Halogen-free molybdenum-containing precursors for deposition of molybdenum

1 . A molybdenum complex comprising Compound I:

wherein R is methyl or ethyl, R′ is methyl or ethyl, R″ is hydrogen, methyl, ethyl, or propyl, and n equals 1 or 2.

2 . The molybdenum complex of claim 1 , wherein R is methyl, R′ is methyl, R″ is hydrogen, and n equals 1.

3 . The molybdenum complex of claim 1 , wherein R is methyl, R′ is methyl, R″ is hydrogen, and n equals 2.

4 . The molybdenum complex of claim 1 , wherein the molybdenum complex has a vapor pressure at 100° C. of 0.1 Torr to 1 Torr.

5 . A method of depositing a film, the method comprising:

i) providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber, and wherein the molybdenum-containing precursor comprises a molybdenum complex according to Compound I:

wherein R is methyl or ethyl, R′ is methyl or ethyl, R″ is methyl, ethyl, or propyl, and n=1 or 2; and

ii) contacting the substrate with the molybdenum-containing precursor, wherein the contacting deposits a molybdenum-containing material on the substrate.

6 . The method of claim 5 , wherein the molybdenum-containing precursor is halogen-free.

7 . The method of claim 5 , wherein the molybdenum-containing material comprises molybdenum metal, molybdenum oxide, molybdenum nitride, molybdenum carbide, molybdenum silicide, or molybdenum sulfide.

8 . The method of claim 5 , further comprising:

repeating operations i and ii iteratively to build the molybdenum-containing material to a thickness of 1 Å to 3000 Å.

9 . The method of claim 5 , further comprising:

iii) providing a reactant to the processing region of the semiconductor processing chamber to react with the molybdenum-containing precursor to form the molybdenum-containing material.

10 . The method of claim 9 , wherein operations i and ii are performed simultaneously.

11 . The method of claim 9 , wherein operations i and ii are performed sequentially.

12 . The method of claim 9 , wherein the reactant comprises an oxidant.

13 . The method of claim 5 , further comprising:

iii) providing a reactant to the processing region of the semiconductor processing chamber; and

iv) forming plasma effluents of the reactant to react with the molybdenum-containing precursor to form the molybdenum-containing material.

14 . The method of claim 5 , further comprising:

iii) annealing the molybdenum-containing material.

15 . The method of claim 5 , wherein the molybdenum-containing material extends into one or more features defined by the substrate.

16 . A method of forming a molybdenum complex, the method comprising:

reacting Y—O—CH(R″)—(CH 2 ) n —NR(R′) where Y is an alkali metal and MoO 2 X 2 where X is a halogen in a dry, organic solvent to produce the molybdenum complex according to Compound I:

wherein R is methyl or ethyl, R′ is methyl or ethyl, R″ is methyl, ethyl, or propyl, and n=1 or 2.

17 . The method of claim 16 , wherein conditions of the reacting include a reaction temperature of 0° C. to 50° C. and a reaction time of 1 hour to 36 hours.

18 . The method of claim 16 , further comprising:

adding the Y—O—CH(R″)—(CH 2 ) n —NR(R′) over time to the MoO 2 Cl 2 .

19 . The method of claim 18 , wherein the time is 5 minutes to 2 hours.

20 . The method of claim 16 , further comprising:

filtering a product of the reacting; and

washing and drying the product to produce crystals comprising the molybdenum complex.