Semiconductor device
A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.
1 . A semiconductor device comprising:
an active pattern extending in a first horizontal direction on a substrate;
a plurality of lower nanosheets stacked on the active pattern to be spaced apart from one another in a vertical direction;
a separation layer on the plurality of lower nanosheets;
a plurality of upper nanosheets stacked on the separation layer to be spaced apart from one another in the vertical direction;
a gate electrode on the active pattern and extending in a second horizontal direction, which is different from the first horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer, and the plurality of upper nanosheets; and
a first conductive layer between the gate electrode and each of a top surface of and a bottom surface of the plurality of upper nanosheets, the first conductive layer is not between the gate electrode and sidewalls in the second horizontal direction of the plurality of upper nanosheets.
2 . The semiconductor device of claim 1 , wherein the first conductive layer is not between the gate electrode and the plurality of lower nanosheets.
3 . The semiconductor device of claim 1 , further comprising:
a dummy nanosheet spaced apart from the plurality of upper nanosheets in the vertical direction and surrounded by the gate electrode, the dummy nanosheet including an insulating material.
4 . The semiconductor device of claim 3 , wherein the first conductive layer is between the gate electrode and a bottom surface of the dummy nanosheet, the first conductive layer is not between the gate electrode and a top surface of the dummy nanosheet.
5 . The semiconductor device of claim 1 , wherein the first conductive layer is between the gate electrode and a top surface of the separation layer.
6 . The semiconductor device of claim 1 , wherein a width, in the second horizontal direction, of the first conductive layer is less than a width, in the second horizontal direction, of the plurality of upper nanosheets.
7 . The semiconductor device of claim 1 , wherein the gate electrode includes a lower gate electrode surrounding the plurality of lower nanosheets on the active pattern, and an upper gate electrode spaced apart from the lower gate electrode in the vertical direction and surrounding the plurality of upper nanosheets.
8 . The semiconductor device of claim 1 , further comprising:
a second conductive layer between the gate electrode and the plurality of lower nanosheets, the second conductive layer not between the gate electrode and the plurality of upper nanosheets.
9 . The semiconductor device of claim 8 , further comprising:
a third conductive layer between the gate electrode and the first conductive layer, the third conductive layer not between the gate electrode and the sidewalls in the second horizontal direction of each of the plurality of upper nanosheets.
10 . The semiconductor device of claim 1 , further comprising:
a second conductive layer between the gate electrode and the plurality of lower nanosheets and between the gate electrode and the plurality of upper nanosheets,
wherein the first conductive layer is between the plurality of upper nanosheets and the second conductive layer.
11 . The semiconductor device of claim 1 , further comprising:
a gate insulating layer between the gate electrode and each of the plurality of lower nanosheets, the separation layer, and the plurality of upper nanosheets,
wherein the first conductive layer is between the gate electrode and the gate insulating layer.
12 . The semiconductor device of claim 11 , wherein the gate insulating layer between the gate electrode and the plurality of lower nanosheets is in contact with the gate electrode.
13 . A semiconductor device comprising:
an active pattern on a substrate and extending in a first horizontal direction;
a plurality of lower nanosheets stacked on the active pattern to be spaced apart from one another in a vertical direction;
a separation layer on the plurality of lower nanosheets;
a plurality of upper nanosheets stacked on the separation layer to be spaced apart from one another in the vertical direction;
a dummy nanosheet spaced apart from the plurality of upper nanosheets in the vertical direction, the dummy nanosheet including an insulating material;
a gate electrode on the active pattern and extending in a second horizontal direction, which is different from the first horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer, the plurality of upper nanosheets, and the dummy nanosheet; and
a first conductive layer disposed between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets, the first conductive layer not between the gate electrode and the plurality of lower nanosheets.
14 . The semiconductor device of claim 13 , wherein sidewalls of the dummy nanosheet in the second horizontal direction are aligned in the vertical direction with sidewalls of the plurality of upper nanosheets in the second horizontal direction.
15 . The semiconductor device of claim 13 , wherein the first conductive layer is between the gate electrode and a bottom surface of the dummy nanosheet, the first conductive layer is not between the gate electrode and a top surface of the dummy nanosheet.
16 . The semiconductor device of claim 13 , wherein a width, in the second horizontal direction, of the first conductive layer is less than a width, in the second horizontal direction, of the plurality of upper nanosheets.
17 . The semiconductor device of claim 13 , further comprising:
a second conductive layer between the gate electrode and the plurality of lower nanosheets, the second conductive layer not between the gate electrode and the plurality of upper nanosheets.
18 . The semiconductor device of claim 13 , further comprising:
a second conductive layer between the gate electrode and the plurality of lower nanosheets, between the gate electrode and sidewalls in the second horizontal direction of the plurality of upper nanosheets, and between the gate electrode and the first conductive layer.
19 . The semiconductor device of claim 18 , further comprising:
a third conductive layer between the gate electrode and the second conductive layer on each of the top surface and the bottom surface of the plurality of upper nanosheets, the third conductive layer not between the gate electrode and the sidewalls in the second horizontal direction of the plurality of upper nanosheets.
20 . A semiconductor device comprising:
an active pattern extending in a first horizontal direction on a substrate;
a plurality of lower nanosheets stacked on the active pattern to be spaced apart from one another in a vertical direction;
a separation layer on the plurality of lower nanosheets;
a plurality of upper nanosheets stacked on the separation layer to be spaced apart from one another in the vertical direction;
a dummy nanosheet spaced apart from the plurality of upper nanosheets in the vertical direction, the dummy nanosheet includes an insulating material;
a gate insulating layer along surfaces of the plurality of lower nanosheets, the separation layer, the plurality of upper nanosheets, and the dummy nanosheet;
a gate electrode on the active pattern and extending in a second horizontal direction, which is different from the first horizontal direction, the gate electrode surrounding the plurality of lower nanosheets, the separation layer, the plurality of upper nanosheets, and the dummy nanosheet; and
a conductive layer between the gate electrode and the gate insulating layer,
wherein the conductive layer is between the gate electrode and a top surface of the separation layer, between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets, and between the gate electrode and a bottom surface of the dummy nanosheet,
the conductive layer is not between the gate electrode and sidewalls in the second horizontal direction of the separation layer, between the gate electrode and sidewalls in the second horizontal direction of the plurality of upper nanosheets, between the gate electrode and each of a top surface and sidewalls in the second horizontal direction of the dummy nanosheet, between the gate electrode and a bottom surface of the separation layer, and between the gate electrode and the plurality of lower nanosheets, and
a width, in the second horizontal direction, of the conductive layer is less than a width, in the second horizontal direction, of the plurality of upper nanosheets.