Display device with improved aperture ratio and method of manufacturing the same
A display device includes a substrate, an insulating film formed over the substrate, a first pixel electrode formed over the insulating film, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode in a plan view, a second light-emitting layer formed in a recess provided in the insulating film, and a second pixel electrode overlapping the recess in a plan view. At least one of the first light-emitting layer and the second light-emitting layer includes a quantum dot as a light-emitting material.
1 . A display device comprising:
a substrate;
an insulating film formed over the substrate;
a first pixel electrode formed over the insulating film;
a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode in a plan view;
a second light-emitting layer formed in a recess provided in the insulating film;
a second pixel electrode overlapping the recess in the plan view;
a third pixel electrode formed over the insulating film or in another recess provided in the insulating film; and
a third light-emitting layer formed over the third pixel electrode, overlapping the third pixel electrode in the plan view, and configured to emit a color different from colors emitted by the first light-emitting layer and the second light-emitting layer,
wherein:
at least one of the first light-emitting layer or the second light-emitting layer includes a quantum dot as a light-emitting material, and
at least one of the first light-emitting layer or the third light-emitting layer is a resist layer.
2 . The display device according to claim 1 , wherein the insulating film covers an edge of the second pixel electrode.
3 . A display device comprising:
a substrate;
an insulating film formed over the substrate;
a first pixel electrode formed over the insulating film;
a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode in a plan view;
a second light-emitting layer formed in a recess provided in the insulating film; and
a second pixel electrode overlapping the recess in the plan view,
wherein:
at least one of the first light-emitting layer or the second light-emitting layer includes a quantum dot as a light-emitting material, and
a residue of a sacrificial layer for liftoff is included under a part of the first light-emitting layer.
4 . The display device according to claim 3 , wherein the second light-emitting layer is provided in common to a plurality of subpixels of an identical color.
5 . The display device according to claim 3 , wherein
the first light-emitting layer and the second light-emitting layer are linear in the plan view, and
the second light-emitting layer is wider than the first light-emitting layer.
6 . The display device according to claim 3 , wherein
the substrate includes a first transistor connected to the first pixel electrode, and a second transistor connected to the second pixel electrode, and
the first light-emitting layer further overlaps a semiconductor film of at least one of the first transistor or the second transistor in the plan view.
7 . The display device according to claim 3 , wherein the insulating film covers an edge of the second pixel electrode.
8 . The display device according to claim 3 , further comprising an edge cover film covering an edge of the first pixel electrode.
9 . The display device according to claim 3 , wherein the insulating film is removed in the recess.
10 . The display device according to claim 3 , wherein the insulating film is formed more thinly in the recess than in a surrounding region of the insulating film.
11 . The display device according to claim 3 , wherein the second light-emitting layer further comprises an ink-jet printed layer containing an ink-jet printing material.
12 . A display device comprising:
a substrate;
an insulating film formed over the substrate;
a first pixel electrode formed over the insulating film;
a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode in a plan view;
a second light-emitting layer formed in a recess provided in the insulating film; and
a second pixel electrode overlapping the recess in the plan view,
wherein:
at least one of the first light-emitting layer or the second light-emitting layer includes a quantum dot as a light-emitting material, and
the first light-emitting layer includes the quantum dot and a photosensitive ligand.
13 . The display device according to claim 12 , wherein
the substrate includes a first transistor connected to the first pixel electrode, and a second transistor connected to the second pixel electrode, and
the first light-emitting layer further overlaps a semiconductor film of at least one of the first transistor or the second transistor in the plan view.
14 . The display device according to claim 12 , wherein the insulating film covers an edge of the second pixel electrode.
15 . The display device according to claim 12 , further comprising an edge cover film covering an edge of the first pixel electrode.
16 . The display device according to claim 12 , wherein the insulating film is removed in the recess.
17 . The display device according to claim 12 , wherein the insulating film is formed more thinly in the recess than in a surrounding region of the insulating film.
18 . The display device according to claim 12 , wherein the second light-emitting layer further comprises an ink-jet printed layer containing an ink-jet printing material.
19 . The display device according to claim 12 , wherein the second light-emitting layer is provided in common in a plurality of subpixels of an identical color.
20 . The display device according to claim 12 , wherein
the first light-emitting layer and the second light-emitting layer are linear in the plan view, and
the second light-emitting layer is wider than the first light-emitting layer.