Methods and systems for forming a layer comprising a group 13 element on a substrate
Disclosed are methods and systems for depositing layers comprising a Group 13 element on a surface of a substrate via contacting the substrate with at least a vapor-phase first precursor and a vapor-phase second precursor comprising an alkyl halide. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, and metal-insulator-metal (MIM).
1 . A method of forming a layer comprising a Group 13 element on a substrate, the method comprising:
providing the substrate in a reaction chamber;
executing at least one deposition cycle; wherein the at least one deposition cycle comprises:
contacting the substrate with a vapor-phase first precursor to chemisorb the first precursor to the substrate, wherein the vapor-phase first precursor comprises a compound comprising a Group 13 element and three alkyl ligands bonded to the Group 13 element; and
contacting the substrate with a vapor-phase second precursor comprising an alkyl halide to react the alkyl halide with the chemisorbed first precursor to form the layer on the substrate, wherein a halogen of the alkyl halide is bonded to a secondary or tertiary carbon atom.
2 . The method according to claim 1 , wherein each of the alkyl ligands bonded to the Group 13 element comprises a C1-C6 alkyl ligand.
3 . The method according to claim 1 , wherein the Group 13 element is selected from the group consisting of aluminum, gallium, indium, boron, and combinations thereof.
4 . The method according to claim 1 , wherein the vapor-phase first precursor comprises trimethylaluminum, trimethylindium, or trimethylgallium.
5 . The method according to claim 1 , wherein the vapor-phase first precursor comprises a monomer, dimer, or mixture of a monomer and a dimer of the compound comprising a Group 13 element and three alkyl ligands bonded to the Group 13 element.
6 . The method according to claim 1 , wherein the halogen of the alkyl halide comprises a member selected from the group consisting of I, Br, and Cl.
7 . The method according to claim 1 , wherein the alkyl halide comprises the formula C a H b X c , wherein a=3-8 and b+c=2a+2.
8 . The method according to claim 1 wherein the alkyl halide comprises tert-butyl iodide.
9 . The method according to claim 1 , wherein the alkyl halide comprises a branched C4 to C8 alkyl bonded to a halogen atom through a tertiary carbon atom.
10 . The method according to claim 1 , wherein the alkyl halide comprises two or more halogen atoms.
11 . The method according to claim 1 , wherein an alkyl of the alkyl halide comprises a β-carbon relative to an α-carbon bonded to a halogen, and wherein the β-carbon comprises at least one C—H bond.
12 . The method according to claim 1 , wherein the layer comprises at least two different Group 13 elements.
13 . The method according to claim 1 , wherein the at least one deposition cycle further comprises contacting the substrate with a vapor-phase third precursor to provide a second metal to the layer.
14 . The method according to claim 13 , wherein the vapor-phase third precursor comprises a compound comprising a Group 13 element different from that of the vapor-phase first precursor or comprises a transition metal.
15 . The method according to claim 1 , wherein the layer on the substrate comprises TiAlC.
16 . The method according to claim 1 , wherein the method comprises a cyclic deposition process, and wherein the method comprises repeating said at least one deposition cycle a plurality of times to form the layer on the substrate.
17 . A method of forming a layer comprising a Group 13 element on a substrate, the method comprising:
providing the substrate in a reaction chamber;
executing at least one deposition cycle; wherein the at least one deposition cycle comprises:
contacting the substrate with a vapor-phase first precursor to chemisorb the first precursor to the substrate, wherein the vapor-phase first precursor comprises a compound comprising a Group 13 element and three alkyl ligands bonded to the Group 13 element; and
contacting the substrate with a vapor-phase second precursor comprising an alkyl halide to react the alkyl halide with the chemisorbed first precursor to form the layer on the substrate,
wherein the vapor-phase first precursor comprises a monomer, dimer, or mixture of a monomer and a dimer of the compound comprising a Group 13 element and three alkyl ligands bonded to the Group 13 element.
18 . The method according to claim 17 , wherein an alkyl of the alkyl halide comprises a β-carbon relative to an α-carbon bonded to a halogen, and wherein the β-carbon comprises at least one C—H bond.
19 . A method of forming a layer comprising a Group 13 element on a substrate, the method comprising:
providing the substrate in a reaction chamber;
executing at least one deposition cycle; wherein the at least one deposition cycle comprises:
contacting the substrate with a vapor-phase first precursor to chemisorb the first precursor to the substrate, wherein the vapor-phase first precursor comprises a compound comprising a Group 13 element and three alkyl ligands bonded to the Group 13 element; and
contacting the substrate with a vapor-phase second precursor comprising an alkyl halide to react the alkyl halide with the chemisorbed first precursor to form the layer on the substrate, wherein the alkyl halide comprises a member selected from the group consisting of tert-butyl iodide, diiodoethane, iodoethane, triiodoethane, tetraiodoethane, and 1,3-diiodopropane.
20 . The method according to claim 19 , wherein each of the alkyl ligands bonded to the Group 13 element comprises a C1-C6 alkyl ligand.
21 . The method according to claim 19 , wherein the Group 13 element is selected from the group consisting of aluminum, gallium, indium, boron, and combinations thereof.
22 . The method according to claim 19 , wherein the vapor-phase first precursor comprises trimethylaluminum, trimethylindium, or trimethylgallium.