Image sensor and electronic apparatus
An image sensor comprises a first substrate having a first photoelectric transducer and a second photoelectric transducer formed on the first substrate, a first wiring formed on the first substrate and connected to the first photoelectric transducer and the second photoelectric transducer, a second substrate having a pixel transistor formed on the second substrate, the pixel transistor being connected to the first photoelectric transducer and the second photoelectric transducer, a second wiring formed on the second substrate, and a third wiring formed to penetrate the first substrate and the second substrate and connected to the first wiring and the second wiring.
1 . An image sensor comprising:
a first substrate having a first photoelectric transducer and a second photoelectric transducer formed in the first substrate;
a first wiring formed in the first substrate and connected to the first photoelectric transducer and the second photoelectric transducer;
a second substrate having a pixel transistor formed in the second substrate, the pixel transistor being connected to the first photoelectric transducer and the second photoelectric transducer;
a second wiring formed in the second substrate; and
a third wiring formed under a set region of the first photoelectric transducer and the second photoelectric transducer in a cross-section view and connected to the first wiring and the second wiring.
2 . The image sensor according to claim 1 ,
wherein the pixel transistor has at least one of an amplification transistor, a reset transistor, and a selection transistor.
3 . The image sensor according to claim 1 ,
wherein the first substrate has a first transfer transistor connected to the first photoelectric transducer and a second transfer transistor connected to the second photoelectric transducer.
4 . The image sensor according to claim 3 ,
wherein the first wiring is connected to a first floating diffusion region connected to the first transfer transistor and a second floating diffusion region connected to the second transfer transistor.
5 . The image sensor according to claim 4 , further comprising:
a third substrate stacked on the second substrate and having a logic circuit configured to process a signal generated by the first photoelectric transducer or the second photoelectric transducer.
6 . An electronic apparatus comprising:
an image sensor;
an optical system configured to guide incident light to the image sensor; and
a processing unit configured to process a signal output from the image sensor,
wherein the image sensor includes
a first substrate having a first photoelectric transducer and a second photoelectric transducer formed in the first substrate;
a first wiring formed in the first substrate and connected to the first photoelectric transducer and the second photoelectric transducer;
a second substrate having a pixel transistor formed in the second substrate, the pixel transistor being connected to the first photoelectric transducer and the second photoelectric transducer;
a second wiring formed in the second substrate; and
a third wiring formed under a set region of the first photoelectric transducer and the second photoelectric transducer in a cross-section view and connected to the first wiring and the second wiring.
7 . The image sensor according to claim 1 , wherein
the third wiring is formed under the set region of the first photoelectric transducer, the second photoelectric transducer, a third photoelectric transducer, and a fourth photoelectric transducer, in the cross-section view.
8 . The electronic apparatus according to claim 6 , wherein
the third wiring is formed under the set region of the first photoelectric transducer, the second photoelectric transducer, a third photoelectric transducer, and a fourth photoelectric transducer, in the cross-section view.