Antiferroelectric containing dysprosium and a manufacturing method thereof
An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a Pb x La 1-x ([Zr 1-Y Sn Y ] Z Ti 1-Z ) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.
1 . A method for manufacturing an antiferroelectric, the method comprising:
mixing dielectric precursors to obtain a precursor mixture, wherein the dielectric precursors comprise: 50%-60% by weight of lead oxide (PbO); 15%-30% by weight of zirconium oxide (ZrO 2 ); 1%-5% by weight of titanium oxide (TiO 2 ); 8%-14% by weight of lanthanum oxide (La 2 O 5 ) and 1%-16% by weight of tin oxide (SnO 2 );
calcining the precursor mixture to obtain a calcined product;
pressurizing the calcined product to obtain a molded article;
adding dysprosium (Dy) to the molded article to obtain a resulting product; and
sintering the resulting product to obtain the antiferroelectric,
wherein the antiferroelectric has a Pb x La 1-x ([Zr 1-y Sn y ] z Ti 1-z ) composition, and X, Y, and Z are individually greater than 0 and less than 1.
2 . The method of claim 1 , wherein the dysprosium (Dy) is contained in an amount of 0.1% by weight to 0.4% by weight based on 100% by weight of the antiferroelectric.
3 . The method of claim 1 , wherein the sintering comprises adding a sintered agent, and
wherein the sintered agent comprises 1%-4% by weight of zinc oxide (ZnO) and 1%-10% by weight of lead oxide (PbO) based on 100% by weight of the antiferroelectric.
4 . The method of claim 1 , wherein the sintering is conducted at a sintering temperature in a range of 900° C. to 1100° C.
5 . The method of claim 1 , wherein X is 0.87≤X≤0.89.
6 . The method of claim 1 , wherein Y is 0.53≤Y≤0.55.
7 . The method of claim 1 , wherein Z is 0.77≤Z≤0.79.
8 . The method of claim 1 , wherein the antiferroelectric has a density in a range of 7.5 g/cm 3 to 8.0 g/cm 3 .
9 . The method of claim 1 , wherein the antiferroelectric has a permittivity (ε) of 1,000 or more.
10 . The method of claim 1 , wherein the antiferroelectric has a breakdown voltage of 10 kV/mm or more.