Three terminal broad area laser
Example embodiments relate to light detection and ranging (lidar) devices or other apparatus that incorporate laser light emitters capable of increased pulse energies and decreased pulse durations. These laser light emitters include a gain medium having two portions to which a pump electrode and a switch electrode, respectively, are coupled. The pump electrode is configured to apply a current through the gain medium that provides energy for lasing and the switch electrode is configured to apply a current through the gain medium that controls a transparency of the second portion of the gain medium. Thus the switch electrode, which controls the timing of emitted light pulses, can be driven by a lower current and thus have shorter pulse widths, rise time, and/or fall times, thereby allowing for shorter, higher-energy laser pulses to be emitted.
1 . A device comprising:
a gain medium, wherein the gain medium has an output edge through which photons generated in the gain medium can be emitted;
a common electrode electrically coupled to a first portion of the gain medium and to a second portion of the gain medium, wherein one of (i) the second portion of the gain medium is between the first portion of the gain medium and the output edge or (ii) the first portion of the gain medium is between the second portion of the gain medium and the output edge;
a pump electrode electrically coupled to the first portion of the gain medium, wherein the pump electrode is configured to apply a first current through the gain medium that provides energy for an emitted laser pulse;
a switch electrode electrically coupled to the second portion of the gain medium, wherein the switch electrode is configured to apply a second current through the gain medium, wherein the second current controls a transparency of the second portion of the gain medium such that the second current determines when the device begins emitting any laser light so as to control a duration of the emitted laser pulse; and
a circuit electrically coupled to the common electrode, the pump electrode, and the switch electrode, wherein the circuit is configured to:
apply the first current through the pump electrode, wherein applying the first current comprises controlling an amplitude of the first current such that a temperature of the gain medium is maintained at a specified temperature or within a specified range of temperatures; and
while applying the first current through the pump electrode, apply the second current through the switch electrode.
2 . The device of claim 1 ,
wherein applying the second current through the switch electrode comprises controlling the second current between a low level and a high level, wherein the low level causes the transparency of the second portion of the gain medium to be sufficiently low such that most light generated in the first portion of the gain medium is not generated via coherent stimulated emission, and wherein the high level causes the transparency of the second portion of the gain medium to be sufficiently high such that most light generated in the first portion of the gain medium is generated via coherent stimulated emission.
3 . The device of claim 2 , wherein a ratio between the first current and the high level of the second current is greater than 10:1.
4 . The device of claim 2 , wherein the high level of the second current is less than 25 milliamps.
5 . The device of claim 2 , further comprising:
an additional gain medium, wherein the additional gain medium has an output edge through which photons generated in the additional gain medium can be emitted;
an additional common electrode that is electrically coupled to the common electrode, to a first portion of the additional gain medium, and to a second portion of the additional gain medium, wherein one of (i) the second portion of the additional gain medium is between the first portion of the additional gain medium and the output edge of the additional gain medium or (ii) the first portion of the additional gain medium is between the second portion of the additional gain medium and the output edge of the additional gain medium;
an additional pump electrode that is electrically coupled to the pump electrode and to the first portion of the additional gain medium, wherein the additional pump electrode is configured to apply a current through the additional gain medium that provides energy for lasing; and
an additional switch electrode electrically coupled to the second portion of the additional gain medium, wherein the additional switch electrode is configured to apply a current through the additional gain medium that controls a transparency of the second portion of the additional gain medium;
wherein the circuit is also coupled to the additional common electrode, the additional pump electrode, and the additional switch electrode, wherein the circuit applying the first current through the pump electrode comprises the circuit applying a combined current to the pump electrode and to the additional pump electrode, and wherein the circuit is additionally configured to:
while applying the first current through the pump electrode, apply a third current through the additional switch electrode, wherein applying the third current through the additional switch electrode comprises controlling the third current between a low level and a high level, wherein the low level of the third current causes the transparency of the second portion of the additional gain medium to be sufficiently low such that most light generated in the first portion of the additional gain medium is not generated via coherent stimulated emission, and wherein the high level of the third current causes the transparency of the second portion of the additional gain medium to be sufficiently high such that most light generated in the first portion of the additional gain medium is generated via coherent stimulated emission.
6 . The device of claim 5 , wherein the gain medium and the additional gain medium are part of a single die of semiconductor material.
7 . The device of claim 1 , wherein the circuit is additionally configured to:
detect the temperature of the gain medium.
8 . The device of claim 1 , wherein the specified temperature corresponds to a temperature at which a maximum of an emission spectrum of the gain medium corresponds to a specified emission wavelength.
9 . The device of claim 1 , wherein a ratio between an area of the pump electrode and an area of the switch electrode is between 60:40 and 90:10.
10 . The device of claim 1 , wherein a width of the emitted laser pulse is less than 3 nanoseconds.
11 . The device of claim 1 , wherein a pulse energy of the emitted laser pulse is greater than 200 nanojoules.
12 . A semiconductor laser comprising:
a gain medium comprising a III-V semiconductor material, wherein the gain medium has an output edge through which photons generated in the gain medium can be emitted;
a common electrode electrically coupled to a first portion of the gain medium and to a second portion of the gain medium, wherein one of (i) the second portion of the gain medium is between the first portion of the gain medium and the output edge or (ii) the first portion of the gain medium is between the second portion of the gain medium and the output edge;
a pump electrode electrically coupled to the first portion of the gain medium, wherein the pump electrode is configured to apply a first current through the first portion of the gain medium, wherein the first current provides energy for an emitted laser pulse;
a switch electrode electrically coupled to the second portion of the gain medium, wherein the switch electrode is configured to apply a second current through the second portion of the gain medium, wherein the second current controls a transparency of the second portion of the gain medium such that the second current determines when the device begins emitting any laser light so as to control a duration of the emitted laser pulse; and
a circuit electrically coupled to the common electrode, the pump electrode, and the switch electrode, wherein the circuit is configured to:
apply the first current through the pump electrode, wherein applying the first current comprises controlling an amplitude of the first current such that the temperature of the gain medium is maintained at a specified temperature or within a specified range of temperatures; and
while applying the first current through the pump electrode, apply the second current through the switch electrode.
13 . The semiconductor laser of claim 12 ,
wherein applying the second current through the switch electrode comprises controlling the second current through the switch electrode between a low level and a high level, wherein the low level causes the transparency of the second portion of the gain medium to be sufficiently low that most light generated in the first portion of the gain medium is not generated via coherent stimulated emission, and wherein the high level causes the transparency of the second portion of the gain medium to be sufficiently high that most light generated in the first portion of the gain medium is generated via coherent stimulated emission.
14 . The semiconductor laser of claim 13 , wherein a ratio between the first current and the high level of the second current is greater than 10:1.
15 . The semiconductor laser of claim 13 , wherein the high level of the second current is less than 25 milliamps.
16 . The semiconductor laser of claim 12 , wherein the circuit is additionally configured to:
detect the temperature of the gain medium.
17 . The semiconductor laser of claim 12 , wherein a ratio between an area of the pump electrode and an area of the switch electrode is between 60:40 and 90:10.
18 . The semiconductor laser of claim 12 , wherein a width of the emitted laser pulse is less than 3 nanoseconds.
19 . The semiconductor laser of claim 12 , wherein a pulse energy of the emitted laser pulse is greater than 200 nanojoules.
20 . The semiconductor laser of claim 12 , wherein the gain medium comprises alternating layers of strained In 0.2 Ga 0.8 As and GaAs.