IP Library › Granted Patent US 12,602,189
Granted Patent B1
US 12,602,189 · App. 18/914,485 · Granted Apr 14, 2026

Selecting superblock partitions for scanning in memory devices

Inventors: Juane Li (San Jose, CA); Frederick H. Adi (Castro Valley, CA); Ruipeng Tao (Shanghai, CN)
Assignee: Micron Technology, Inc.
G06F3/0659G06F3/0613G06F3/0679
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Quick Facts
Patent No.
US 12,602,189
App. No.
18/914,485
Granted
Apr 14, 2026
Kind
B1
Abstract

An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to: identify a block family comprising a plurality of blocks of the memory device; responsive to determining that none of superblock partitions associated with the block family covers all die families of the set of die families, identify a combination of two or more superblock partitions associated with the block family, such that a union of die families covered by the combination of the two or more superblock partitions includes all die families of the set of die families of the memory device; and perform a scan operation with respect to the combination of the two or more superblock partitions.

Claims (61)

1 . A system comprising:

a memory device; and

a processing device, operatively coupled to the memory device, the processing device to perform operations comprising:

identifying a block family comprising a plurality of blocks of the memory device;

determining whether any single superblock partition, among superblock partitions associated with the block family, exists that covers all die families of a set of die families utilized by the plurality of blocks;

responsive to determining that none of the superblock partitions associated with the block family covers all die families of the set of die families, identifying a combination of two or more superblock partitions associated with the block family, such that a union of die families covered by the combination of the two or more superblock partitions includes all die families of the set of die families utilized by the plurality of blocks; and

performing a scan operation with respect to the combination of the two or more superblock partitions.

2 . The system of claim 1 , wherein the block family comprises a plurality of blocks of the memory device that have been programmed within at least one of: a specified time window or a specified temperature window.

3 . The system of claim 1 , wherein performing the scan operation further comprises:

performing, with respect to at least a subset of blocks of the combination of the two or more superblock partitions, read operations utilizing multiple read voltage offsets; and

choosing, among the multiple the read voltage offsets, a read voltage offset that minimizes an error rate of the read operations.

4 . The system of claim 1 , wherein identifying the combination of two or more superblock partitions further comprises:

identifying, based on block family metadata, a plurality of superblock partitions associated with the identified block family;

iterating over a plurality of combinations of superblock partitions of the plurality of superblock partitions.

5 . The system of claim 4 , wherein the block family metadata comprises a first table including a plurality of records, wherein a record of the plurality of records associates at least a subset of pages of a superblock with the block family.

6 . The system of claim 4 , wherein the block family metadata comprises a second table including a plurality of records, wherein a record of the plurality of records associates each die family of the set of die families with a respective voltage offset bin.

7 . The system of claim 4 , wherein the block family metadata comprises a third table including a plurality of records, wherein a record of the plurality of records associates a voltage offset bin with one or more read voltage offsets to be applied to respective base voltage read levels for performing read operations.

8 . The system of claim 1 , further comprising:

responsive to determining that each superblock partition of a subset of superblock partitions associated with the block family covers all die families of the set of die families;

selecting at least one superblock partition of the subset of superblock partitions; and

performing a scan operation with respect to the at least one superblock partition of the subset of superblock partitions.

9 . A method, comprising:

identifying, by a processing device, a block family comprising a plurality of blocks of a memory device;

determining whether any single superblock partition, among superblock partitions associated with the block family, exists that covers all die families of a set of die families utilized by the plurality of blocks;

responsive to determining that none of the superblock partitions associated with the block family covers all die families of the set of die families, identifying a combination of two or more superblock partitions associated with the block family, such that a union of die families covered by the combination of the two or more superblock partitions includes all die families of the set of die families utilized by the plurality of blocks; and

performing a scan operation with respect to the combination of the two or more superblock partitions.

10 . The method of claim 9 , wherein the block family comprises a plurality of blocks of the memory device that have been programmed within at least one of: a specified time window or a specified temperature window.

11 . The method of claim 9 , wherein performing the scan operation further comprises:

performing, with respect to at least a subset of blocks of the combination of the two or more superblock partitions, read operations utilizing multiple read voltage offsets; and

choosing, among the multiple the read voltage offsets, a read voltage offset that minimizes an error rate of the read operations.

12 . The method of claim 9 , wherein identifying the combination of two or more superblock partitions further comprises:

identifying, based on block family metadata, a plurality of superblock partitions associated with the identified block family;

iterating over a plurality of combinations of superblock partitions of the plurality of superblock partitions.

13 . The method of claim 12 , wherein the block family metadata comprises at least one of: a first table including a first plurality of records, a second table including a second plurality of records, or a third table including a third plurality of records;

wherein a first record of the first plurality of records associates at least a subset of pages of a superblock with the block family;

wherein a second record of the second plurality of records associates each die family of the set of die families with a respective voltage offset bin; and

wherein a third record of the third plurality of records associates a voltage offset bin with one or more read voltage offsets to be applied to respective base voltage read levels for performing read operations.

14 . The method of claim 9 , further comprising:

responsive to determining that each superblock partition of a subset of superblock partitions associated with the block family covers all die families of the set of die families:

selecting at least one superblock partition of the subset of superblock partitions; and

performing a scan operation with respect to the at least one superblock partition of the subset of superblock partitions.

15 . A computer-readable non-transitory storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to perform operations, comprising:

identifying a block family comprising a plurality of blocks of a memory device;

determining whether any single superblock partition, among superblock partitions associated with the block family, exists that covers all die families of a set of die families utilized by the plurality of blocks;

responsive to determining that none of the superblock partitions associated with the block family covers all die families of the set of die families, identifying a combination of two or more superblock partitions associated with the block family, such that a union of die families covered by the combination of the two or more superblock partitions includes all die families of the set of die families utilized by the plurality of blocks; and

performing a scan operation with respect to the combination of the two or more superblock partitions.

16 . The computer-readable non-transitory storage medium of claim 15 , wherein the block family comprises a plurality of blocks of the memory device that have been programmed within at least one of: a specified time window or a specified temperature window.

17 . The computer-readable non-transitory storage medium of claim 15 , wherein performing the scan operation further comprises:

performing, with respect to at least a subset of blocks of the combination of the two or more superblock partitions, read operations utilizing multiple read voltage offsets; and

choosing, among the multiple the read voltage offsets, a read voltage offset that minimizes an error rate of the read operations.

18 . The computer-readable non-transitory storage medium of claim 15 , wherein identifying the combination of two or more superblock partitions further comprises:

identifying, based on block family metadata, a plurality of superblock partitions associated with the identified block family;

iterating over a plurality of combinations of superblock partitions of the plurality of superblock partitions.

19 . The computer-readable non-transitory storage medium of claim 18 , wherein the block family metadata comprises at least one of: a first table including a first plurality of records, a second table including a second plurality of records, or a third table including a third plurality of records;

wherein a first record of the first plurality of records associates at least a subset of pages of a superblock with the block family;

wherein a second record of the second plurality of records associates each die family of the set of die families with a respective voltage offset bin; and

wherein a third record of the third plurality of records associates a voltage offset bin with one or more read voltage offsets to be applied to respective base voltage read levels for performing read operations.

20 . The computer-readable non-transitory storage medium of claim 15 , further comprising:

responsive to determining that each superblock partition of a subset of superblock partitions associated with the block family covers all die families of the set of die families;

selecting at least one superblock partition of the subset of superblock partitions; and

performing a scan operation with respect to the at least one superblock partition of the subset of superblock partitions.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 14, 2024
From: LI, JUANE; ADI, FREDERICK H.; TAO, RUIPENG
To: MICRON TECHNOLOGY, INC.
Reel/Frame 068888/0060 →
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