Semiconductor device
Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film.
1 . A semiconductor device comprising:
a substrate;
a lower electrode on the substrate;
a first lower interfacial film on the lower electrode and in contact with the lower electrode;
a dielectric film on the first lower interfacial film;
a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film;
a first upper interfacial film on the dielectric film;
a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film; and
an upper electrode on the first upper interfacial film,
wherein the first upper interfacial film is in contact with the upper electrode,
wherein the first lower interfacial film is a conductive single film, the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include a same first metal element,
wherein an electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than an electronegativity of a second metal element included in the dielectric film, and
wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element.
2 . The device of claim 1 , wherein the first lower interfacial film and the first upper interfacial film are a same material.
3 . The device of claim 1 , wherein a difference between the electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film and the electronegativity of the second metal element included in the dielectric film is greater than 0.05.
4 . The device of claim 1 , wherein the lower electrode and the upper electrode include a same conductive material.
5 . The device of claim 1 , wherein the lower electrode extends in an elongated manner in a thickness direction of the substrate.
6 . The device of claim 1 , wherein the lower electrode includes a first extension extending along a top face of the substrate, and a second extension protruding from one end of the first extension and extending in a thickness direction of the substrate.
7 . The device of claim 1 , wherein each of the first lower interfacial film and the first upper interfacial film includes a nitride of the same first metal element.
8 . The device of claim 1 , wherein the dielectric film includes at least one of aluminum oxide, zirconium oxide or hafnium oxide.
9 . The device of claim 1 , wherein the same first metal element included in each of the first lower interfacial film and the first upper interfacial film includes one of niobium (Nb), tantalum (Ta), tin (Sn), zirconium (Zr) and titanium (Ti).
10 . A semiconductor device comprising:
a substrate;
a lower electrode on the substrate;
a first lower interfacial film on the lower electrode and in contact with the lower electrode and including a nitride of a first metal element;
a dielectric film on the first lower interfacial film;
a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film;
a first upper interfacial film on the dielectric film and including the nitride of the first metal element;
an upper electrode on the first upper interfacial film; and
a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film,
wherein the first upper interfacial film is in contact with the upper electrode,
wherein an electronegativity of the first metal element is greater than an electronegativity of a second metal element included in the dielectric film, and
wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element.
11 . The device of claim 10 ,
wherein the first metal element and the third metal element are different from each other, and
an electronegativity of the third metal element is greater than the electronegativity of the second metal element included in the dielectric film.
12 . The device of claim 10 , wherein
the dielectric film includes at least one of hafnium (Hf) and zirconium (Zr), and
the first metal element of each of the first lower interfacial film and the first upper interfacial film includes at least one of tin (Sn), niobium (Nb) and tantalum (Ta).
13 . The device of claim 10 , wherein each of the first lower interfacial film and the first upper interfacial film is a single film.
14 . A semiconductor device comprising:
a substrate;
the substrate defining a trench;
a gate electrode filling a portion of the trench;
a buried contact on at least one side of the gate electrode and connected to the substrate;
a landing pad on the buried contact; and
a capacitor connected to the landing pad,
wherein the capacitor includes,
a lower electrode on the substrate,
a first lower interfacial film on the lower electrode and in contact with the lower electrode,
a dielectric film on the lower interfacial film,
a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film,
a first upper interfacial film on the dielectric film,
a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film, and
an upper electrode on the first upper interfacial film,
wherein the first upper interfacial film is in contact with the upper electrode,
wherein the upper and lower electrodes include a same conductive material,
wherein the first lower interfacial film is a single film and the first upper interfacial film is a single film, and the first lower interfacial film and the first upper interfacial film include a same first metal element,
wherein an electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than an electronegativity of a second metal element included in the dielectric film, and
wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element.
15 . The device of claim 14 , further comprising:
a supporter surrounding a sidewall of the lower electrode and contacting the first lower interfacial film.
16 . The device of claim 15 , wherein a top face of the lower electrode and a top face of the supporter are coplanar with each other.
17 . The device of claim 15 , wherein the supporter includes a plurality of supporter patterns spaced apart from each other in a direction perpendicular to a top face of the substrate.
18 . The device of claim 14 , wherein a difference between the electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film and the electronegativity of the second metal element included in the dielectric film is greater than 0.05.