Display device and method for manufacturing the same
There is provided a display device including a base substrate, a conductive connection layer on the base substrate, a partitioning wall on the conductive connection layer, and a light emitting element on the conductive connection layer and in a space surrounded by the partitioning wall in a plan view, wherein the conductive connection layer includes a first portion overlapping the partitioning wall and the light emitting element, and a second portion not overlapping the partitioning wall and the light emitting element, an electrical conductivity of the first portion being greater than an electrical conductivity of the second portion.
1 . A display device comprising:
a base substrate;
a conductive connection layer on the base substrate;
a partitioning wall comprising stacked layers on the conductive connection layer;
a light emitting element comprising stacked layers comprising a first semiconductor layer, an electron-blocking layer, an active layer, a superlattice layer, and a second semiconductor layer on the conductive connection layer and in a space surrounded by the partitioning wall in a plan view, the stacked layers of the light emitting element respectively comprising a same material as, and at a same layer as, the stacked layers of the partitioning wall;
an insulating film on a side surface of the light emitting element;
a reflective film on the insulating film; and
a common electrode on the light emitting element and between the insulating film and the reflective film,
wherein the conductive connection layer comprises a first portion overlapping the partitioning wall and the light emitting element, and a second portion not overlapping the partitioning wall and the light emitting element, an electrical conductivity of the first portion being greater than an electrical conductivity of the second portion, and
wherein the common electrode is in direct contact with the second portion of the conductive connection layer.
2 . The display device of claim 1 , further comprising a pixel electrode between the base substrate and the light emitting element, and overlapping the first portion of the conductive connection layer,
wherein the light emitting element is between the pixel electrode and the common electrode.
3 . The display device of claim 1 , wherein the common electrode is in direct contact with a side of the partitioning wall.
4 . The display device of claim 1 , wherein the first portion of the conductive connection layer overlapping the light emitting element is surrounded by the second portion of the conductive connection layer in a plan view.
5 . The display device of claim 4 , wherein the second portion of the conductive connection layer is surrounded by the first portion of the conductive connection layer overlapping the partitioning wall.
6 . The display device of claim 5 , wherein the first portion of the conductive connection layer comprises mutually-spaced first portions respectively overlapping light emitting elements,
wherein the second portion of the conductive connection layer comprises mutually-spaced second portions, and
wherein the first portion of the conductive connection layer overlapping partitioning walls is continuous.
7 . The display device of claim 1 , wherein the conductive connection layer comprises indium tin oxide (ITO).
8 . The display device of claim 1 , wherein an oxygen content of the first portion of the conductive connection layer is lower than an oxygen content of the second portion of the conductive connection layer.
9 . The display device of claim 1 , wherein a surface roughness of the first portion of the conductive connection layer is greater than a surface roughness of the second portion of the conductive connection layer.
10 . The display device of claim 1 , wherein the first portion of the conductive connection layer is conductive, while the second portion of the conductive connection layer is non-conductive.
11 . The display device of claim 1 , further comprising a wavelength conversion layer on the light emitting element, and filling a space surrounded by the partitioning wall.
12 . The display device of claim 1 , wherein the stacked layers of the partitioning wall comprises a sub-partitioning wall comprising a same material as the second semiconductor layer of the stacked layers of the light emitting element, and
wherein a thickness of the sub-partitioning wall is greater than a thickness of the second semiconductor layer.
13 . A display device comprising:
a base substrate;
a conductive connection layer on the base substrate, and comprising a first portion, and a second portion surrounding the first portion in a plan view, and having an electrical resistance that is higher than the first portion;
a partitioning wall comprising stacked layers on the conductive connection layer;
a light emitting element comprising stacked layers comprising a first semiconductor layer, an electron-blocking layer, an active layer, a superlattice layer, and a second semiconductor layer on the first portion of the conductive connection layer, the stacked layers of the light emitting element respectively comprising a same material as, and at a same layer as, the stacked layers of the partitioning wall;
an insulating film on a side surface of the light emitting element;
a reflective film on the insulating film; and
a common electrode on the light emitting element and between the insulating film and the reflective film,
wherein the common electrode is in direct contact with the second portion of the conductive connection layer.
14 . The display device of claim 13 , further comprising a pixel electrode between the base substrate and the light emitting element, and overlapping the first portion of the conductive connection layer,
wherein the light emitting element is between the pixel electrode and the common electrode.
15 . The display device of claim 13 , wherein the conductive connection layer comprises indium tin oxide (ITO).
16 . The display device of claim 13 , wherein an oxygen content of the first portion of the conductive connection layer is lower than an oxygen content of the second portion of the conductive connection layer.
17 . The display device of claim 13 , wherein a surface roughness of the first portion of the conductive connection layer is greater than a surface roughness of the second portion of the conductive connection layer.
18 . The display device of claim 13 , wherein the stacked layers of the partitioning wall comprises a sub-partitioning wall comprising a same material as the second semiconductor layer of the stacked layers of the light emitting element, and
wherein a thickness of the sub-partitioning wall is greater than a thickness of the second semiconductor layer.