Acoustic wave device
An acoustic wave device according to the present invention includes a piezoelectric substrate including a piezoelectric layer, a functional electrode provided on the piezoelectric layer, a first support layer provided on the piezoelectric substrate so as to surround the functional electrode, a covering portion provided on or above the first support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface, a silicon oxide layer provided on the first main surface side of the covering portion, and an inductor provided on the silicon oxide layer and made of a wire. The covering portion is made of silicon. The acoustic wave device further includes one of an amorphous silicon layer and a polysilicon layer provided between the covering portion and the silicon oxide layer.
1 . An acoustic wave device comprising:
a piezoelectric substrate including a piezoelectric layer;
a functional electrode provided on the piezoelectric layer;
a support layer provided on the piezoelectric substrate so as to surround the functional electrode;
a covering portion provided on or above the support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface;
an inorganic oxide layer provided on the first main surface side of the covering portion; and
an inductor provided on the inorganic oxide layer and made of a wire; wherein
the covering portion is made of silicon; and
the acoustic wave device further includes one of an amorphous silicon layer and a polysilicon layer provided between the covering portion and the inorganic oxide layer.
2 . The acoustic wave device according to claim 1 , wherein the inorganic oxide layer is a silicon oxide layer.
3 . The acoustic wave device according to claim 1 , wherein the functional electrode is an interdigital transducer electrode.
4 . The acoustic wave device according to claim 1 , wherein
the piezoelectric substrate includes a support portion including a support substrate, and the piezoelectric layer is provided on the support portion;
a hollow portion is provided in the support portion;
the piezoelectric layer includes a third main surface and a fourth main surface;
the functional electrode includes a first electrode provided on the third main surface of the piezoelectric layer and a second electrode provided on the fourth main surface of the piezoelectric layer;
an excitation region where the first electrode and the second electrode are opposite to each other across the piezoelectric layer is provided; and
the excitation region and the hollow portion overlap each other in a plan view.
5 . The acoustic wave device according to claim 4 , wherein an intermediate layer is provided between the piezoelectric substrate and the support portion.
6 . The acoustic wave device according to claim 4 , wherein the support layer has a frame shape and includes a cavity portion; and the covering portion is located above the support layer to cover the cavity portion.
7 . The acoustic wave device according to claim 4 , further comprising a pair of reflectors provided on the third main surface of the piezoelectric layer.
8 . The acoustic wave device according to claim 1 , wherein the covering portion includes a plurality of through holes which permit through electrodes to pass through the covering portion.
9 . The acoustic wave device according to claim 8 , wherein electrode pads are connected to the through electrodes which pass through the covering portion.
10 . The acoustic wave device according to claim 1 , wherein the functional electrode is an interdigital transducer electrode which includes a first busbar, a second busbar, plural first electrode fingers, and plural second electrode fingers with the first busbar and the second busbar opposing each other.
11 . An acoustic wave device comprising:
a piezoelectric substrate including a piezoelectric layer;
a functional electrode provided on the piezoelectric layer;
a support layer provided on the piezoelectric substrate so as to surround the functional electrode;
a covering portion provided on or above the support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface;
an inorganic oxide layer provided on the first main surface side of the covering portion; and
an inductor provided on the inorganic oxide layer and made of a wire; wherein
the covering portion is made of silicon; and
the acoustic wave device further includes a silicon nitride layer provided between the covering portion and the inorganic oxide layer.
12 . The acoustic wave device according to claim 11 , wherein the inorganic oxide layer is a silicon oxide layer.
13 . The acoustic wave device according to claim 11 , wherein the functional electrode is an interdigital transducer electrode.
14 . The acoustic wave device according to claim 11 , wherein
the piezoelectric substrate includes a support portion including a support substrate, and the piezoelectric layer is provided on the support portion;
a hollow portion is provided in the support portion;
the piezoelectric layer includes a third main surface and a fourth main surface;
the functional electrode includes a first electrode provided on the third main surface of the piezoelectric layer and a second electrode provided on the fourth main surface of the piezoelectric layer;
an excitation region where the first electrode and the second electrode are opposite to each other across the piezoelectric layer is provided; and
the excitation region and the hollow portion overlap each other in a plan view.
15 . The acoustic wave device according to claim 14 , wherein
an intermediate layer is provided between the piezoelectric substrate and the support portion.
16 . The acoustic wave device according to claim 14 , wherein the support layer has a frame shape and includes a cavity portion; and the covering portion is located above the support layer to cover the cavity portion.
17 . The acoustic wave device according to claim 11 , wherein the covering portion includes a plurality of through holes which permit through electrodes to pass through the covering portion.
18 . The acoustic wave device according to claim 17 , wherein electrode pads are connected to the through electrodes which pass through the covering portion.
19 . The acoustic wave device according to claim 18 , further comprising a pair of reflectors provided on the third main surface of the piezoelectric layer.
20 . The acoustic wave device according to claim 11 , wherein the functional electrode is an interdigital transducer electrode which includes a first busbar, a second busbar, plural first electrode fingers, and plural second electrode fingers with the first busbar and the second busbar opposing each other.