Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a spacer structure disposed in the second dielectric layer, and a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer. The conductive structure is surrounded by the spacer structure. The semiconductor device structure further includes a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer and the spacer structure. The liner layer has a tapered sidewall in direct contact with the first dielectric layer.
1 . A semiconductor device structure, comprising:
a first dielectric layer disposed over a semiconductor substrate;
a second dielectric layer disposed over the first dielectric layer;
a spacer structure disposed in the second dielectric layer;
a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer, wherein the conductive structure is surrounded by the spacer structure; and
a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer and the spacer structure, wherein the liner layer has a tapered sidewall in direct contact with the first dielectric layer;
wherein the spacer structure further comprises an L-shaped liner and an air gap enclosed by the L-shaped liner and the liner layer.
2 . The semiconductor device structure of claim 1 , wherein the spacer structure is in direct contact with a top surface of the first dielectric layer.
3 . The semiconductor device structure of claim 1 , wherein an angle between the tapered sidewall and a bottom surface of the liner layer is greater than 90 degrees.
4 . The semiconductor device structure of claim 1 , wherein the liner layer is in direct contact with a top surface and a sidewall of the second dielectric layer.
5 . The semiconductor device structure of claim 1 , wherein the conductive structure further comprises:
a barrier layer; and
a metal filling portion disposed over and surrounded by the barrier layer, wherein the metal filling portion comprises copper (Cu).
6 . The semiconductor device structure of claim 5 , wherein a top width of the metal filling portion is greater than a bottom width of the metal filling portion.
7 . The semiconductor device structure of claim 5 , wherein the conductive structure further comprises:
a metal layer disposed between the barrier layer and the metal filling portion, wherein the metal layer comprises copper-manganese (Cu—Mn) alloy.
8 . A semiconductor device structure, comprising:
a first dielectric layer disposed over a semiconductor substrate;
a second dielectric layer disposed over the first dielectric layer;
a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer;
a liner layer covering a top surface of the second dielectric layer and surrounding the conductive structure, wherein the liner layer has a tapered sidewall in direct contact with the first dielectric layer; and
a spacer structure disposed between the liner layer and the second dielectric layer, wherein the spacer structure is in direct contact with a top surface of the first dielectric layer;
wherein the spacer structure further comprises an L-shaped liner;
and an air gap enclosed by the L-shaped liner and the liner layer.
9 . The semiconductor device structure of claim 8 , wherein the liner layer is in direct contact with the second dielectric layer, the spacer structure and the conductive structure.
10 . The semiconductor device structure of claim 8 , wherein a bottom surface of the liner layer is higher than a bottom surface of the first dielectric layer, and an angle between the tapered sidewall and the bottom surface of the liner layer is greater than 90 degrees.
11 . The semiconductor device structure of claim 8 , wherein the conductive structure further comprises:
a metal filling portion;
a metal layer surrounding the metal filling portion; and
a barrier layer surrounding the metal layer.
12 . The semiconductor device structure of claim 11 , wherein a top width of the metal filling portion is greater than a bottom width of the metal filling portion.
13 . The semiconductor device structure of claim 11 , wherein the metal filling portion comprises copper (Cu), and the metal layer comprises copper-manganese (Cu—Mn) alloy.