Anode material, electrochemical device and electronic device including the same
An anode material includes silicon-based particles, the silicon-based particles include a silicon-containing substrate; at least a part of the surface of the silicon-containing substrate has an M y SiO z layer; M includes Li, Mg, Ca, Sr, Ba, Al, Ti, Zn, or any combination thereof; and 0<y<3, and 0.5<z<6. The anode material has relatively high first Coulombic efficiency and good cycle performance.
1 . An anode material, comprising silicon-based particles, wherein
the silicon-based particles comprise a silicon-containing substrate;
at least a part of a surface of the silicon-containing substrate is coated with a coating layer;
wherein the coating layer comprises SrSiO 3 .
2 . The anode material according to claim 1 , wherein a thickness of the coating layer is 50 to 150 nm.
3 . The anode material according to claim 1 , wherein at least a part of a surface of the coating layer is coated with a carbon layer; a thickness of the carbon layer is 1 to 500 nm; and a weight percentage of the carbon layer is 0.1 wt % to 10 wt % based on a total weight of the silicon-based particles.
4 . The anode material according to claim 3 , wherein the thickness of the carbon layer is 100 to 400 nm.
5 . The anode material according to claim 3 , wherein the weight percentage of the carbon layer is 0.5 wt % to 8 wt % based on the total weight of the silicon-based particles.
6 . The anode material according to claim 1 , wherein the silicon-containing substrate comprises micro Si, nano Si, or a combination thereof.
7 . A method for preparing the anode material of claim 1 , wherein the method comprises:
(1) performing thermal oxidization treatment on the surface of the silicon-containing substrate to obtain a silicon material with silicon dioxide on the surface; and
(2) mixing the silicon material with silicon dioxide on the surface and an M source, and heat-treating the mixed material at 400 to 1600° C. for 1 to 5 hr to obtain the anode material, wherein the M source comprises.
8 . An anode, comprising an anode material, the anode material comprises silicon-based particles, wherein
the silicon-based particles comprise a silicon-containing substrate;
at least a part of a surface of the silicon-containing substrate is coated with a coating layer;
wherein the coating layer comprises SrSiO 3 .
9 . The anode according to claim 8 , wherein at least a part of a surface of the coating layer is coated with a carbon layer; a thickness of the carbon layer is 1 to 500 nm; and a weight percentage of the carbon layer is 0.1 wt % to 10 wt % based on a total weight of the silicon-based particles.
10 . The anode according to claim 8 , wherein the silicon-containing substrate comprises micro Si, nano Si, or a combination thereof.
11 . An electrochemical device, wherein the electrochemical device comprises the anode according to claim 10 .
12 . An electronic device, wherein the electronic device comprises the electrochemical device according to claim 11 .
13 . The anode material according to claim 1 , wherein the coating layer further comprises at least one compound represented by formula M y SiO z ; M comprises Li, Mg, Ca, Ba, Al, Ti, Zn, or any combination thereof; and 0<y<3, and 0.5<z<6.
14 . The anode material according to claim 13 , wherein M further comprises Li; and a weight percentage of the element Li is greater than 0 wt % and less than or equal to 5 wt % based on a total weight of the silicon-based particles.
15 . The anode material according to claim 14 , wherein the weight percentage of the element Li is 1 wt % to 4 wt % based on the total weight of the silicon-based particles.
16 . The anode material according to claim 13 , wherein the M y SiO z compound comprises Li 2 SiO 3 , Li 2 Si 2 O 5 , Mg 2 SiO 4 , MgSiO 3 , CaSiO 3 , BaSiO 3 , Al 2 SiO 5 , TiSiO 4 , Zn 2 SiO 4 , or any combination thereof; and a thickness of the coating layer is 50 to 200 nm.
17 . The anode material according to claim 13 , wherein M represents a metal element in the M y SiO z compound, a weight percentage of Sr and the metal element M is 0.5 wt % to 15 wt % based on a total weight of the silicon-based particles.
18 . The anode material according to claim 13 , wherein M represents a metal element in the M y SiO z compound, a weight percentage of Sr and the metal element M is 1 wt % to 12 wt % based on a total weight of the silicon-based particles.
19 . The anode according to claim 8 , wherein the coating layer further comprises at least one compound represented by formula M y SiO z ; M comprises Li, Mg, Ca, Ba, Al, Ti, Zn, or any combination thereof; and 0<y<3, and 0.5<z<6.
20 . The anode according to claim 19 , wherein M further comprises Li; and a weight percentage of the element Li is greater than 0 wt % and less than or equal to 5 wt % based on a total weight of the silicon-based particles.
21 . The anode according to claim 20 , wherein the weight percentage of the element Li is 1 wt % to 4 wt % based on the total weight of the silicon-based particles.
22 . The anode according to claim 19 , wherein the M y SiO z compound comprises Li 2 SiO 3 , Li 2 Si 2 O 5 , Mg 2 SiO 4 , MgSiO 3 , CaSiO 3 , BaSiO 3 , Al 2 SiO 5 , TiSiO 4 , Zn 2 SiO 4 , or any combination thereof; and a thickness of the coating layer is 50 to 200 nm.
23 . The anode according to claim 19 , wherein M represents a metal element in the M y SiO z compound, and a weight percentage of Sr and the metal element M is 0.5 wt % to 15 wt % based on a total weight of the silicon-based particles.