IP Library › Granted Patent US 12,635,118
Granted Patent B2
US 12,635,118 · App. 18/885,655 · Granted May 19, 2026

EMF shield

Inventor: Ben Salem (Woodland Hills, CA)
Assignee: SWITCH PROJECT LLC
H05K9/0088
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Quick Facts
Patent No.
US 12,635,118
App. No.
18/885,655
Granted
May 19, 2026
Kind
B2
Abstract

An EMF shield is disclosed. The EMF shield includes a scattering layer and a reflective layer having an exterior surface and an interior surface opposite the exterior surface. The scattering layer includes a metal coating disposed at the exterior surface. The reflective layer includes a first side and a second side opposite the first side, the first side of the reflective layer being coupled to the interior surface of the scattering layer, wherein the reflective layer comprises a dielectric material. The metal coating includes an adhesive coating for coupling to an electronic device. The EMF shield is configured to scatter and reflect the EMF signal. After the EMF signal is initially scattered by the metal coating, the reflective layer causes the EMF signal to reflect.

Claims (26)

1 . An EMF shield configured to interact with an EMF signal, comprising:

a scattering layer having an exterior surface and an interior surface opposite the exterior surface, the scattering layer further comprising a metal layer comprising each portion of the scattering layer, wherein the metal layer comprises a thickness between and inclusive of 5-30 nm; and

an insulator layer having a first side and a second side opposite the first side, the first side of the insulator layer coupled to the interior surface of the scattering layer to form a reflective boundary, wherein the reflective boundary is configured to reflect the EMF signal, the insulator layer comprising an impedance greater than the scattering layer;

an adhesive coating disposed on the exterior side;

wherein the scattering layer is configured to scatter and disperse a portion of the EMF signal and further configured to transmit another portion of the EMF signal through the scattering layer, and further wherein the scattering layer is configured to attach to an electronic device such that the scattering layer is configured to be disposed between the insulator layer and the electronic device.

2 . The EMF shield of claim 1 , wherein the scattering layer is characterized as opaque and is configured to block visible light.

3 . The EMF shield of claim 1 , the metal layer further comprising a holographic pattern.

4 . An EMF shield configured to interact with an EMF signal, comprising:

a scattering layer having an exterior surface and an interior surface opposite the exterior surface, the exterior side configured to attach to an electronic device, the scattering layer further comprising a metal layer; and

an insulator layer having a first side and a second side opposite the first side, the first side of the insulator layer coupled to the interior surface of the scattering layer to form a reflective boundary, wherein the reflective boundary is configured to reflect the EMF signal.

5 . The EMF shield of claim 4 , wherein the scattering layer is configured to scatter and disperse a portion of the EMF signal and further configured to transmit another portion of the EMF signal through the scattering layer.

6 . The EMF shield of claim 4 , wherein the metal layer is disposed at the exterior surface of the scattering layer.

7 . The EMF shield of claim 4 , the metal layer further comprising a holographic pattern.

8 . The EMF shield of claim 4 , the metal layer further comprising aluminum.

9 . The EMF shield of claim 4 , wherein each portion of the scattering layer comprises the metal layer.

10 . The EMF shield of claim 4 , wherein the metal layer comprises a thickness between and inclusive of 5-30 nm.

11 . The EMF shield of claim 4 , wherein the scattering layer comprises a thickness between and inclusive of 5-30 nm.

12 . The EMF shield of claim 4 , the scattering layer further comprising a secondary insulator coupled to the second side thereby forming a dielectric boundary therebetween.

13 . The EMF shield of claim 4 , wherein the EMF shield comprises metallized polyethylene terephthalate.

14 . The EMF shield of claim 4 , further comprising a protective layer coupled to the second side of the insulator layer, wherein the protective layer comprises a thermoplastic polymer.

15 . The EMF shield of claim 4 , wherein the scattering layer and the insulator layer are each devoid of EMF-absorbing material.

16 . The EMF shield of claim 4 , the scattering layer further comprising adhesive coating disposed on the exterior side.

17 . The EMF shield of claim 4 , wherein the EMF shield is coupled to an electronic device such that the scattering layer is disposed between the electronic device and the reflective boundary.

18 . The EMF shield of claim 4 , the insulator layer further comprising a dielectric material.

19 . The EMF shield of claim 4 , wherein the insulator layer comprises an impedance greater than the scattering layer.

20 . The EMF shield of claim 4 , wherein the scattering layer is characterized as opaque and is configured to block visible light.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2026
From: SALEM, BEN
To: SWITCH PROJECT LLC
Reel/Frame 074343/0743 →
Continuity (4)
Continuation 18701347
Provisional Application 63256559 · Oct 16, 2021
Provisional Application 63256350 · Oct 15, 2021
Related Publication 20250008716A1 · Jan 2, 2025
References Cited (6)
US 6768654B2 · Arnold · 2004 [cited by examiner]
US 7129422B2 · Arnold · 2006 [cited by examiner]
US 10596780B2 · Seo · 2020 [cited by examiner]
US 20140220335A1 · Lin · 2014 [cited by examiner]
US 20190339432A1 · Du · 2019 [cited by applicant]
US 20240314992A1 · Daghighian · 2024 [cited by examiner]