Semiconductor device
An object is to effectively take measures against erroneous measurement of distance measurement information based on a laser light source. Therefore, a semiconductor device according to the present technology includes an imaging unit including a photoelectric conversion element that receives reflected light of light emitted from a specific laser light source reflected by a subject and performs photoelectric conversion and a control unit that executes validity determination processing for determining whether or not the light received by the photoelectric conversion element is the light emitted from the specific laser light source.
1 . A semiconductor device comprising:
an imaging unit including a first photoelectric conversion element and a second photoelectric conversion element that respectively receive reflected light of light emitted from a specific laser light source reflected by a subject and perform photoelectric conversion, wherein
the first photoelectric conversion element is connected to at least four charge accumulation units to which charges accumulated in different periods in the first photoelectric conversion element are transferred, and
the second photoelectric conversion element is connected to a number of charge accumulation units less than a number of charge accumulation units connected to the first photoelectric conversion element; and
a control unit configured to execute validity determination processing and distance measurement, wherein
the first photoelectric conversion element is used for the validity determination processing for determining whether or not the light received by the first photoelectric conversion element is the light emitted from the specific laser light source, and
the second photoelectric conversion element is used for the distance measurement.
2 . The semiconductor device according to claim 1 , wherein
the first photoelectric conversion element is one of a plurality of first photoelectric conversion elements,
the second photoelectric conversion element is one of a plurality of second photoelectric conversion elements, and
a number of the second photoelectric conversion elements is more than a number of the first photoelectric conversion elements.
3 . The semiconductor device according to claim 1 , wherein
the first photoelectric conversion element is one of a plurality of first photoelectric conversion elements,
the second photoelectric conversion element is one of a plurality of second photoelectric conversion elements, and
the first photoelectric conversion elements are arranged on an outer side of a group of the second photoelectric conversion elements.
4 . The semiconductor device according to claim 1 , wherein
the first photoelectric conversion element is used for the validity determination processing and also used for distance measurement.
5 . The semiconductor device according to claim 1 , wherein
in the validity determination processing is based on a rising waveform of the laser light source.
6 . The semiconductor device according to claim 1 , wherein
in the validity determination processing, determination based on a light reception spot shape of light emitted from the laser light source is made.
7 . The semiconductor device according to claim 1 , further comprising:
an illumination unit including the specific laser light source.
8 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to irradiate laser light with a first waveform and laser light with a second waveform different from the first waveform.
9 . The semiconductor device according to claim 8 , wherein
light intensities of the first waveform and the second waveform at the time of irradiation are different from each other.
10 . The semiconductor device according to claim 8 , wherein
rising shapes of the first waveform and the second waveform are different from each other.
11 . The semiconductor device according to claim 8 , wherein
the illumination unit irradiates the first waveform and the second waveform in a random order.
12 . The semiconductor device according to claim 8 , wherein
light emission time lengths of the first waveform and the second waveform are different from each other.
13 . The semiconductor device according to claim 8 , wherein
non-light emission time lengths of the first waveform and the second waveform are different from each other.
14 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to emit spot-like laser light of which an irradiation range is equal to or less than a quarter of an imaging range of the imaging unit.
15 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to emit laser light having a mirror symmetrical or point symmetrical spot-like shape.
16 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to emit laser light having a non-mirror symmetrical or non-point symmetrical spot-like shape.
17 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to emit a dot pattern in which a plurality of spot-like laser light beams is irregularly arranged.
18 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to emit a dot pattern in which a plurality of spot-like laser light beams is regularly arranged.
19 . The semiconductor device according to claim 7 , wherein
the illumination unit is able to emit a dot pattern in which spot-like laser light beams of which the number is equal to or less than a quarter of the number of photoelectric conversion elements are arranged.
20 . The semiconductor device according to claim 7 , wherein
the illumination unit irradiates the specific laser light source so that laser light having a spot shape smaller than the imaging range of the imaging unit draws a specific trajectory within the imaging range.