Dual resonator structure for temperature-compensated oscillators, including related apparatuses
An apparatus comprises a micromechanical system including a semiconductor body. The semiconductor body comprises a first resonator, a second resonator, and a supporting portion. The first resonator is to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range. The second resonator is to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range. The supporting portion is to support both the first resonator and the second resonator.
1 . An apparatus comprising:
a microelectromechanical system including a semiconductor body, the semiconductor body comprising:
a first resonator, the first resonator including first resonating portions to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range;
a second resonator, the second resonator including second resonating portions to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range; and
a supporting portion, the supporting portion to support both the first resonator and the second resonator, the supporting portion including a first connecting portion to the first resonator and a second connecting portion to the second resonator, the first connecting portion surrounding respective portions of respective perimeters of the first resonating portions of the first resonator, the second connecting portion surrounding respective portions of respective perimeters of the second resonating portions of the second resonator.
2 . The apparatus of claim 1 , wherein:
the first resonator has a first temperature coefficient of frequency; and
the second resonator has a second temperature coefficient of frequency, the second temperature coefficient of frequency different from the first temperature coefficient of frequency.
3 . The apparatus of claim 1 , wherein:
the first resonator comprises a reference resonator;
the second resonator comprises a temperature sensing resonator; and
the supporting portion mechanically and thermally couples the first resonating portions of the first resonator and the second resonating portions of the second resonator.
4 . The apparatus of claim 1 , wherein the semiconductor body comprises:
at least one first drive electrode of the first resonator;
at least one first sense electrode of the first resonator;
at least one second drive electrode of the second resonator; and
at least one second sense electrode of the second resonator.
5 . The apparatus of claim 1 , wherein:
respective ones of the first resonating portions of the first resonator have a first shape and a first size;
respective ones of the second resonating portions of the second resonator have a second shape and a second size;
the second shape is substantially the same as the first shape; and
the second size is substantially the same as the first size.
6 . The apparatus of claim 5 , wherein the first resonator and the second resonator are substantially symmetric about a lateral axis of the semiconductor body.
7 . The apparatus of claim 1 , wherein the first resonator and the second resonator are orientated at a differential orientation angle with respect to one another.
8 . The apparatus of claim 7 , wherein:
the first resonating portions of the first resonator resonate at the first resonating frequency to exhibit a first acoustic wave propagation in a first direction;
the second resonating portions of the second resonator resonate at the second resonating frequency to exhibit a second acoustic wave propagation in a second direction; and
the first direction and the second direction are non-parallel.
9 . The apparatus of claim 1 , comprising:
a single supporting anchor to anchor the semiconductor body, the single supporting anchor in substantially a center of the supporting portion.
10 . The apparatus of claim 1 , wherein the first connecting portion surrounds about twenty-five (25) percent or more of the respective portions of the respective perimeters of the first resonating portions of the first resonator, and the second connecting portion surrounds about twenty-five (25) percent or more of the respective portions of the respective perimeters of the second resonating portions of the second resonator.
11 . The apparatus of claim 10 , wherein the first resonating frequency exhibits a change or delta in frequency over the predetermined temperature range that is less than a predetermined amount.
12 . The apparatus of claim 11 , wherein the predetermined amount is 600 parts-per-million over the predetermined temperature range of −40-90° C.
13 . The apparatus of claim 1 , wherein the second resonating portions of the second resonator are to resonate at the second resonating frequency that is generally linearly decreasing as temperature increases over the predetermined temperature range.
14 . The apparatus of claim 1 , wherein the semiconductor body comprises a single crystal silicon.
15 . The apparatus of claim 1 , comprising:
a single die comprising the semiconductor body.
16 . The apparatus of claim 1 , wherein respective ones of the first resonator and the second resonator comprise a dual-ring resonator including a first ring, a second ring, and a coupling beam to couple the first ring and the second ring.
17 . The apparatus of claim 1 , wherein respective ones of the first resonator and the second resonator comprise a ring resonator, a disc resonator, a square plate resonator, a clamped-clamped resonator, a cantilever resonator, a fixed-fixed beam resonator, and a comb drive resonator.
18 . An apparatus comprising:
an oscillator comprising:
a microelectromechanical system including a semiconductor body, the semiconductor body comprising:
a first resonator, the first resonator including first resonating portions to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range;
at least one first drive electrode of the first resonator;
at least one first sense electrode of the first resonator;
a second resonator, the second resonator including second resonating portions to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range;
at least one second drive electrode of the second resonator;
at least one second sense electrode of the second resonator; and
a supporting portion to support both the first resonator and the second resonator, the supporting portion including a first connecting portion to the first resonator and a second connecting portion to the second resonator, the first connecting portion surrounding respective portions of respective perimeters of the first resonating portions of the first resonator, the second connecting portion surrounding respective portions of respective perimeters of the second resonating portions of the second resonator.
19 . The apparatus of claim 18 , wherein the microelectromechanical system is on a first die, the apparatus comprising:
the oscillator comprising:
an electronic circuitry, the electronic circuitry on a second die attached to the first die, the electronic circuitry comprising:
a first drive circuitry, the first drive circuitry to generate a first drive signal to drive the first resonator via the at least one first drive electrode, the first drive signal having a first drive frequency;
a second drive circuitry, the second drive circuitry to generate a second drive signal to drive the second resonator via the at least one second drive electrode, the second drive signal having a second drive frequency;
a digital converter circuitry, the digital converter circuitry to receive a first sense signal from the first resonator via the at least one first sense electrode and to convert the first sense signal into first digital temperature data, the first sense signal having a first sense signal frequency and the first digital temperature data to represent a first temperature corresponding to the first sense signal frequency; and
the digital converter circuitry to receive a second sense signal from the second resonator via the at least one second sense electrode and to convert the second sense signal into second digital temperature data, the second sense signal having a second sense signal frequency and the second digital temperature data to represent a second temperature corresponding to the second sense signal frequency.
20 . The apparatus of claim 19 , comprising:
the electronic circuitry comprising:
a temperature compensation circuitry, the temperature compensation circuitry to generate an adjustment signal at least partially based on a ratio of changes in the first temperature represented by the first digital temperature data and the second temperature represented by the second digital temperature data, respectively; and
a phase-lock-loop circuitry, the phase-lock-loop circuitry to adjust the first sense signal frequency at least partially based on the adjustment signal for producing a temperature-compensated oscillator signal.
21 . The apparatus of claim 18 , wherein the first connecting portion surrounds about twenty-five (25) percent or more of the respective portions of the respective perimeters of the first resonating portions of the first resonator, and the second connecting portion surrounds about twenty-five (25) percent or more of the respective portions of the respective perimeters of the second resonating portions of the second resonator.
22 . The apparatus of claim 18 , wherein the supporting portion mechanically and thermally couples the first resonating portions of the first resonator and the second resonating portions of the second resonator.
23 . The apparatus of claim 18 , wherein:
respective ones of the first resonating portions of the first resonator have a first shape and a first size;
respective ones of the second resonating portions of the second resonator have a second shape and a second size;
the second shape is substantially the same as the first shape; and
the second size is substantially the same as the first size.
24 . The apparatus of claim 23 , wherein the first resonator and the second resonator are substantially symmetric about a lateral axis of the semiconductor body.
25 . The apparatus of claim 18 , wherein the first resonator and the second resonator are orientated at a differential orientation angle with respect to one another.
26 . The apparatus of claim 25 , wherein:
the first resonating portions of the first resonator resonate at the first resonating frequency to exhibit a first acoustic wave propagation in a first direction;
the second resonating portions of the second resonator resonate at the second resonating frequency to exhibit a second acoustic wave propagation in a second direction; and
the first direction and the second direction are non-parallel.
27 . The apparatus of claim 25 , wherein the differential orientation angle is about 45°.
28 . The apparatus of claim 18 , wherein the first resonating frequency exhibits a change or delta in frequency over the predetermined temperature range that is less than a predetermined amount.
29 . The apparatus of claim 18 , wherein the semiconductor body comprises a single crystal silicon.
30 . The apparatus of claim 18 , wherein respective ones of the first resonator and the second resonator comprise a dual-ring resonator including a first ring, a second ring, and a coupling beam to couple the first ring and the second ring.
31 . The apparatus of claim 18 , comprising:
a single supporting anchor to anchor the semiconductor body, the single supporting anchor in substantially a center of the supporting portion.
32 . An apparatus comprising:
a micromechanical system including a semiconductor body, the semiconductor body comprising:
a first dual-ring resonator, the first dual-ring resonator to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range;
a second dual-ring resonator, the second dual-ring resonator to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range; and
a supporting portion, the supporting portion to support both the first dual-ring resonator and the second dual-ring resonator, the supporting portion comprising a generally rectangular body having at least one bend to provide a differential orientation angle between the first dual-ring resonator and the second dual-ring resonator.
33 . The apparatus of claim 32 , wherein:
respective ones of one or more resonating portions of the first dual-ring resonator have a first shape and a first size;
respective ones of one or more resonating portions of the second dual-ring resonator have a second shape and a second size;
the second shape is substantially the same as the first shape;
the second size is substantially the same as the first size; and
the first dual-ring resonator and the second dual-ring resonator are substantially symmetric about a lateral axis of the semiconductor body.
34 . The apparatus of claim 33 , wherein:
the first dual-ring resonator resonates at the first resonating frequency to exhibit a first acoustic wave propagation in a first direction;
the second dual-ring resonator resonates at the second resonating frequency to exhibit a second acoustic wave propagation in a second direction; and
the first direction and the second direction are non-parallel.
35 . The apparatus of claim 32 , wherein the first dual-ring resonator includes first and second rings, the second dual-ring resonator includes first and second rings, and the supporting portion includes a first connecting portion to the first dual-ring resonator and a second connecting portion to the second resonator, the first connecting portion surrounding about twenty-five (25) percent or more of respective portions of respective perimeters of the first and the second rings of the first dual-ring resonator, the second connecting portion surrounding about twenty-five (25) percent or more of respective portions of respective perimeters of the first and the second rings of the second resonator.