IP Library Granted Patent US 12,643,833
Granted Patent B2
US 12,643,833 · App. 18/483,429 · Granted Jun 2, 2026

Ceramic infiltration of aircraft brakes via injection for wear improvement

Inventors: Jecee Jarman (Pueblo, CO); Christopher T. Kirkpatrick (Pueblo West, CO)
Assignee: GOODRICH CORPORATION
C04B41/457C04B41/0072C04B41/4515C04B41/4549C04B2111/00362C04B2235/616
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,643,833
App. No.
18/483,429
Granted
Jun 2, 2026
Kind
B2
Abstract

A method for infiltrating a wear liner is disclosed herein. The method includes infiltrating a ceramic solution into a carbon/carbon (C/C) substrate, drying the C/C substrate to produce oxide particulates within the C/C substrate, and densifying the C/C substrate, including heating the C/C substrate and oxide particulates to a first temperature, wherein heating the C/C substrate during the densifying avoids promoting a reaction between the oxide particulates and the C/C substrate.

Claims (29)

1 . A method, comprising:

infiltrating a ceramic solution into a carbon/carbon (C/C) substrate, the ceramic solution comprising doped nano ceramic binary oxide particulates and nano ceramic ternary oxide particulates, wherein the doped nano ceramic binary oxide particulates comprise at least one of yttrium oxide stabilized zirconium (IV) oxide (YSZ) or zirconium (IV) oxide toughened aluminum oxide (ZTA), and wherein the nano ceramic ternary oxide particulates comprise at least one of hafnium orthosilicate (HfSiO 4 ), aluminum titanate (Al 2 TiO 5 ), calcium titanate (CaTiO 3 ), strontium titanate (SrTiO 3 ), barium titanate (BaTiO 3 ), hafnium titanate (HfTiO 4 ), strontium zirconate (SrZrO 3 ), or barium zirconate (BaZrO 3 );

drying the C/C substrate to produce oxide particulates within the C/C substrate; and

densifying the C/C substrate, including heating the C/C substrate and oxide particulates to a first temperature, wherein heating the C/C substrate during the densifying avoids promoting a reaction between the oxide particulates and the C/C substrate.

2 . The method of claim 1 , wherein the C/C substrate is a C/C preform that is configured for use as a C/C disk or a C/C wear liner for a core-liner brake configuration after densifying the C/C substrate.

3 . The method of claim 1 , wherein infiltrating the ceramic solution into the C/C substrate comprises:

submerging the C/C substrate in a bath of the ceramic solution; and

applying a vacuum to vacuum infiltrate the ceramic solution to a core of the C/C substrate.

4 . The method of claim 1 , further comprising nano ceramic binary oxide particulates, wherein the nano ceramic binary oxide particulates comprise at least one of magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), calcium oxide (CaO), scandium (III) oxide (Sc 2 O 3 ), titanium oxide (TiO 2 ), gallium oxide (GaO), strontium oxide (SrO), yttrium oxide (Y 2 O 3 ), zirconium oxide (ZrO 2 ), hafnium (IV) oxide (HfO 2 ), tantalum oxide (Ta 2 O 5 ), lanthanum oxide (La 2 O 3 ), cerium dioxide (CeO 2 ), praseodymium (III,IV) oxide (Pr 6 O 11 ), neodymium oxide (Nd 2 O 3 ), samarium oxide (Sm 2 O 3 ), europium oxide (Eu 2 O 3 ), or gadolinium oxide (Gd 2 O 3 ).

5 . A method of infiltrating a ceramic solution into a carbon/carbon (C/C) substrate, comprising:

injecting, via a needle, the ceramic solution into the C/C substrate, wherein the needle penetrates a thickness of the C/C substrate, wherein the ceramic solution comprises at least one of doped nano ceramic binary oxide particulates or nano ceramic ternary oxide particulates, wherein the doped nano ceramic binary oxide particulates comprise at least one of yttrium oxide stabilized zirconium (IV) oxide (YSZ) or zirconium (IV) oxide toughened aluminum oxide (ZTA), and wherein the nano ceramic ternary oxide particulates comprise at least one of hafnium orthosilicate (HfSiO 4 ), aluminum titanate (Al 2 TiO 5 ), calcium titanate (CaTiO 3 ), strontium titanate (SrTiO 3 ), barium titanate (BaTiO 3 ), hafnium titanate (HfTiO 4 ), strontium zirconate (SrZrO 3 ), or barium zirconate (BaZrO 3 );

drying the C/C substrate to produce oxide particulates within the C/C substrate, wherein the injecting includes injecting the ceramic solution with a gradient through a depth of the C/C substrate; and

densifying the C/C substrate, including heating the C/C substrate and oxide particulates to a first temperature, wherein heating the C/C substrate during the densifying avoids promoting a reaction between the oxide particulates and the C/C substrate.

6 . The method of claim 5 , wherein the C/C substrate is a C/C preform that is configured for use as a C/C disk or a C/C wear liner for a core-liner brake configuration after densifying the C/C substrate, and wherein the drying the C/C substrate dries the ceramic solution to produce oxide particulates within the C/C substrate.

7 . The method of claim 5 ,

wherein the injecting includes the needle penetrating up to an entire thickness of the C/C substrate and injecting the ceramic solution up to the entire thickness of the C/C substrate.

8 . The method of claim 5 , wherein the injecting includes injecting the ceramic solution at discrete depths through a thickness of the C/C substrate, the discrete depths being distinct from each other.

9 . The method of claim 5 , wherein the C/C substrate is configured for a core-liner brake configuration after densifying the C/C substrate, and

wherein the gradient is through a depth of the C/C wear liner, the ceramic solution being more concentrated near a core of the C/C wear liner and less concentrated near a surface of the C/C wear liner.

10 . The method of claim 5 , wherein the C/C substrate is configured for a core-liner brake configuration after densifying the C/C substrate, and

wherein the injecting includes injection the ceramic solution into a plurality of localized regions of the wear liner, the plurality of localized regions spaced a circumferential distance from each other.

11 . The method of claim 5 , wherein the ceramic solution further comprises nano ceramic binary oxide particulates.

12 . A method of infiltrating a ceramic solution into a densified carbon/carbon (C/C) disk, comprising:

drilling a plurality of holes in a wear surface of the densified C/C disk;

applying the ceramic solution to the densified C/C disk, with the ceramic solution entering into the plurality of holes, wherein the ceramic solution comprises doped nano ceramic binary oxide particulates and nano ceramic ternary oxide particulates, wherein the doped nano ceramic binary oxide particulates comprise at least one of yttrium oxide stabilized zirconium (IV) oxide (YSZ) or zirconium (IV) oxide toughened aluminum oxide (ZTA), and wherein the nano ceramic ternary oxide particulates comprise at least one of hafnium orthosilicate (HfSiO 4 ), aluminum titanate (Al 2 TiO 5 ), calcium titanate (CaTiO 3 ), strontium titanate (SrTiO 3 ), barium titanate (BaTiO 3 ), hafnium titanate (HfTiO 4 ), strontium zirconate (SrZrO 3 ), or barium zirconate (BaZrO 3 ); and

drying the densified C/C disk.

13 . The method of claim 12 , wherein the ceramic solution further comprises nano ceramic binary oxide particulates, wherein the nano ceramic binary oxide particulates comprise at least one of magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), calcium oxide (CaO), scandium (III) oxide (Sc 2 O 3 ), titanium oxide (TiO 2 ), gallium oxide (GaO), strontium oxide (SrO), yttrium oxide (Y 2 O 3 ), zirconium oxide (ZrO 2 ), hafnium (IV) oxide (HfO 2 ), tantalum oxide (Ta 2 O 5 ), lanthanum oxide (La 2 O 3 ), cerium dioxide (CeO 2 ), praseodymium (III,IV) oxide (Pr 6 O 11 ), neodymium oxide (Nd 2 O 3 ), samarium oxide (Sm 2 O 3 ), europium oxide (Eu 2 O 3 ), or gadolinium oxide (Gd 2 O 3 ).

14 . The method of claim 12 , wherein the drilling includes drilling the plurality of holes to a core of the densified C/C disk.

15 . The method of claim 12 , wherein the applying the ceramic solution includes at least one of injecting the plurality of holes in the densified C/C disk with the ceramic solution, dunking the densified C/C disk in the ceramic solution, or vacuum infiltrating the densified C/C disk in the ceramic solution.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2023
From: JARMAN, JECEE; KIRKPATRICK, CHRISTOPHER T
To: GOODRICH CORPORATION
Reel/Frame 065163/0349 →
Continuity (1)
Related Publication 20250115524A1 · Apr 10, 2025
References Cited (70)
US 3871934A · Marin · 1975 [cited by applicant]
US 4180622A · Burkhard et al. · 1979 [cited by applicant]
US 5224572A · Smolen, Jr. et al. · 1993 [cited by applicant]
US 5629101A · Watremez · 1997 [cited by applicant]
US 5962135A · Walker et al. · 1999 [cited by applicant]
US 6857509B1 · Braiato et al. · 2005 [cited by applicant]
US 6969546B2 · DiChiara, Jr. · 2005 [cited by applicant]
US 7501181B2 · Walker et al. · 2009 [cited by applicant]
US 7900751B2 · Walker · 2011 [cited by applicant]
US 8084089B2 · Meckel · 2011 [cited by applicant]
US 8449943B2 · Meckel · 2013 [cited by applicant]
US 8871044B2 · Baud et al. · 2014 [cited by applicant]
US 8962083B2 · Murphy · 2015 [cited by applicant]
US 9272950B2 · Waghray et al. · 2016 [cited by applicant]
US 9296660B2 · Miyamoto et al. · 2016 [cited by applicant]
US 9970497B2 · Le Costaouec et al. · 2018 [cited by applicant]
US 10670099B2 · Yaguchi et al. · 2020 [cited by applicant]
US 10767059B2 · Poteet et al. · 2020 [cited by applicant]
US 11448274B2 · Kirkpatrick · 2022 [cited by applicant]
US 11530727B2 · Bouillon et al. · 2022 [cited by applicant]
US 11634213B2 · Poteet et al. · 2023 [cited by applicant]
US 20090130324A1 · Shanker et al. · 2009 [cited by applicant]
US 20100291373A1 · Baud et al. · 2010 [cited by applicant]
US 20120118685A1 · Johnson et al. · 2012 [cited by applicant]
US 20130116109A1 · Ritti · 2013 [cited by examiner]
US 20130337180A1 · Jacquemard · 2013 [cited by examiner]
US 20140054810A1 · Cho · 2014 [cited by applicant]
US 20150354936A1 · Thomas et al. · 2015 [cited by applicant]
US 20190092698A1 · Kirkpatrick · 2019 [cited by examiner]
US 20200200227A1 · Linck · 2020 [cited by examiner]
US 20210362368A1 · Diss · 2021 [cited by examiner]
US 20230150884A1 · Khan · 2023 [cited by applicant]
US 20250075759A1 · Jarman et al. · 2025 [cited by applicant]
US 20250102032A1 · Jarman · 2025 [cited by applicant]
US 20250116308A1 · Jarman et al. · 2025 [cited by applicant]
CN 110305504 · 2020 [cited by applicant]
CN 110981518 · 2021 [cited by applicant]
CN 109384470 · 2021 [cited by applicant]
CN 113045324 · 2021 [cited by applicant]
CN 110937910 · 2021 [cited by applicant]
CN 115385711 · 2022 [cited by applicant]
CN 113277869 · 2023 [cited by applicant]
CN 115773321 · 2023 [cited by applicant]
EP 1845075 · 2007 [cited by applicant]
EP 3248957 · 2017 [cited by applicant]
EP 3459923 · 2019 [cited by applicant]
EP 3805187 · 2021 [cited by applicant]
EP 4180408 · 2023 [cited by applicant]
EP 4223725 · 2023 [cited by applicant]
FR 2967170 · 2012 [cited by applicant]
GB 2485673 · 2012 [cited by applicant]
JP H0551286 · 1993 [cited by applicant]
JP 07043930 · 2022 [cited by applicant]
WO 2008075055 · 2008 [cited by applicant]
WO 2009127517 · 2009 [cited by applicant]
European Patent Office, Partial European Search Report dated Mar. 13, 2025 in Application No. 24202523.7. [cited by applicant]
European Patent Office, European Search Report dated Feb. 5, 2025 in Application No. 241987270. [cited by applicant]
European Patent Office, European Search Report dated Feb. 19, 2025in Application No. 242030484. [cited by applicant]
European Patent Office, European Search Report dated Feb. 25, 2025in Application No. 242050847. [cited by applicant]
USPTO; Requirement for Restriction/ Election dated Mar. 4, 2025 in U.S. Appl. No. 18/461,433. [cited by applicant]
European Patent Office, European Search Report dated Jun. 5, 2025 in Application No. 24202523.7. [cited by applicant]
USPTO; Non-Final Office Action dated May 21, 2025 in U.S. Appl. No. 18/461,433. [cited by applicant]
USPTO; Non-Final Office Action dated Aug. 21, 2025 in U.S. Appl. No. 18/474,607. [cited by applicant]
USPTO; Non-Final Office Action dated Sep. 4, 2025 in U.S. Appl. No. 18/483,367. [cited by applicant]
European Patent Office, European Search Report dated Jun. 12, 2025 in Application No. 24202053.5. [cited by applicant]
USPTO; Notice of Allowance dated Oct. 21, 2025 in U.S. Appl. No. 18/461,433. [cited by applicant]
USPTO; Notice of Allowance dated Dec. 1, 2025 in U.S. Appl. No. 18/461,433. [cited by applicant]
USPTO; Notice of Allowance dated Dec. 17, 2025 in U.S. Appl. No. 18/474,607. [cited by applicant]
USPTO; Notice of Allowance dated Jan. 16, 2026 in U.S. Appl. No. 18/474,607. [cited by applicant]
USPTO; Non-Final Office Action dated Apr. 9, 2026 in U.S. Appl. No. 18/489,329. [cited by applicant]