IP Library › Granted Patent US 12,623,899
Granted Patent B2
US 12,623,899 · App. 18/010,935 · Granted May 12, 2026

Absolute pressure sensing MEMS microphone, microphone unit and electronic device

Inventors: Quanbo Zou (Shandong, CN); Dexin Wang (Shandong, CN); Huabin Fang (Shandong, CN)
Assignee: Goertek Microelectronics Inc.
B81B3/0021B81B2201/0257B81B2201/0264B81B2203/0127B81B2203/0315B81B2203/04
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Quick Facts
Patent No.
US 12,623,899
App. No.
18/010,935
Granted
May 12, 2026
Kind
B2
Abstract

Embodiments of the present disclosure provides an absolute pressure sensing MEMS microphone, a microphone unit and an electronic device. The absolute pressure sensing MEMS microphone includes: a diaphragm; a back electrode plate; a spacer between the diaphragm and the back electrode plate, wherein the diaphragm, the back electrode plate and the spacer form a vacuum cavity, an air pressure in the vacuum cavity is a first air pressure, wherein a gap separating the diaphragm from the back electrode plate by the spacer is a fabrication gap, wherein in a state where the air pressure inside and outside the diaphragm are both the first air pressure, an effective vacuum gap between the diaphragm and the back electrode plate is the first vacuum gap, and wherein the first vacuum gap is larger than the fabrication gap.

Claims (24)

1 . An absolute pressure sensing MEMS microphone, comprising:

a diaphragm;

a back electrode plate;

a spacer between the diaphragm and the back electrode plate,

wherein, the diaphragm, the back electrode plate and the spacer form a vacuum cavity having a first air pressure,

wherein, the spacer forms a fabrication gap between the diaphragm and the back electrode plate,

wherein, in a state where an air pressures outside the diaphragm is at the first air pressure, an effective vacuum gap between the diaphragm and the back electrode plate is a first vacuum gap,

wherein, the first vacuum gap is larger than the fabrication gap, and

wherein, at a standard atmospheric pressure without an operating bias, the effective vacuum gap between the diaphragm and the back electrode plate is a second vacuum gap, and the second vacuum gap is larger than the fabrication gap.

2 . The absolute pressure sensing MEMS microphone according to claim 1 , wherein the first vacuum gap is greater than twice the fabrication gap or equal to twice the fabrication gap.

3 . The absolute pressure sensing MEMS microphone according to claim 2 , wherein the first vacuum gap is less than or equal to 10 times the fabrication gap.

4 . The absolute pressure sensing MEMS microphone according to claim 1 , wherein, at standard atmospheric pressure, under a state that an operating bias is applied, the effective vacuum gap between the diaphragm and the back electrode plate is a third vacuum gap, and the third vacuum gap is greater than or equal to 80% of the fabrication gap and less than or equal to 120% of the fabrication gap.

5 . The absolute pressure sensing MEMS microphone according to claim 1 , wherein the diaphragm is pre-deviated by a stress structure, so that the first vacuum gap is larger than the fabrication gap.

6 . The absolute pressure sensing MEMS microphone according to claim 5 , wherein the stress structure comprises the diaphragm and a compressive stress component,

wherein, the diaphragm has a tensile stress along a surface direction of the diaphragm surface, and

wherein, the compressive stress component is attached to outside of the diaphragm relative to the vacuum cavity, and has a compressive stress along the surface direction of the diaphragm.

7 . The absolute pressure sensing MEMS microphone according to claim 5 , wherein said stress structure comprises a composite layer of the diaphragm,

wherein, the composite layer includes an inner film located inside the vacuum cavity and an outer film located outside,

wherein, the inner film has a tensile stress along a surface direction of the diaphragm and the outer film has a compressive stress along the surface direction of the diaphragm.

8 . The absolute pressure sensing MEMS microphone according to claim 5 , wherein the stress structure includes the spacer and a fixing member securing the diaphragm to the spacer,

wherein, the fixing member has a tensile stress along a surface direction of the diaphragm and is attached to an upper surface of the diaphragm, and the spacer has a compressive stress along the surface direction of the diaphragm and is attached to a lower surface of the diaphragm.

9 . The absolute pressure sensing MEMS microphone according to claim 5 , wherein the stress structure comprises a corrugated membrane structure on the diaphragm, so that the diaphragm bulges outwards relative to the vacuum cavity.

10 . A microphone unit, comprising a unit shell, the absolute pressure sensing MEMS microphone according to claim 1 and an integrated circuit chip, wherein the absolute pressure sensing MEMS microphone and the integrated circuit chip are arranged in the unit shell.

11 . An electronic device comprising the microphone unit according to claim 10 .

Assignments (2)
CHANGE OF NAME Recorded Oct 15, 2025
From: GOERTEK MICROELECTRONICS CO., LTD.
To: GOERTEK MICROELECTRONICS INC.
Reel/Frame 073086/0700 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2023
From: ZOU, QUANBO; WANG, DEXIN; FANG, HUABIN
To: GOERTEKMICROELECTRONICS CO. LTD.
Reel/Frame 063128/0707 →
Priority Claims (1)
CN 202010547998.2 · Jun 16, 2020 · national
Continuity (1)
Related Publication 20230234833A1 · Jul 27, 2023
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