Plasma monitoring system and method of monitoring plasma
A plasma monitoring system includes a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage, a light transmitter on the view window and including optical fibers configured to obtain a first light generated during the plasma process, a detachable reflection mirror between the view window and the optical fibers, a light generator configured to irradiate a second light onto the reflection mirror through the optical fibers and to irradiate a third light onto the view window through the optical fibers, and a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror, and to correct the light spectrum based on the third light reflected from the view window.
1 . A plasma monitoring system, comprising:
a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage;
a light transmitter on the view window, the light transmitter including a plurality of optical fibers configured to obtain a first light that is generated during the plasma process;
a reflection mirror between the view window and the plurality of optical fibers, the reflection mirror being detachable from the view window;
a light generator configured
to irradiate a second light onto the reflection mirror through the plurality of optical fibers, and
to irradiate a third light onto the view window through the plurality of optical fibers with the reflection mirror in a detached configuration; and
a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror through the plurality of optical fibers, and to correct the light spectrum based on the third light reflected from the view window through the plurality of optical fibers.
2 . The plasma monitoring system as claimed in claim 1 , wherein the view window is on a side wall of the chamber.
3 . The plasma monitoring system as claimed in claim 1 , wherein the light analyzer is configured to obtain sensitivity for each wavelength of each of the plurality of optical fibers and for the light analyzer from the second light reflected from the reflection mirror.
4 . The plasma monitoring system as claimed in claim 3 , wherein the light analyzer is configured to correct the light spectrum through the sensitivity for each wavelength of each of the plurality of optical fibers and the light analyzer.
5 . The plasma monitoring system as claimed in claim 1 , wherein the light analyzer is configured to obtain reflectance and transmittance of the view window from the third light reflected from the view window.
6 . The plasma monitoring system as claimed in claim 5 , wherein the light analyzer is configured to correct the light spectrum through the reflectance and the transmittance of the view window.
7 . The plasma monitoring system as claimed in claim 1 , wherein the light analyzer is configured to correct the light spectrum based on the third light reflected from the view window, the view window including a deposition material.
8 . The plasma monitoring system as claimed in claim 1 , wherein:
the reflection mirror is on the view window when the second light is irradiated from the light generator, and
the reflection mirror is detached from the view window when the third light is irradiated from the light generator.
9 . The plasma monitoring system as claimed in claim 1 , wherein the light analyzer is configured to correct the light spectrum obtained from the first light based on the third light reflected from the view window in real time during the plasma process.
10 . The plasma monitoring system as claimed in claim 1 , wherein the plurality of optical fibers are spaced apart from each other on the view window.
11 . A plasma monitoring system, comprising:
a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage;
a light transmitter on the view window, the light transmitter including a plurality of optical fibers configured to obtain a first light that is generated during the plasma process;
a reflection mirror on the view window, the reflection mirror being detachable from the view window and being configured to transmit the first light that is incident from the view window;
a light generator configured
to irradiate a second light onto the reflection mirror through the plurality of optical fibers, and
to irradiate a third light onto the view window through the plurality of optical fibers with the reflection mirror in a detached configuration; and
a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror through the plurality of optical fibers, and to correct the light spectrum in real time during the plasma process based on the third light reflected from the view window through the plurality of optical fibers.
12 . The plasma monitoring system as claimed in claim 11 , wherein the view window is on a side wall of the chamber.
13 . The plasma monitoring system as claimed in claim 11 , wherein the light analyzer is configured to obtain sensitivity for each wavelength of each of the plurality of optical fibers and for the light analyzer from the second light reflected from the reflection mirror.
14 . The plasma monitoring system as claimed in claim 13 , wherein the light analyzer is configured to correct the light spectrum through the sensitivity for each wavelength of each of the plurality of optical fibers and the light analyzer.
15 . The plasma monitoring system as claimed in claim 11 , wherein the light analyzer is configured to obtain reflectance and transmittance of the view window from the third light reflected from the view window.
16 . The plasma monitoring system as claimed in claim 15 , wherein the light analyzer is configured to correct the light spectrum through the reflectance and the transmittance of the view window.
17 . The plasma monitoring system as claimed in claim 11 , wherein the light analyzer is configured to correct the light spectrum based on the third light reflected from the view window, the view window including a deposition material.
18 . The plasma monitoring system as claimed in claim 11 , wherein:
the reflection mirror is on the view window when the second light is irradiated from the light generator, and
the reflection mirror is detached from the view window when the third light is irradiated from the light generator.
19 . The plasma monitoring system as claimed in claim 11 , wherein the plurality of optical fibers are spaced apart from each other on the view window.
20 . A plasma monitoring system, comprising:
a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage;
a reflection mirror on the view window, the reflection mirror being detachable from the view window and being configured to transmit a first light that is generated during the plasma process and is incident from the view window;
a light generator configured
to irradiate a second light onto the reflection mirror through a plurality of optical fibers, and
to irradiate a third light onto the view window through the plurality of optical fibers with the reflection mirror in a detached configuration; and
an optical scanner configured to scan the first light through the reflection mirror, the second light reflected from the reflection mirror and the third light reflected from an inner surface of the view window, through the plurality of optical fibers; and
a spectrometer configured to obtain light spectrums from the first light, the second light reflected from the reflection mirror and the third light reflected from the view window.