Semiconductor packaging structure
A semiconductor packaging structure includes an encapsulation layer, a die, a first metal layer, a second metal layer and an electrical connection component. The die is disposed in the encapsulation layer. The first metal layer and the second metal layer are disposed in the encapsulation layer. The first metal layer and the second metal layer are disposed on opposite sides of the die, respectively. The electrical connection component is disposed in the encapsulation layer. The first metal layer is electrically connected with the second metal layer through the electrical connection component. The electrical connection component includes a non-metal core and a metal film located on a surface of the non-metal core.
1 . A semiconductor packaging structure, comprising:
an encapsulation layer;
a die disposed in the encapsulation layer;
a first metal layer and a second metal layer disposed in the encapsulation layer, wherein the first metal layer and the second metal layer are disposed on opposite sides of the die, respectively; and
an electrical connection component disposed in the encapsulation layer, wherein the first metal layer is electrically connected with the second metal layer through the electrical connection component;
wherein, the electrical connection component comprises a non-metal core and a metal film located on a surface of the non-metal core.
2 . The semiconductor packaging structure according to claim 1 , wherein the non-metal core is non-conductive.
3 . The semiconductor packaging structure according to claim 1 , wherein the non-metal core is made of undoped silicon, silicon nitride, silicon oxide or molding compound resin.
4 . The semiconductor packaging structure according to claim 1 , wherein the metal film is made of same material as the first metal layer and the second metal layer.
5 . The semiconductor packaging structure according to claim 1 , wherein a lateral surface of the electrical connection component is flat.
6 . The semiconductor packaging structure according to claim 1 , wherein a lateral surface of the non-metal core is flat.
7 . The semiconductor packaging structure according to claim 1 , wherein the first metal layer and the second metal layer are electrically connected with the metal film of the electrical connection component.
8 . The semiconductor packaging structure according to claim 1 , wherein the die and the electrical connection component are located at same layer.
9 . The semiconductor packaging structure according to claim 1 , wherein the encapsulation layer exposes at least one of the first metal layer and the second metal layer.
10 . The semiconductor packaging structure according to claim 1 , wherein the encapsulation layer exposes the second metal layer, the second metal layer comprises two metal pads spaced apart from each other, and the two metal pads are connected with the die and the metal film of the electrical connection component, respectively.