Semiconductor structure and method for forming same
A semiconductor structure includes a substrate and a plurality of word lines located on a top surface of the substrate. Each of the word lines extends in a direction perpendicular to the top surface of the substrate. The plurality of word lines are arranged at intervals along a first direction. Any two adjacent ones of the word lines are arranged in an at least partially staggered manner along the first direction. The first direction is a direction parallel to the top surface of the substrate.
1 . A semiconductor structure comprising:
a substrate;
a plurality of word lines located on a top surface of the substrate, wherein each of the word lines extends in a direction perpendicular to the top surface of the substrate, the plurality of word lines are arranged at intervals along a first direction, any two adjacent ones of the word lines are arranged in an at least partially staggered manner along the first direction, and the first direction is a direction parallel to the top surface of the substrate; and
a plurality of semiconductor layers located above the top surface of the substrate, wherein each of the semiconductor layers comprises a plurality of active pillars arranged at intervals along the first direction, and the plurality of semiconductor layers are arranged at intervals in the direction perpendicular to the top surface of the substrate, each of the active pillars comprises a channel region, as wells as a drain region and a source region distributed at opposite sides of the channel region in a second direction, each of the word lines continuously covers a plurality of channel regions arranged at intervals in the direction perpendicular to the top surface of the substrate, the second direction is parallel to the top surface of the substrate, and the first direction is orthogonal to the second direction.
2 . The semiconductor structure of claim 1 , wherein any two adjacent ones of the word lines are arranged in a completely staggered manner along the first direction.
3 . The semiconductor structure of claim 2 , wherein projections of any two adjacent ones of the word lines partially overlap on a plane formed jointly by the first direction and the direction perpendicular to the top surface of the substrate.
4 . The semiconductor structure of claim 1 , wherein in the first direction, the plurality of word lines are sequentially ordered, projections of any two adjacent ones of odd-numbered word lines overlap on a plane formed jointly by a second direction and the direction perpendicular to the top surface of the substrate, projections of any two adjacent ones of even-numbered word lines overlap on the plane formed jointly by the second direction and the direction perpendicular to the top surface of the substrate, the second direction is parallel to the top surface of the substrate, and the first direction is orthogonal to the second direction.
5 . The semiconductor structure of claim 1 , wherein in the first direction, the plurality of word lines are sequentially ordered, projections of any two adjacent ones of 3n-th word lines overlap on a plane formed jointly by a second direction and the direction perpendicular to the top surface of the substrate, projections of any two adjacent ones of (3n+1)-th word lines overlap on the plane formed jointly by the second direction and the direction perpendicular to the top surface of the substrate, projections of any two adjacent ones of (3n+2)-th word lines overlap on the plane formed jointly by the second direction and the direction perpendicular to the top surface of the substrate, and wherein n is an integer, and the second direction is parallel to the top surface of the substrate, and the first direction is orthogonal to the second direction.
6 . The semiconductor structure of claim 1 , further comprising:
a plurality of bit lines located above the top surface of the substrate, wherein each of the bit lines extends along the first direction, and the plurality of bit lines arranged at intervals along the direction perpendicular to the top surface of the substrate; and
a plurality of bit line leads located above the top surface of the substrate, wherein each of the bit line leads extends in the direction perpendicular to the top surface of the substrate, and the plurality of bit line leads are electrically connected with the plurality of bit lines, respectively.
7 . The semiconductor structure of claim 6 , wherein each of the bit lines comprises a first end and a second end opposite to the first end along the first direction, and for any two adjacent ones of the bit lines, the first end of one bit line closer to the substrate protrudes from the first end of an other bit line along the first direction; and
wherein the plurality of bit line leads are electrically connected with first ends of the plurality of bit lines, respectively.
8 . The semiconductor structure of claim 6 , wherein each of the bit lines comprises a first end and a second end opposite to the first end along the first direction; and
wherein for any two adjacent ones of the bit lines in the direction perpendicular to the top surface of the substrate, a bit line lead electrically connected to one of the bit lines is located at the first end of the one of the bit lines, and the bit line lead electrically connected to an other bit line is located at the second end of the other bit line.
9 . The semiconductor structure of claim 8 , wherein the plurality of bit lines are sequentially ordered along the direction perpendicular to the top surface of the substrate, the bit line leads electrically connected with odd-numbered bit lines are all located at the first ends of odd-numbered bit lines, and the bit line leads electrically connected with even-numbered bit lines are all located at the second ends of the even-numbered bit lines.
10 . The semiconductor structure of claim 9 , wherein each of the bit lines comprises a first end face and a second end face opposite to the first end face along the first direction; and
wherein first end faces of the bit lines arranged at intervals in the direction perpendicular to the top face of the substrate are flush, and second end faces of the bit lines are flush.
11 . The semiconductor structure of claim 9 , wherein the plurality of bit lines are sequentially ordered along the direction perpendicular to the top surface of the substrate, and for any two adjacent ones of the odd-numbered bit lines, the first end of one bit line closer to the substrate protrudes from the first end of an other bit line along the first direction; and
wherein for any two adjacent ones of the even-numbered bit lines, the second end of one bit line closer to the substrate protrudes from the second end of an other bit line along the first direction.
12 . The semiconductor structure of claim 6 , wherein each of the bit lines comprises a third end and a fourth end opposite to the third end along the second direction, and for any two adjacent ones of the bit lines, the third end of one bit line closer to the substrate protrudes from the third end of an other bit line along the second direction; and
wherein the plurality of bit line leads are electrically connected with the third ends of the plurality of bit lines, respectively.
13 . The semiconductor structure of claim 6 , wherein widths of any two adjacent ones of the word lines are equal along the second direction.
14 . The semiconductor structure of claim 6 , wherein each of the word lines comprises a fifth end and a sixth end opposite to the fifth end along the second direction, and the semiconductor structure further comprises:
a plurality of word line leads located above the top surface of the substrate, wherein each of the word line leads extends in the direction perpendicular to the top surface of the substrate, and the plurality of word line leads are electrically connected with the plurality of word lines, respectively,
wherein for any two adjacent ones of the word lines along the first direction, a word line lead electrically connected with one of the word lines is located at the fifth end of the one of the word lines, and the word line lead electrically connected with an other word line is located at the sixth end of the other word line.