Current sensor with magnetic and resistive sensing and shared calibration
A current sensor for sensing a current through a conductor includes a magnetic field sensing element configured to generate a magnetic field signal indicative of a magnetic field associated with the current through the conductor, a first processing path responsive to the magnetic field signal and configured to generate a first current sensor output signal, a resistive element coupled to the conductor, a second processing path coupled across the resistive element and configured to measure a voltage across the resistive element and generate a second current sensor output signal, and a shared processor configured to calibrate the first processing path and second processing path. The shared processor can be configured to generate one or more of a sensitivity calibration signal, a temperature calibration signal, an offset calibration signal, or a lifetime drift calibration signal.
1 . A current sensor for sensing a current through a conductor, comprising:
a magnetic field sensing element configured to generate a magnetic field signal indicative of a magnetic field associated with the current through the conductor;
a first processing path responsive to the magnetic field signal and configured to generate a first current sensor output signal;
a resistive element coupled to the conductor;
a second processing path coupled across the resistive element and configured to measure a voltage across the resistive element and generate a second current sensor output signal; and
a shared processor configured to calibrate the first processing path and second processing path.
2 . The current sensor of claim 1 , wherein the shared processor is configured to generate a sensitivity calibration signal.
3 . The current sensor of claim 2 , wherein the sensitivity calibration signal comprises:
a first sensitivity calibration signal based on a difference between the magnetic field signal and an expected magnetic field signal associated with a predetermined current through the conductor for coupling to the first processing path; and
a second sensitivity calibration signal based on a difference between the measured voltage across the resistive element and an expected voltage across the resistive element associated with the predetermined current through the conductor for coupling to the second processing path.
4 . The current sensor of claim 1 , wherein the shared processor is configured to generate a temperature calibration signal.
5 . The current sensor of claim 4 , wherein the magnetic field sensing element has a first temperature coefficient, the resistive element has a second temperature coefficient, and wherein the magnetic field sensing element and the resistive element are selected so that the first temperature coefficient and the second temperature coefficient are substantially equal in value and opposite in polarity.
6 . The current sensor of claim 4 , further comprising a temperature sensing element positioned adjacent to the magnetic field sensing element and configured to generate a temperature signal indicative of a measured temperature associated with the magnetic field sensing element, wherein the temperature signal is coupled to the shared processor.
7 . The current sensor of claim 6 , wherein the temperature calibration signal comprises:
a first temperature compensation signal based on a difference between the magnetic field signal and an expected magnetic field signal associated with the measured temperature for coupling to the first processing path; and
a second temperature compensation signal based on a difference between the measured voltage across the resistive element and an expected voltage across the resistive element associated with the measured temperature for coupling to the second processing path.
8 . The current sensor of claim 1 , wherein the shared processor is configured to generate an offset calibration signal.
9 . The current sensor of claim 8 , wherein the offset calibration signal is based on a measured voltage across the resistive element and is coupled to first processing path.
10 . The current sensor of claim 1 , wherein the shared processor is configured to generate a lifetime drift calibration signal.
11 . The current sensor of claim 10 , wherein the lifetime drift calibration signal is based on a measured voltage across the resistive element and is coupled to first processing path.
12 . The current sensor of claim 1 , wherein the first processing path comprises a first front-end amplifier and the second processing path comprises a second front-end amplifier and wherein the calibration signal is coupled to the first front end amplifier and to the second front end amplifier.
13 . A method of calibrating a current sensor comprising:
generating a magnetic field signal with a magnetic field sensing element, wherein the magnetic field signal is indicative of a magnetic field associated with a current through a conductor;
generating a first current sensor output signal with a first processing path responsive to the magnetic field signal;
coupling a resistive element to the conductor;
measuring a voltage across the resistive element;
generating a second current sensor output signal with a second processing path responsive to the measured voltage coupled across the resistive element; and
calibrating the first processing path and the second processing path with a shared processor.
14 . The method of claim 13 , wherein calibrating the first processing path comprises adjusting a sensitivity of the first processing path based on a difference between the magnetic field signal and an expected magnetic field signal associated with a predetermined current through the conductor for coupling to the first processing path and wherein calibrating the second processing path comprises adjusting a sensitivity of the second processing path based on a difference between the measured voltage across the resistive element and an expected voltage across the resistive element associated with the predetermined current through the conductor for coupling to the second processing path.
15 . The method of claim 13 , further comprising:
providing the magnetic field sensing element with a first temperature coefficient; and
providing the resistive element with a second temperature coefficient that is substantially equal in value and opposite in polarity with respect to the first temperature coefficient.
16 . The method of claim 13 , further comprising measuring a temperature associated with the magnetic field sensing element and adjusting the first processing path based on the measured temperature based on a difference between the magnetic field signal and an expected magnetic field signal associated with the measured temperature for coupling to the first processing path.
17 . The method of claim 16 , further comprising adjusting the second processing path based on a difference between the measured voltage across the resistive element and an expected voltage across the resistive element associated with the measured temperature.
18 . The method of claim 13 , further comprising adjusting an offset the first processing path based on a measured voltage across the resistive element.
19 . The method of claim 13 , further comprising adjusting a lifetime drift the first processing path based on a measured voltage across the resistive element.