Method of manufacturing vertical-cavity surface-emitting laser element
A method of manufacturing a vertical-cavity surface-emitting laser element includes: providing a nitride semiconductor layer including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer in this order; covering at least a first portion of a surface of the p-side semiconductor layer with a mask member while a second portion of the surface of the p-side semiconductor layer is not covered with the mask member; forming an oxide film on the second portion of the surface of the p-side semiconductor layer and the mask member; heat-treating the nitride semiconductor layer and the oxide film; removing the oxide film and the mask member after the heat-treating of the nitride semiconductor layer and the oxide film; and forming an electrode extending over the first portion and the second portion of the surface of the p-side semiconductor layer.
1 . A method of manufacturing a vertical-cavity surface-emitting laser element, comprising:
providing a nitride semiconductor layer including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer in this order;
covering at least a first portion of a surface of the p-side semiconductor layer with a mask member while a second portion of the surface of the p-side semiconductor layer is not covered with the mask member;
forming an oxide film on the second portion of the surface of the p-side semiconductor layer and the mask member;
heat-treating the nitride semiconductor layer and the oxide film;
removing the oxide film and the mask member after the heat-treating of the nitride semiconductor layer and the oxide film; and
forming an electrode extending over the first portion and the second portion of the surface of the p-side semiconductor layer.
2 . The method according to claim 1 , wherein
the oxide film includes an oxide including at least one of silicon and zinc.
3 . The method according to claim 1 , wherein
the heat-treating of the nitride semiconductor layer and the oxide film is performed at 500° C. or higher and 800° C. or lower.
4 . The method according to claim 2 , wherein
the heat-treating of the nitride semiconductor layer and the oxide film is performed at 500° C. or higher and 800° C. or lower.
5 . The method according to claim 1 , wherein
the forming of the oxide film includes forming the oxide film by sputtering.
6 . The method according to claim 4 , wherein
the forming of the oxide film includes forming the oxide film by sputtering.
7 . The method according to claim 1 , wherein
the removing of the oxide film includes bringing the oxide film into contact with a removal-treatment liquid.
8 . The method according to claim 6 , wherein
the removing of the oxide film includes bringing the oxide film into contact with a removal-treatment liquid.
9 . The method according to claim 7 , wherein
the removing of the mask member includes removing the mask member when the oxide film is removed by bringing the oxide film into contact with the removal-treatment liquid.
10 . The method according to claim 8 , wherein
the removing of the mask member includes removing the mask member when the oxide film is removed by bringing the oxide film into contact with the removal-treatment liquid.
11 . The method according to claim 1 , further comprising
performing a reactive ion etching with an oxygen-containing gas on an entire surface of the p-side semiconductor layer after the forming of the mask member and before the forming of the oxide film.
12 . The method according to claim 10 , further comprising
performing a reactive ion etching with an oxygen-containing gas on an entire surface of the p-side semiconductor layer after the forming of the mask member and before the forming of the oxide film.
13 . A method of manufacturing a vertical-cavity surface-emitting laser element, comprising:
providing a nitride semiconductor layer including a first reflective layer, an n-side semiconductor layer, an active layer, and a p-side semiconductor layer in this order;
covering at least a first portion of a surface of the p-side semiconductor layer with a mask member while a second portion of the surface of the p-side semiconductor layer is not covered with the mask member;
forming an oxide film on the second portion of the surface of the p-side semiconductor layer and the mask member;
heat-treating the nitride semiconductor layer and the oxide film;
removing the oxide film and the mask member after the heat-treating of the nitride semiconductor layer and the oxide film;
forming an electrode extending over the first portion and the second portion of the surface of the p-side semiconductor layer; and
forming a second reflective layer over the surface of the p-side semiconductor layer including the electrode.
14 . The method according to claim 13 , wherein
the oxide film includes an oxide containing at least one of silicon and zinc.