IP Library › Granted Patent US 12,615,898
Granted Patent B2
US 12,615,898 · App. 18/114,039 · Granted Apr 28, 2026

Mass-transfer method and mass-transfer device for micro semiconductor chips

Inventors: Joonyong Park (Suwon-si, KR); Dongho Kim (Suwon-si, KR); Hyunjoon Kim (Suwon-si, KR); Seogwoo Hong (Suwon-si, KR); Kyungwook Hwang (Suwon-si, KR); Junsik Hwang (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10W90/00H10P72/16
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Quick Facts
Patent No.
US 12,615,898
App. No.
18/114,039
Granted
Apr 28, 2026
Kind
B2
Abstract

A method of mass-transferring a plurality of micro semiconductor chips, including mass-transferring a plurality of first micro semiconductor chips onto a first substrate such that they are disposed in a plurality of first grooves of the first substrate; determining whether an empty first groove is present; and positioning a second micro semiconductor chip in the empty first groove, wherein the positioning may include transferring a plurality of second micro semiconductor chips onto a second substrate separate from the first substrate; and adsorbing the second micro semiconductor chip from the second substrate, and positioning the adsorbed second micro semiconductor chip in the empty first groove, using an electrostatic force or an electromagnetic force.

Claims (47)

1 . A mass-transfer method of mass-transferring a plurality of micro semiconductor chips, the mass-transfer method comprising:

mass-transferring a plurality of first micro semiconductor chips onto a first substrate such that the plurality of first micro semiconductor chips are disposed in a plurality of first grooves of the first substrate;

determining whether an empty first groove is present in the first substrate, wherein the plurality of first micro semiconductor chips are not disposed in the plurality of first grooves; and

positioning a second micro semiconductor chip in the empty first groove, wherein the second micro semiconductor chip is identical to a first micro semiconductor chip from among the plurality of first micro semiconductor chips,

wherein the positioning comprises:

transferring a plurality of second micro semiconductor chips onto a second substrate separate from the first substrate, wherein the second micro semiconductor chip is included in the plurality of second micro semiconductor chips;

adsorbing the second micro semiconductor chip from the second substrate; and

positioning the adsorbed second micro semiconductor chip in the empty first groove, using an electrostatic force or an electromagnetic force.

2 . The mass-transfer method of claim 1 , wherein the plurality of first micro semiconductor chips are transferred onto the first substrate by a fluidic self assembly method, and

wherein the plurality of second micro semiconductor chips are transferred onto the second substrate by the fluidic self assembly method.

3 . The mass-transfer method of claim 2 ,

wherein an upper surface of the first micro semiconductor chip has a different interfacial energy than a lower surface of the first micro semiconductor chip,

wherein an upper surface of the second micro semiconductor chip has the different interfacial energy than a lower surface of the second micro semiconductor chip,

wherein the first micro semiconductor chip is disposed in a first groove of the plurality of first grooves such that the upper surface of the second micro semiconductor chip faces in a first direction, and

wherein the second micro semiconductor chip is positioned in the empty first groove such that the upper surface of the second micro semiconductor chip faces in the first direction.

4 . The mass-transfer method of claim 1 , wherein the determining comprises detecting first information about a position of the empty first groove on the first substrate, and

wherein the second micro semiconductor chip is positioned in the empty first groove based on the detected first information.

5 . The mass-transfer method of claim 4 , wherein the positioning comprises:

adsorbing at least some of the plurality of second micro semiconductor chips from the second substrate to a specific region of an electromagnetic array using the electrostatic force or the electromagnetic force selectively generated in the specific region by the electromagnetic array, and

separating the second micro semiconductor chip from the electromagnetic array such that the second micro semiconductor chip is positioned in the empty first groove of the first substrate.

6 . The mass-transfer method of claim 5 , wherein the adsorbing comprises:

aligning the electromagnetic array on the second substrate, and

selectively generating the electrostatic force or the electromagnetic force in regions corresponding to the empty first groove, based on the detected first information.

7 . The mass-transfer method of claim 6 , wherein the separating of the second micro semiconductor chip comprises:

aligning the electromagnetic array and the first substrate such that the second micro semiconductor chip adsorbed to the electromagnetic array is opposed to the empty first groove, and

positioning the adsorbed second micro semiconductor chip in the empty first groove by removing the electrostatic force or the electromagnetic force generated in the electromagnetic array.

8 . The mass-transfer method of claim 5 , wherein the adsorbing of the at least some of the plurality of second micro semiconductor chips comprises:

aligning the electromagnetic array on the second substrate,

adsorbing the plurality of second micro semiconductor chips transferred onto the second substrate, by generating the electrostatic force or the electromagnetic force in an entire region of the electromagnetic array,

inverting the electromagnetic array such that the adsorbed plurality of second micro semiconductor chips face upward, and

rearranging the plurality of second micro semiconductor chips by selectively generating the electrostatic force or the electromagnetic force in a region corresponding to the empty first groove of the electromagnetic array, based on the detected first information.

9 . The mass-transfer method of claim 5 , wherein after the mass-transferring, a misplaced first micro semiconductor chip is disposed on a region of the first substrate other than the plurality of first grooves, and

wherein the method further comprises removing the misplaced first micro semiconductor chip using the electromagnetic array.

10 . The mass-transfer method of claim 9 , wherein the first substrate includes a barrier rib defining the plurality of first grooves,

wherein the misplaced first micro semiconductor chip is transferred onto the barrier rib during the mass-transferring, and

wherein the method further comprises selectively removing the misplaced first micro semiconductor chip from the barrier rib using the electromagnetic array by generating the electrostatic force or the electromagnetic force in a region of the electromagnetic array overlapping the barrier rib.

11 . The mass-transfer method of claim 1 , further comprising transferring the plurality of first micro semiconductor chips and the second micro semiconductor chip from the first substrate onto a driving substrate.

12 . The mass-transfer method of claim 1 , wherein a size of each micro semiconductor chip of the plurality of first micro semiconductor chips and the plurality of second micro semiconductor chips is equal to or less than about 1,000 μm.

13 . The mass-transfer method of claim 1 , wherein each micro semiconductor chip of the plurality of first micro semiconductor chips and the plurality of second micro semiconductor chips is a micro light emitting diode.

14 . The mass-transfer method of claim 1 , wherein the first substrate includes a transfer substrate or a driving substrate.

15 . A method of transferring a plurality of micro semiconductor chips, the method comprising:

mass-transferring a plurality of first micro semiconductor chips into a plurality of first grooves of the first substrate;

detecting an empty first groove of the first substrate, wherein the plurality of first micro semiconductor chips are not disposed in the plurality of first grooves; and

mass-transferring at least one second micro semiconductor chip onto a second substrate separate from the first substrate;

adsorbing the at least one second micro semiconductor chip from the second substrate onto an electromagnetic array;

aligning the electromagnetic array with the first substrate such that the adsorbed at least one second micro semiconductor chip is aligned with the empty first groove; and

releasing the at least one second micro semiconductor chip from the electromagnetic array such that the at least one second micro semiconductor chip is placed into the empty first groove of the first substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2023
From: PARK, JOONYONG; KIM, DONGHO; KIM, HYUNJOON; HONG, SEOGWOO; HWANG, KYUNGWOOK; HWANG, JUNSIK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 062801/0138 →
Priority Claims (1)
KR 10-2022-0113022 · Sep 6, 2022 · national
Continuity (1)
Related Publication 20240079395A1 · Mar 7, 2024
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