Radio-frequency module and communication device
A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, and a first radio-frequency component, wherein a pass band width of the hybrid filter is greater than a resonant band width of the first acoustic wave resonator, one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the main surface, and the first radio-frequency component is disposed on the main surface.
1 . A radio-frequency module, comprising:
a substrate having a first main surface and a second main surface opposite to each other;
a first hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor; and
a first radio-frequency circuitry,
wherein a pass band width of the first hybrid filter is greater than a resonant band width of the first acoustic wave resonator,
one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the first main surface, and
the first radio-frequency circuitry is disposed on the second main surface,
wherein the first radio-frequency circuitry is a first low-noise amplifier,
the radio-frequency module further includes an external connection terminal disposed on the second main surface,
a first power amplifier,
a first switch connected to the first hybrid filter for switching between connection and disconnection between the first hybrid filter and an antenna connection terminal, and
a second switch connected to the first hybrid filter, the first low-noise amplifier, and the first power amplifier for switching between connection between the first hybrid filter and the first low-noise amplifier and connection between the first hybrid filter and the first power amplifier,
the first hybrid filter is a transmission-and-reception filter connected to the first low-noise amplifier and the first power amplifier, and
in a plan view of the substrate, the first hybrid filter and the first switch at least partially overlap each other.
2 . The radio-frequency module according to claim 1 ,
wherein the first acoustic wave resonator is disposed either on the first main surface or inside the substrate, the first inductor is disposed either on the first main surface or inside the substrate, and the first capacitor is disposed either on the first main surface or inside the substrate.
3 . The radio-frequency module according to claim 1 , further comprising:
a second hybrid filter having a second acoustic wave resonator, a second inductor, and a second capacitor; and
a second low-noise amplifier disposed on the second main surface,
wherein a pass band width of the second hybrid filter is greater than a resonant band width of the second acoustic wave resonator,
one of the second acoustic wave resonator, the second inductor, and the second capacitor is disposed on the first main surface,
the second hybrid filter is a reception-only filter connected between the first switch and the second low-noise amplifier, and
in the plan view of the substrate, the second hybrid filter and the second low-noise amplifier at least partially overlap each other.
4 . The radio-frequency module according to claim 3 ,
wherein the first low-noise amplifier, the second low-noise amplifier, and the first switch are included in a semiconductor integrated circuit (IC) disposed on the second main surface.
5 . The radio-frequency module according to claim 3 , further comprising:
a third inductor connected between an output terminal of the first power amplifier and the first hybrid filter,
wherein a distance between the third inductor and the first hybrid filter is shorter than a distance between the third inductor and the second hybrid filter.
6 . The radio-frequency module according to claim 5 ,
wherein the first acoustic wave resonator, the first inductor, and the first capacitor are disposed on the first main surface,
the second acoustic wave resonator, the second inductor, and the second capacitor are disposed on the first main surface, and
in a case that, in the plan view of the substrate, (1) a first quadrant which is a region on a right side and an upper side of a reference point on the substrate, (2) a second quadrant which is a region on a left side and the upper side of the reference point, (3) a third quadrant which is a region on the left side and a lower side of the reference point, and (4) a fourth quadrant which is a region on the right side and the lower side of the reference point are defined,
at least a part of the second hybrid filter is disposed in the first quadrant,
at least a part of the first power amplifier is disposed in the second quadrant,
at least a part of the third inductor is disposed in the third quadrant, and
at least a part of the first hybrid filter is disposed in the fourth quadrant.
7 . The radio-frequency module according to claim 3 , further comprising:
a first filter having a third acoustic wave resonator and a fourth inductor; and
a second filter having a fourth acoustic wave resonator and a fifth inductor,
wherein the first filter is a transmission-and-reception filter connected to the first switch,
the second filter is a reception-only filter connected to the first switch,
a pass band of each of the first hybrid filter and the second hybrid filter includes n77 of 5G-NR, and
a pass band of each of the first filter and the second filter includes n79 of 5G-NR.
8 . A radio-frequency module, comprising:
a substrate having a first main surface and a second main surface opposite to each other;
a first hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor; and
a first radio-frequency circuitry,
wherein a pass band width of the first hybrid filter is greater than a resonant band width of the first acoustic wave resonator,
one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the first main surface, and
the first radio-frequency circuitry is disposed on the second main surface,
wherein the first radio-frequency circuitry is a third low-noise amplifier,
the radio-frequency module further includes an external connection terminal disposed on the second main surface,
the first hybrid filter is a reception-only filter connected to the third low-noise amplifier, and
in a plan view of the substrate, the first hybrid filter and the third low-noise amplifier at least partially overlap each other.
9 . A communication device, comprising:
a radio-frequency (RF) signal processing circuit configured to process a radio-frequency signal received by an antenna; and
a radio-frequency module configured to propagate the radio-frequency signal between the antenna and the RF signal processing circuit,
wherein the radio-frequency module includes
a substrate having a first main surface and a second main surface opposite to each other;
a first hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, and
a first radio-frequency circuitry,
wherein a pass band width of the first hybrid filter is greater than a resonant band width of the first acoustic wave resonator,
one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the first main surface, and
the first radio-frequency circuitry is disposed on the second main surface,
wherein the first radio-frequency circuitry is a first low-noise amplifier,
the radio-frequency module further includes
an external connection terminal disposed on the second main surface,
a first power amplifier,
a first switch connected to the first hybrid filter for switching between connection and disconnection between the first hybrid filter and an antenna connection terminal, and
a second switch connected to the first hybrid filter, the first low-noise amplifier, and the first power amplifier for switching between connection between the first hybrid filter and the first low-noise amplifier and connection between the first hybrid filter and the first power amplifier,
the first hybrid filter is a transmission-and-reception filter connected to the first low-noise amplifier and the first power amplifier, and
in a plan view of the substrate, the first hybrid filter and the first switch at least partially overlap each other.
10 . The communication device according to claim 9 ,
wherein the first acoustic wave resonator is disposed either on the first main surface or inside the substrate, the first inductor is disposed either on the first main surface or inside the substrate, and the first capacitor is disposed either on the first main surface or inside the substrate.
11 . The communication device according to claim 9 ,
wherein the radio-frequency module further includes
a second hybrid filter having a second acoustic wave resonator, a second inductor, and a second capacitor; and
a second low-noise amplifier disposed on the second main surface,
wherein a pass band width of the second hybrid filter is greater than a resonant band width of the second acoustic wave resonator,
one of the second acoustic wave resonator, the second inductor, and the second capacitor is disposed on the first main surface,
the second hybrid filter is a reception-only filter connected between the first switch and the second low-noise amplifier, and
in the plan view of the substrate, the second hybrid filter and the second low-noise amplifier at least partially overlap each other.
12 . The communication device according to claim 11 ,
wherein the first low-noise amplifier, the second low-noise amplifier, and the first switch are included in a semiconductor integrated circuit (IC) disposed on the second main surface.
13 . The communication device according to claim 11 ,
wherein the radio-frequency module further includes
a third inductor connected between an output terminal of the first power amplifier and the first hybrid filter,
wherein a distance between the third inductor and the first hybrid filter is shorter than a distance between the third inductor and the second hybrid filter.
14 . The communication device according to claim 13 ,
wherein the first acoustic wave resonator, the first inductor, and the first capacitor are disposed on the first main surface,
the second acoustic wave resonator, the second inductor, and the second capacitor are disposed on the first main surface, and
in a case that, in the plan view of the substrate, (1) a first quadrant which is a region on a right side and an upper side of a reference point on the substrate, (2) a second quadrant which is a region on a left side and the upper side of the reference point, (3) a third quadrant which is a region on the left side and a lower side of the reference point, and (4) a fourth quadrant which is a region on the right side and the lower side of the reference point are defined,
at least a part of the second hybrid filter is disposed in the first quadrant,
at least a part of the first power amplifier is disposed in the second quadrant,
at least a part of the third inductor is disposed in the third quadrant, and
at least a part of the first hybrid filter is disposed in the fourth quadrant.
15 . The communication device according to claim 11 ,
wherein the radio-frequency module further includes
a first filter having a third acoustic wave resonator and a fourth inductor; and
a second filter having a fourth acoustic wave resonator and a fifth inductor,
wherein the first filter is a transmission-and-reception filter connected to the first switch,
the second filter is a reception-only filter connected to the first switch,
a pass band of each of the first hybrid filter and the second hybrid filter includes n77 of 5G-NR, and
a pass band of each of the first filter and the second filter includes n79 of 5G-NR.
16 . The communication device according to claim 9 ,
wherein the first radio-frequency circuitry is a third low-noise amplifier,
the radio-frequency module further includes
an external connection terminal disposed on the second main surface,
the first hybrid filter is a reception-only filter connected to the third low-noise amplifier, and
in a plan view of the substrate, the first hybrid filter and the third low-noise amplifier at least partially overlap each other.