Granted Patent B2

US 12,645,142 · App. 17/255,286 · Granted Jun 2, 2026

Inventors: Shunji Kawato (Kakegawa, JP); Hiroshi Yanagita (Kakegawa, JP); Yusuke Hama (Kakegawa, JP); Takayuki Sao (Kakegawa, JP); Taku Hirayama (Tokyo, JP)

Assignee: Merck Patent GmbH

G03F7/0392G03F7/0045G03F7/0752G03F7/094G03F7/20G03F7/40G03F7/70025H10P50/28C08G65/08C08G65/329

Abstract

Claims (47)

1 . A photoresist composition comprising

(A) a single or a plurality of polymer whose solubility changes under the existence of acid,

(B) a single or a plurality of photo acid generator,

(C) a single or a plurality of compound comprising unit EO and unit PO, and

(D) a single or plurality of solvent,

wherein the unit EO is represented by following formula (1),

and the unit PO is represented by following formula (2)

wherein the weight average molecular weight (Mw) of the (C) compound(s) is 1,000-50 000,

the mass ratio of the (C) compound to the (A) polymer is 3-50 mass %, and

the terminals of the (C) compound are modified by R 1 — and R 2 —O—,

where R 1 is C 1-10 alkyl, and R 2 is hydrogen or C 1-10 alkyl.

2 . The photoresist composition according to claim 1 , wherein (C) a single or a plurality of compound is a plasticizer, and

the (C) compound comprises a copolymer at least one selected from the group consisting of random copolymer, block copolymer, alternating copolymer, graft copolymer and combination of any of these.

3 . The photoresist composition according to claim 1 , wherein the (C) compound comprises a copolymer comprising both unit EO and unit PO, or the (C) compound is a plurality of compounds in which at least one compound comprised unit EO and at least one compound comprises unit PO.

4 . The photoresist composition according to claim 1 , wherein the (A) polymer comprises unit 1 represented by below formula (3), unit 2 represented by below formula (4), and/or unit 3 represented by below formula (5),

R 3 is each independently C 1-10 alkyl or C 1-10 alkoxyl, and n3 is 0, 1, 2, 3 or 4;

R 4 is each independently C 1-10 alkyl or C 1-10 alkoxyl in which —CH 2 — can be replaced by O— and n4 is 0, 1, 2, 3, 4 or 5;

R 5 is hydrogen or C 1-10 alkyl, and R 6 is C 1-20 alkyl which optionally make hydrocarbon ring.

5 . The photoresist composition according to claim 1 , wherein molecular ratio of [(unit EO)/(unit PO)] in the (C) compound(s) is 10/90 to 90/10.

6 . The photoresist composition according to claim 1 , the (D) solvent comprises at least one selected from the group consisting of aliphatic hydrocarbon solvent, aromatic hydrocarbon solvent, monoalcohol solvent, polyol solvent, ketone solvent, ether solvent, ester solvent, nitrogen-containing solvent, and sulfur-containing solvent.

7 . The photoresist composition according to claim 1 , wherein the (B) photo acid generator comprises at least one selected from the group consisting of sulfonic acid derivative, diazomethane compound, onium salt, sulfone imide compound, disulfonic compound, nitrobenzyl compound, benzoin tosylate compound, iron arene complex compound, halogen-containing triazine compound, acetophenone derivative, and cyano-containing oxime sulfonate.

8 . The photoresist composition according to claim 1 , wherein the mass ratio of the (A) polymer to the total mass of the photoresist composition is 5-50 mass %, the mass ratio of the (B) photo acid generator to the mass of the (A) polymer is 0.10-8 mass %, and

the mass ratio of the (C) compound to the mass of the (A) polymer is 0.1-50 mass %.

9 . The photoresist composition according to claim 1 , further comprising at least one additive selected from the group consisting of a quencher, a surfactant, dye, a contrast enhancer, acid, base, a radical generator, and an agent for enhancing adhesion to substrates.

10 . A method for manufacturing a photoresist coaling, comprising:

applying the photoresist composition according to claim 1 above a single or a plurality of Si containing layer; and

curing the applied photoresist composition to form the photoresist coating.

11 . The method for manufacturing a photoresist coating according to claim 10 , wherein the photoresist composition is applied above a plurality of Si containing layers, the Si containing layers comprise plural species,

at least one species of Si containing layer is conductive, and

at least one species of Si containing layer is electrically insulative.

12 . The method for manufacturing a photoresist coating according to claim 10 , wherein the thickness of the photoresist coating is 0.5-200 μm.

13 . A method for manufacturing an etched photoresist coating, comprising:

manufacturing the photoresist coating according to claim 10 ;

exposing the photoresist coating;

developing the photoresist coating; and

(step 1) etching the developed photoresist coating.

14 . A method for manufacturing a single or plurality of etched Si containing layer, comprising:

manufacturing an etched photoresist coating according to claim 13 ; and

(step 2) etching the Si containing layer(s).

15 . The method for manufacturing a single or plurality of etched Si containing layer according to claim 14 , further comprising repeating (step 1) and (step 2) more than 1 time(s) wherein

the etching of (step 1) is isotropic etching, and

the etching of (step 2) is anisotropic etching.

16 . A method for manufacturing devices comprising the method according to claim 10 .

17 . The method for manufacturing devices according to claim 16 , further comprising forming wirings in the devices.

18 . The photoresist composition according to claim 1 , wherein the (C) compound only contains carbon, hydrogen and oxygen.

19 . The photoresist composition according to claim 4 , wherein the polymer (A) is a copolymer comprising unit 1, unit 2, and unit 3.

20 . The method for manufacturing a photoresist according to claim 12 , wherein the thickness of the photoresist coating is 5-200 μm.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (29)