Device for manufacturing a semiconductor device and method for manufacturing a semiconductor device using the same
A device for manufacturing a semiconductor device is provided. The device for manufacturing a semiconductor device includes a tube extending in a first direction, and defining a reaction space therein and configured to accommodate a boat that is configured to receive a plurality of substrates therein, and first and second nozzles each extending in the first direction inside the tube, and being apart from each other on a plane that is perpendicular to the first direction and parallel to upper surfaces of the substrates, wherein the first and second nozzles include a plurality of first injection ports and a plurality of first second injection ports that are configured inject different gases toward a center of the reaction space, respectively, and a plurality of second injection ports are placed in a region between a corresponding pair of adjacent ones of the plurality of first injection ports along the first direction.
1 . A device for manufacturing a semiconductor device comprising:
a tube extending in a first direction, the tube defining a reaction space therein and configured to accommodate a boat that is configured to receive a plurality of substrates therein; and
first and second nozzles each extending in the first direction inside the tube, the first and second nozzles being apart from each other on a horizontal plane that is perpendicular to the first direction and parallel to upper surfaces of the plurality of substrates,
wherein the first nozzle includes a plurality of first injection ports and the second nozzle includes a plurality of second injection ports, the plurality of first injection ports and the plurality of second injection ports configured to inject a first gas and a second gas different from the first gas toward a center of the reaction space, respectively, and
wherein the reaction space includes a plurality of regions along the first direction, and the plurality of second injection ports are in a first region, among the plurality of regions, between two adjacent first injection ports of the plurality of first injection ports.
2 . The device for manufacturing the semiconductor device of claim 1 , wherein
the plurality of first injection ports include a first_ 1 injection port and a first_ 2 injection port adjacent to the first_ 1 injection port, the first_ 1 injection port and the first_ 2 injection port being apart from each other in the first direction to form the first region therebetween in the reaction space, and
the plurality of second injection ports include a second_ 1 injection port and a second_ 2 injection port adjacent to the second_ 1 injection port, the second_ 1 injection port and the second_ 2 injection port being apart from each other in the first direction, and the second_ 1 injection port and the second_ 2 injection port being between the first_ 1 injection port and the first_ 2 injection port.
3 . The device for manufacturing the semiconductor device of claim 2 , wherein the first_ 1 injection port includes a first injection sub-port and a second injection sub-port, and an interval between the first injection sub-port and the second injection sub-port is 5 mm to 10 mm.
4 . The device for manufacturing the semiconductor device of claim 1 , wherein an interval between an adjacent pair of the plurality of first injection ports is greater than an interval between an adjacent pair of the plurality of second injection ports.
5 . The device for manufacturing the semiconductor device of claim 1 , wherein a size of a diameter of each of the plurality of first injection ports is smaller than a size of a diameter of each of the plurality of second injection ports.
6 . The device for manufacturing the semiconductor device of claim 1 , wherein the plurality of first injection ports protrude to be parallel to the upper surfaces of the plurality of substrates.
7 . The device for manufacturing the semiconductor device of claim 2 , further comprising:
a third nozzle extending in the first direction, the third nozzle being apart from the first and second nozzles on the horizontal plane,
wherein the third nozzle includes a plurality of third injection ports configured to inject a third gas that is different from the first gas toward the center of the reaction space.
8 . The device for manufacturing the semiconductor device of claim 7 , wherein
the plurality of first injection ports further include a first_ 3 injection port, the first_ 3 injection port and the first_ 2 injection port defining a second region therebetween, the second region being apart from the first region in the first direction, and
the plurality of third injection ports include a third_ 1 injection port and a third_ 2 injection port adjacent to the third_ 1 injection port inside the second region.
9 . The device for manufacturing the semiconductor device of claim 7 , wherein a length of the third nozzle extending in the first direction is different from a length of the second nozzle extending in the first direction.
10 . The device for manufacturing the semiconductor device of claim 1 , wherein
the plurality of first injection ports are configured to inject an inert gas, and
the plurality of second injection ports are configured to inject a reaction gas.
11 . The device for manufacturing the semiconductor device of claim 1 , further comprising:
a plurality of temperature sensors, each of the plurality of temperature sensors configured to sense temperatures of regions defined by a corresponding one of respective pairs of the plurality of first injection ports; and
a temperature controller configured to control the temperatures of the regions between the plurality of first injection ports,
wherein the temperature controller is configured to individually control the temperatures of the regions.
12 . The device for manufacturing the semiconductor device of claim 1 , further comprising:
an exhaust configured to exhausts remaining gases in the reaction space to an outside through an exhaust slit defined in the tube,
wherein the exhaust slit and the plurality of first injection ports do not correspond to each other.