IP Library Granted Patent US 12,610,683
Granted Patent B2
US 12,610,683 · App. 18/257,629 · Granted Apr 21, 2026

Display device, method for manufacturing display device, and electronic device

Inventors: Shunpei Yamazaki (Tokyo, JP); Takayuki Ikeda (Atsugi, JP); Ryota Hodo (Atsugi, JP); Yuichi Yanagisawa (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/11H10K59/1201H10K59/1213H10K59/878H10K59/131H10K59/80518H10K59/879H10K2102/3026
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Quick Facts
Patent No.
US 12,610,683
App. No.
18/257,629
Granted
Apr 21, 2026
Kind
B2
Abstract

A display device capable of displaying high-quality images can be provided. A display device includes a first light-emitting element, a second light-emitting element, a first protective layer, a second protective layer, and a gap. The first light-emitting element includes a first lower electrode, a first EL layer over the first lower electrode, a first upper electrode over the first EL layer, and the second light-emitting element includes a second lower electrode, a second EL layer over the second lower electrode, and a second upper electrode over the second EL layer. The first light-emitting element and the second light-emitting element are adjacent to each other. The first protective layer is provided over the first light-emitting element and the second light-emitting element and includes a region in contact with the side surface of the first EL layer and the side surface of the second EL layer. The second protective layer is provided over the first protective layer. The gap is provided between the first EL layer and the second EL layer and is provided between the first protective layer and the second protective layer.

Claims (28)

1 . A display device comprising a first light-emitting element, a second light-emitting element, a first protective layer, a second protective layer and a gap,

wherein the first light-emitting element comprises a first lower electrode, a first EL layer over the first lower electrode, and a first upper electrode over the first EL layer,

wherein the second light-emitting element comprises a second lower electrode, a second EL layer over the second lower electrode, and a second upper electrode over the second EL layer,

wherein the first light-emitting element is adjacent to the second light-emitting element,

wherein the first protective layer is positioned over the first light-emitting element and the second light-emitting element,

wherein the first protective layer includes regions that are in contact with a side surface of the first EL layer and a side surface of the second EL layer,

wherein the second protective layer is positioned over the first protective layer, and

wherein the gap is positioned between the first EL layer and the second EL layer and between the first protective layer and the second protective layer.

2 . The display device according to claim 1 , comprising a region where a distance between the side surface of the first EL layer and the side surface of the second EL layer is less than or equal to 1 μm.

3 . The display device according to claim 1 , wherein the gap includes one or more of nitrogen, oxygen, carbon dioxide and a gas of a Group 18 element.

4 . The display device according to claim 3 , wherein the gas of the Group 18 element includes one or more of helium, neon, argon, xenon and krypton.

5 . The display device according to claim 1 , wherein a refractive index of the first protective layer is higher than a refractive index of the gap.

6 . The display device according to claim 1 , further comprising a microlens array,

wherein the microlens array is positioned over the second protective layer.

7 . The display device according to claim 1 , wherein the first EL layer and the second EL layer are configured to emit light of different colors.

8 . The display device according to claim 1 , further comprising:

a first transistor and a second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to the first lower electrode,

wherein one of a source and a drain of the second transistor is electrically connected to the second lower electrode, and

wherein each of the first transistor and the second transistor includes silicon in a channel formation region.

9 . The display device according to claim 1 , further comprising:

a first transistor and a second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to the first lower electrode,

wherein one of a source and a drain of the second transistor is electrically connected to the second lower electrode, and

wherein each of the first transistor and the second transistor includes a metal oxide in a channel formation region.

10 . An electronic device comprising:

the display device according to claim 1 ; and

a lens.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2023
From: YAMAZAKI, SHUNPEI; IKEDA, TAKAYUKI; HODO, RYOTA; YANAGISAWA, YUICHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 064603/0658 →
Priority Claims (3)
JP 2020-210405 · Dec 18, 2020 · national
JP 2020-214449 · Dec 24, 2020 · national
JP 2020-219838 · Dec 29, 2020 · national
Continuity (1)
Related Publication 20240107861A1 · Mar 28, 2024
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