Microelectronic devices, and related memory devices and electronic systems
A microelectronic device includes a memory array structure and a control circuitry structure vertically overlying and bonded to the memory array structure. The memory array structure includes array regions respectively including memory cells, digit lines, and word lines within horizontal areas thereof. The control circuitry structure includes control circuitry regions, sense amplifier (SA) sections including SA circuitry, and sub-word line driver (SWD) sections including SWD circuitry. The control circuitry regions horizontally overlap the array regions of the memory array structure. The SA sections respectively horizontally overlap each of two of the control circuitry regions horizontally neighboring one another in a first direction. The SWD sections are respectively interposed between two other of the control circuitry regions horizontally neighboring one another in a second direction orthogonal to the first direction. Additional microelectronic devices, memory devices, and electronic systems are also described.
1 . A microelectronic device, comprising:
a memory array structure comprising array regions respectively comprising memory cells, digit lines, and word lines within horizontal areas thereof; and
a control circuitry structure vertically overlying and bonded to the memory array structure, the control circuitry structure comprising:
control circuitry regions horizontally overlapping the array regions of the memory array structure;
sense amplifier (SA) sections comprising SA circuitry, the SA sections respectively horizontally overlapping each of two of the control circuitry regions horizontally neighboring one another in a first direction; and
sub-word line driver (SWD) sections comprising SWD circuitry, the SWD sections respectively interposed between two other of the control circuitry regions horizontally neighboring one another in a second direction orthogonal to the first direction.
2 . The microelectronic device of claim 1 , wherein the memory array structure further comprises:
digit line exit regions alternating with the array regions in the first direction and respectively comprising:
end portions of some of the digit lines; and
digit line contacts coupled to the end portions of the some of the digit lines; and
word line exit regions alternating with the array regions in the second direction and respectively comprising:
end portions of some of the word lines; and
word line contacts coupled to the end portions of the some of the word lines.
3 . The microelectronic device of claim 2 , wherein the control circuitry structure further comprises:
digit line contact regions alternating with the control circuitry regions in the first direction and respectively comprising:
additional digit line contacts coupled to the digit line contacts within a respective one of the digit line exit regions of the memory array structure; and
routing structures coupled to the additional digit line contacts and to the SA circuitry of a respective one of the SA sections; and
word line contact regions alternating with the control circuitry regions in the second direction and respectively comprising:
additional word line contacts coupled to the word line contacts within a respective one of the word line exit regions of the memory array structure; and
additional routing structures coupled to the additional word line contacts and to the SWD circuitry of a respective one of the SWD sections.
4 . The microelectronic device of claim 3 , wherein:
the digit line contact regions of the control circuitry structure horizontally overlap the digit line exit regions of the memory array structure; and
the word line contact regions of the control circuitry structure horizontally overlap the word line exit regions of the memory array structure.
5 . The microelectronic device of claim 4 , wherein horizontal areas of the digit line contact regions of the control circuitry structure are greater than horizontal areas of the digit line exit regions of the memory array structure.
6 . The microelectronic device of claim 4 , wherein the additional digit line contacts within the digit line contact regions of the control circuitry structure physically contact the digit line contacts within the digit line exit regions of the memory array structure.
7 . The microelectronic device of claim 3 , wherein the SA sections of the control circuitry structure respectively horizontally overlap one of the digit line contact regions horizontally interposed in the first direction between the two of the control circuitry regions.
8 . The microelectronic device of claim 3 , wherein the SWD sections of the control circuitry structure are substantially confined within horizontal areas of word line exit regions of the memory array structure.
9 . The microelectronic device of claim 3 , wherein the digit line contact regions of the control circuitry structure comprise horizontally adjacent read/write (RW) gap areas of horizontally neighboring SA devices of the SA sections.
10 . The microelectronic device of claim 1 , wherein the control circuitry structure further comprises mini-gap (MG) sections respectively interposed between two of the SA sections horizontally neighboring one another in the second direction and two of the SWD sections horizontally neighboring one another in the first direction, the MG sections comprising routing structures operatively associated with the SA circuitry and the SWD circuitry.
11 . A memory device, comprising:
a memory array structure comprising:
array regions comprising memory cells, digit lines, and word lines;
digit line exit regions horizontally alternating with the array regions in a first direction and comprising horizontal ends of the digit lines within horizontal areas thereof; and
word line exit regions horizontally alternating with the array regions in a second direction and comprising horizontal ends of the word lines within horizontal areas thereof;
a control circuitry structure vertically overlying and bonded to the memory array structure, the control circuitry structure comprising:
control circuitry regions horizontally overlapping the array regions of the memory array structure;
sense amplifier (SA) sections comprising SA devices, the SA sections respectively horizontally overlapping two of the control circuitry regions neighboring one another in the first direction;
digit line contact regions within horizontal areas of the SA sections and horizontally overlapping the digit line exit regions of the memory array structure, horizontal areas of the digit line contact regions defined by horizontally adjacent read/write (RW) gap areas of pairs of the SA devices of the SA sections;
sub-word line driver (SWD) sections comprising SWD devices, the SWD sections respectively horizontally interposed between two other of the control circuitry regions neighboring one another in the second direction; and
word line contact regions within horizontal areas of the SWD sections and horizontally overlapping the word line exit regions of the memory array structure.
12 . The memory device of claim 11 , wherein the SA devices of the SA sections comprise voltage transfer characteristic (VTC) SA devices, each of the VTC SA devices comprising:
a RW gap area;
an N-type sense amplifier (NSA) area neighboring the RW gap area and including NSA circuitry;
a VTC area neighboring the NSA area and including VTC circuitry;
a P-type sense amplifier (PSA) area neighboring the VTC area and including PSA circuitry;
an additional VTC area neighboring the PSA area and including additional VTC circuitry;
an additional NSA area neighboring the additional VTC area and including additional NSA circuitry; and
a column select (CS) area neighboring the additional NSA area and including CS circuitry.
13 . The memory device of claim 11 , wherein:
the digit lines of the memory array structure comprise:
odd digit lines; and
even digit lines horizontally alternating with the odd digit lines in the second direction; and
the SA sections of the control circuitry structure comprise:
odd SA sections comprising odd SA devices coupled to the odd digit lines; and
even SA sections horizontally alternating with the odd SA sections in the first direction and comprising even SA devices coupled to the even digit lines.
14 . The memory device of claim 13 , wherein the digit line contact regions of the control circuitry structure comprise:
odd digit line contact regions within horizontal areas of the odd SA sections and comprising:
odd digit line contacts coupled to the odd digit lines; and
odd digit line routing structures extending between and coupled to the odd digit line contacts and the odd SA devices of the odd SA sections; and
even digit line contact regions within horizontal areas of the even SA sections and comprising:
even digit line contacts coupled to the even digit lines; and
even digit line routing structures extending between and coupled to the even digit line contacts and the even SA devices of the even SA sections.
15 . The memory device of claim 11 , wherein:
the word lines of the memory array structure comprise:
odd word lines; and
even word lines alternating with the odd word lines in the first direction; and
the SWD sections of the control circuitry structure comprise:
odd SWD sections comprising odd SWD devices coupled to the odd word lines; and
even SWD sections horizontally alternating with the odd SWD sections in the second direction and comprising even SWD devices coupled to the even word lines.
16 . The memory device of claim 15 , wherein the word line contact regions of the control circuitry structure comprise:
odd word line contact regions within horizontal areas of the odd SWD sections and comprising:
odd word line contacts coupled to the odd word lines; and
odd word line routing structures extending between and coupled to the odd word line contacts and the odd SWD devices of the odd SWD sections; and
even word line contact regions within horizontal areas of the even SWD sections and comprising:
even word line contacts coupled to the even word lines; and
even word line routing structures extending between and coupled to the even word line contacts and the even SWD devices of the even SWD sections.
17 . The memory device of claim 11 , wherein each of the SWD sections of the control circuitry structure is substantially confined within a horizontal area of a respective one of the word line exit regions of the memory array structure.
18 . The memory device of claim 11 , wherein the control circuitry structure further comprises mini-gap (MG) sections respectively extending in the first direction between a horizontally neighboring pair of the SWD sections and respectively extending in the second direction between a horizontally neighboring pair of the SA sections, the MG sections respectively comprising:
conductive routing structures coupled to at least some of the SWD devices of the horizontally neighboring pair of the SWD sections; and
additional conductive routing structures coupled to at least some of the SA devices of the horizontally neighboring pair of the SA sections.
19 . An electronic system, comprising:
a processor device operably connected to an input device and an output device; and
a memory device operably connected to the processor device and comprising:
a memory array structure comprising array regions respectively comprising memory cells, digit lines, and word lines within horizontal areas thereof; and
a control circuitry structure vertically overlying and bonded to the memory array structure, the control circuitry structure comprising:
control circuitry regions horizontally overlapping the array regions of the memory array structure;
sense amplifier (SA) sections comprising SA circuitry, the SA sections respectively overlapping two of the control circuitry regions neighboring one another in a first horizontal direction;
digit line contact regions within horizontal areas of the SA sections and comprising conductive structures coupled to the SA circuitry and the digit lines;
sub-word line driver (SWD) sections comprising SWD circuitry, the SWD sections respectively interposed between two other of the control circuitry regions neighboring one another in a second horizontal direction orthogonal to the first horizontal direction; and
word line contact regions within horizontal areas of the SWD sections and comprising additional conductive structures coupled to the SWD circuitry and the word lines.
20 . The electronic system of claim 19 , wherein the memory cells comprise dynamic random access memory (DRAM) cells.