Semiconductor device and method of forming high crystal quality magnetic layer for shielding of low frequency magnetic fields
A semiconductor device has a substrate and an electrical component disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A magnetic film material is formed over the encapsulant. The magnetic film material may extend down a side surface of the semiconductor device. The magnetic film material is subject to laser spike annealing in a magnetic field. A shielding layer is formed over the magnetic film material. The laser spike annealing of the magnetic film material in the magnetic field can be done after forming the shielding layer. The shielding layer may extend down a side surface of the semiconductor device. A first magnet is disposed on a first side of the semiconductor device. A second magnet is disposed on a second side of the semiconductor device opposite the first side of the semiconductor device.
1 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over the substrate;
depositing an encapsulant over the electrical component and substrate;
forming a magnetic film material over the encapsulant;
laser spike annealing the magnetic film material in a magnetic field; and
forming a shielding layer over the magnetic film material.
2 . The method of claim 1 , wherein the shielding layer extends down a side surface of the semiconductor device.
3 . The method of claim 1 , further including:
disposing a first magnet on a first side of the semiconductor device; and
disposing a second magnet on a second side of the semiconductor device opposite the first side of the semiconductor device, wherein the first magnet has a first pole and the second magnet has a second pole opposite the first pole.
4 . A method of making a semiconductor device, comprising:
providing a substrate;
forming a magnetic film material over the substrate;
laser spike annealing the magnetic film material in a magnetic field; and
forming a shielding layer over the magnetic film material.
5 . The method of claim 4 , further including:
disposing an electrical component over the substrate; and
depositing an encapsulant over the electrical component and substrate.
6 . The method of claim 4 , wherein the shielding layer extends down a side surface of the semiconductor device.
7 . The method of claim 4 , further including:
disposing a first magnet on a first side of the semiconductor device; and
disposing a second magnet on a second side of the semiconductor device opposite the first side of the semiconductor device, wherein the first magnet has a first pole and the second magnet has a second pole opposite the first pole.
8 . A semiconductor device, comprising:
a substrate;
an electrical component disposed over the substrate;
an encapsulant deposited over the electrical component and substrate;
a magnetic film material formed over the encapsulant, wherein the magnetic film material is laser spike annealed in a magnetic field; and
a shielding layer formed over the magnetic film material.
9 . The semiconductor device of claim 8 , wherein the shielding layer extends down a side surface of the semiconductor device.
10 . A semiconductor device, comprising:
a substrate;
an electrical component disposed over the substrate;
an encapsulant deposited over the electrical component and substrate;
a magnetic film material formed over the encapsulant, wherein the magnetic film material is laser spike annealed in a magnetic field;
a first magnet disposed on a first side of the semiconductor device; and
a second magnet disposed on a second side of the semiconductor device opposite the first side of the semiconductor device, wherein the first magnet has a first pole and the second magnet has a second pole opposite the first pole.
11 . A semiconductor device, comprising:
a substrate;
a magnetic film material formed over the substrate, wherein the magnetic film material is laser spike annealed in a magnetic field; and
a shielding layer formed over the magnetic film material.
12 . The semiconductor device of claim 11 , further including:
an electrical component disposed over the substrate; and
an encapsulant deposited over the electrical component and substrate.
13 . The semiconductor device of claim 11 , wherein the shielding layer extends down a side surface of the semiconductor device.
14 . A semiconductor device, comprising:
a substrate;
a magnetic film material formed over the substrate, wherein the magnetic film material is laser spike annealed in a magnetic field;
a first magnet disposed on a first side of the semiconductor device; and
a second magnet disposed on a second side of the semiconductor device opposite the first side of the semiconductor device, wherein the first magnet has a first pole and the second magnet has a second pole opposite the first pole.