Perovskite optoelectronic device and manufacturing method therefor
The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.
1 . A perovskite optoelectronic device comprising:
a substrate;
a lower electrode disposed over the substrate;
an electron transport layer disposed over the lower electrode;
a light absorption layer disposed over the electron transport layer, the light absorption layer including perovskite;
a hole transport layer disposed over the light absorption layer; and
an upper electrode disposed over the hole transport layer,
wherein at least one of the lower electrode and the upper electrode includes graphene oxide deposited on carbon nanotubes,
wherein the lower electrode includes the graphene oxide stacked over the carbon nanotubes, and
wherein the carbon nanotubes in the lower electrode, the graphene oxide in the lower electrode, the electron transport layer, the light absorption layer, the hole transport layer and the upper electrode are sequentially stacked over the substrate.
2 . The perovskite optoelectronic device of claim 1 , wherein the electron transport layer comprises polyethyleneimine or a fullerene-based material.
3 . The perovskite optoelectronic device of claim 1 , wherein the hole transport layer comprises a p-type organic semiconductor or a conductive polymer material.
4 . The perovskite optoelectronic device of claim 1 , wherein the hole transport layer includes Spiro-OMETAD (2,2′,7,7′-tetrakis (N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene) and PEDOT:PSS (poly(3,4-ethylenedioxythiophene)poly(styrene sulfonate)).
5 . The perovskite optoelectronic device of claim 1 , wherein the carbon nanotubes includes a single-walled carbon nanotube.
6 . The perovskite optoelectronic device of claim 1 , wherein the upper electrode includes the graphene oxide stacked over the carbon nanotubes.
7 . The perovskite optoelectronic device of claim 1 , wherein the upper electrode includes at least one or more of platinum (Pt), gold (Au), aluminum (Al), nickel (Ni), copper (Cu), silver (Ag), indium (In), ruthenium (Ru), palladium (Pd), rhodium (Rh), iridium (Ir) and osmium (Os).
8 . The perovskite optoelectronic device of claim 4 , wherein the lower electrode, the electron transport layer, the light absorption layer, the Spiro-OMETAD, the PEDOT:PSS, the graphene oxide, and the carbon nanotubes are sequentially stacked over the substrate.
9 . The perovskite optoelectronic device of claim 1 , wherein the perovskite optoelectronic device further comprises a substrate disposed over the upper electrode.