connecting the first source/drain region and the second source/drain region.
9 . The semiconductor device of claim 8 ,
wherein the source/drain contact includes a first portion, a second portion and a third portion,
wherein the first portion of the source/drain contact is in direct contact with the first source/drain region,
wherein the third portion of the source/drain contact is in direct contact with the second source/drain region, and
wherein the second portion on the second insulating layer connects the first portion and the third portion.
10 . The semiconductor device of claim 9 ,
wherein the first portion, the second portion and the third portion are made of the same material.
11 . The semiconductor device of claim 9 , further comprising a gate electrode on the first fin pattern, a capping pattern on the gate electrode, and an interlayer insulating film on the capping pattern,
wherein the second portion passes through the interlayer insulating film to connect the first portion and the third portion through.
12 . The semiconductor device of claim 11 ,
wherein the capping pattern is in direct contact with the interlayer insulating film and the gate electrode.
13 . The semiconductor device of claim 8 ,
wherein the first insulating layer directly contacts the second insulating layer, and
wherein an upper surface of the second insulating layer is higher than upper surfaces of the first fin pattern and the second fin pattern.
14 . The semiconductor device of claim 8 ,
wherein the second insulating layer has a different material than the first insulating layer.
15 . A semiconductor device comprising:
a first source/drain region on a substrate;
a second source/drain region on the substrate and spaced apart from the first source/drain region in a first direction;
an insulating structure between the first source/drain region and the second source/drain region on the substrate; and
a source/drain contact including a first portion, a second portion and a third portion, the first portion directly contacting the first source/drain region, the third portion directly contacting the second source/drain region, and the second portion being on the insulating structure and connecting the first portion and the third portion.
16 . The semiconductor device of claim 15 , further comprising a gate structure on the substrate and extending along a second direction transverse to the first direction,
wherein the first source/drain region is interposed between the insulating structure and the gate structure, and
wherein an upper surface of the gate structure is coplanar with an upper surface of the insulating structure.
17 . The semiconductor device of claim 15 , wherein an upper surface of the insulating structure is in direct contact with the second portion of the source/drain contact.
18 . The semiconductor device of claim 15 , further comprising a first fin pattern and a second fin pattern separated by the insulating structure,
wherein the first source/drain region overlaps the first fin pattern, and
wherein the second source/drain region overlaps the second fin pattern.
19 . The semiconductor device of claim 18 , wherein the insulating structure includes a first insulating layer directly contacting the first fin pattern and the second fin pattern, and a second insulating layer on the first insulating layer.
20 . The semiconductor device of claim 19 , wherein a width of the second insulating layer in the first direction is greater than a width of the first insulating layer in the first direction.