Granted Patent B2

US 12,638,784 · App. 18/504,147 · Granted May 26, 2026

Inventors: Hung-Chih Hsieh (Miaoli County, TW); Yen-Liang Chen (Zhubei City, TW)

Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

G03F7/70633

Abstract

Claims (50)

1 . A system for determining an overlay error, comprising:

a main controller;

a reference pattern module;

an analyzer module coupled to the main controller, wherein the analyzer module is configured to receive a first reference pattern and a second reference pattern;

a layout generator coupled to the main controller and configured to generate the first and the second reference patterns in the reference pattern module;

a stage configured to support a substrate;

a stage controller coupled to the main controller and configured to control movement of the stage; and

an optical system comprising:

one or more light sources and coupled to the main controller, the one or more light sources configured to generate a first beam of light to radiate the first reference pattern of the reference pattern module and to radiate a first overlay measurement pattern in the substrate and to generate a second beam of light to radiate the second reference pattern of the reference pattern module and to radiate a second overlay measurement pattern of the substrate; and

one or more light detectors configured to receive a first combination of diffracted light from the first overlay measurement pattern and the first reference pattern and to receive a second combination of diffracted light from the second overlay measurement pattern and the second reference pattern;

wherein the analyzer module is further configured to receive detected signals associated with the first combination of diffracted light to determine a first overlay error between the first reference pattern of the reference pattern module and the first overlay measurement pattern of the substrate and to receive detected signals associated with the second combination of diffracted light to determine a second overlay error between the second reference pattern of the reference pattern module and the second overlay measurement pattern of the substrate.

2 . The system of claim 1 , wherein the first overlay measurement pattern is included in a first layout pattern that is in a first layer of the substrate and the second overlay measurement pattern is included in a second layout pattern that is in a second layer of the substrate different from the first layer.

3 . The system of claim 1 , wherein the reference pattern module is disposed in parallel with the substrate.

4 . The system of claim 1 , wherein a layout position controller is coupled to the reference pattern module and is configured to move the reference pattern module.

5 . The system of claim 1 , further comprising a beam splitter configured to receive the first beam of light and to split the first beam of light such that a first portion of the first beam of light radiates the first overlay measurement pattern at a first location of the substrate and a remaining second portion of the first beam of light radiates the first reference pattern of the reference pattern module.

6 . The system of claim 5 , wherein the beam splitter is further configured to receive the second beam of light and to split the second beam of light such that a first portion of the second beam of light radiates the second overlay measurement pattern at a second location of the substrate and a remaining second portion of the second beam of light radiates the second reference pattern of the reference pattern module.

7 . The system of claim 6 , wherein the stage controller and a layout position controller are configured to move the substrate and the reference pattern module such that the first and the remaining second portions of the first beam of light simultaneously radiate the first overlay measurement pattern and the first reference pattern and the first and the remaining second portions of the second beam of light simultaneously radiate the second overlay measurement pattern and the second reference pattern.

8 . The system of claim 1 , wherein the one or more light sources are coherent light sources.

9 . A system for determining an overlay error, comprising:

a processor coupled to an analyzer module;

a reference pattern module comprising a first reference pattern and a separate second reference pattern;

an optical system comprising:

one or more light sources and configured to generate a first beam of light to radiate the first reference pattern of the reference pattern module and to radiate a first overlay measurement pattern disposed in a substrate and to generate a second beam of light to radiate the second reference pattern of the reference pattern module and to radiate a second overlay measurement pattern disposed in the substrate; and

one or more light detectors, the one or more light detectors configured to receive a first combination of diffracted light from the first overlay measurement pattern and the first reference pattern and to receive a second combination of diffracted light from the second overlay measurement pattern and the second reference pattern; and

the analyzer module is configured to receive detected signals associated with the first combination of diffracted light to determine a first overlay error between the first reference pattern of the reference pattern module and the first overlay measurement pattern of the substrate, to receive detected signals associated with the second combination of diffracted light to determine a second overlay error between the second reference pattern of the reference pattern module and the second overlay measurement pattern of the substrate, and to determine a total overlay error between the first and second overlay measurement patterns in the substrate based on the first and second overlay errors.

10 . The system of claim 9 , wherein the first overlay measurement pattern is included in a first layout pattern that is in a first layer of the substrate and the second overlay measurement pattern is included in a second layout pattern that is in a second layer of the substrate different from the first layer.

11 . The system of claim 9 , wherein the first reference pattern overlaps partially with the first overlay measurement pattern and the second reference pattern overlaps partially with the second overlay measurement pattern.

12 . The system of claim 9 , wherein the first reference pattern has a first pitch equal to a pitch of the first overlay measurement pattern of the substrate, and wherein the second reference pattern has a second pitch equal to a pitch of the second overlay measurement pattern of the substrate.

13 . The system of claim 9 , wherein:

the first reference pattern of the reference pattern module comprises a first plurality of third sub-patterns extending in a first direction and being arranged in a second direction crossing the first direction, and a second plurality of third sub-patterns extending in the first direction and arranged in the second direction, wherein the first plurality of third sub-patterns and the second plurality of third sub-patterns are arranged with an equal distance D3 at opposite sides of a third central line extending in the first direction; and

the first overlay measurement pattern of the substrate comprises a third plurality of first sub-patterns extending in the first direction and arranged in the second direction crossing the first direction, and a fourth plurality of first sub-patterns extending in the first direction and arranged in the second direction, wherein the third plurality of first sub-patterns and the fourth plurality of first sub-patterns are arranged with an equal distance D1 at opposite sides of a first central line extending in the first direction, wherein when the first reference pattern of the reference pattern module is disposed over the first overlay measurement pattern of the substrate and the first central line and the third central line overlap, the first plurality of third sub-patterns of the first reference pattern of the reference pattern module has an offset d=D1−D3 with the third plurality of first sub-patterns of the first overlay measurement pattern of the substrate and the second plurality of third sub-patterns of the first reference pattern of the reference pattern module has an offset −d=D3−D1 with the fourth plurality of first sub-patterns of the first overlay measurement pattern of the substrate.

14 . The system of claim 9 , wherein the reference pattern module is disposed in parallel with the substrate.

15 . The system of claim 9 , wherein a layout position controller is coupled to the reference pattern module and is configured to move the reference pattern module.

16 . A system for determining an overlay error, comprising:

a controller;

a reference pattern module coupled to the controller, comprising a first reference pattern and a spaced-apart second reference pattern; and

an analyzer module coupled to the controller, configured to:

determine a first overlay error between the first reference pattern of the reference pattern module and a first overlay measurement pattern in a substrate,

determine a second overlay error between the second reference pattern of the reference pattern module and a second overlay measurement pattern in the substrate, and

determine a total overlay error between the first and second overlay measurement patterns in the substrate based on the first and second overlay errors.

17 . The system of claim 16 , wherein the reference pattern module is disposed in parallel over the substrate.

18 . The system of claim 16 , wherein the reference pattern module is disposed perpendicular to the substrate and the system further comprises an optical system coupled to the analyzer module and a beam splitter,

wherein the beam splitter is configured to:

direct a first portion of a beam of light to the first reference pattern of the reference pattern module and direct a remaining second portion of the beam of light to a first location of a first layer of the substrate;

combine diffracted light received from the first reference pattern of the reference pattern module and received from the first overlay measurement pattern in the first location of the substrate to generate a first combination of diffracted light;

direct the first combination of diffracted light received from the first overlay measurement pattern and received from the first reference pattern to the optical system for detection; and

direct a detected signal of the optical system to the analyzer module.

19 . The system of claim 18 , wherein the analyzer module is configured to:

analyze positive and negative first order diffractions of the first combination of diffracted light to determine the first overlay error.

20 . The system of claim 18 , further comprising a coherent light source configured to provide the beam of light.

Assignments (1)

Continuity (4)

References Cited (41)