Operation method of memory controller configured to control memory device
Disclosed is an operation method of a memory controller controlling a memory device. The operation method includes loading raw data from the memory device, performing a 0th error correction operation on the raw data, generating first flip data by performing a first bit flip operation on the raw data based on a correction history table, when an error of the raw data is not corrected through the 0th error correction operation, and performing a first error correction operation on the first flip data, and the correction history table includes correction addresses indicating locations of one or more memory cells in the memory device, which are associated with previously corrected error bits.
1 . A method of operating a memory controller configured to control a memory device, the method comprising:
loading data from the memory device;
performing a first error correction operation on the data;
based on an error in the data not being corrected through the first error correction operation, generating first flip data by performing a first bit flip operation on the data based on a correction history information; and
performing a second error correction operation on the first flip data,
wherein the correction history information comprises one or more correction addresses indicating locations of one or more memory cells in the memory device, which are associated with previously corrected error bits.
2 . The method of claim 1 , wherein the generating of the first flip data comprises:
selecting a first target address among the one or more correction addresses corresponding to a row address of the data from the correction history information; and
generating the first flip data by flipping a bit of the data, which corresponds to the first target address.
3 . The method of claim 2 , wherein the correction history information comprises one or more count information each corresponding to the one or more correction addresses, and wherein each of the one or more count information indicates a number of times a bit corresponding to a respective one of the one or more correction addresses is corrected.
4 . The method of claim 3 , wherein the first target address is a first correction address, among the one or more correction addresses corresponding to the row address of the data, the first correction address associated with a largest count value, among the one or more count information.
5 . The method of claim 2 , wherein, when the number of error bits of the data is N and the number of error bits correctable by the memory controller is K, the first target address corresponds to (N−K) bits of the data, and wherein N and K are natural numbers.
6 . The method of claim 1 , wherein the generating of the first flip data comprises:
reloading the data from the memory device; and
generating the first flip data by performing the first bit flip operation on the reloaded data.
7 . The method of claim 1 , wherein the data loaded from the memory device are stored in a read buffer of the memory controller, and
wherein the generating of the first flip data comprises:
generating the first flip data by performing the first bit flip operation on the data stored in the read buffer based on the correction history information.
8 . The method of claim 1 , further comprising:
when an error of the first flip data is not corrected through the second error correction operation, generating second flip data by performing a second bit flip operation on the data based on the correction history information; and
performing a third error correction operation on the second flip data.
9 . The method of claim 8 , wherein, in the data, bits flipped through the first bit flip operation are different from bits flipped through the second bit flip operation.
10 . The method of claim 8 , further comprising:
when an error of the second flip data is not corrected by the third error correction operation, performing an error handling operation.
11 . The method of claim 1 , further comprising:
when an error of the first flip data is corrected, updating the correction history information based on a correction address associated with a location of an error bit corrected in the first flip data.
12 . The method of claim 1 , further comprising:
storing the correction history information as a correction history table in an external nonvolatile memory.
13 . The method of claim 1 , wherein the memory device is a dynamic random access memory (DRAM) device.
14 . A method of operating a memory controller configured to control a memory device, the method comprising:
loading first data from the memory device;
performing a first error correction operation on the first data;
updating a correction history information based on a first address corresponding to an error bit corrected in the first data;
loading second data having a row address identical to a row address of the first data from the memory device;
performing a second error correction operation on the second data;
based on an error of the second data not being corrected, generating first flip data by flipping a bit of the second data, which corresponds to the first address, based on the correction history information; and
performing a second error correction operation on the first flip data.
15 . The method of claim 14 , wherein the generating of the first flip data comprises:
reloading the second data from the memory device; and
generating the first flip data by flipping a bit of the reloaded second data, which corresponds to the first address.
16 . The method of claim 14 , further comprising:
when an error of the first flip data is corrected through the second error correction operation, updating the correction history information based on a second address corresponding to an error bit corrected in the first flip data.
17 . A method of operating a memory controller configured to control a memory device, the method comprising:
loading data from the memory device;
performing a first error correction operation on the data;
based on an error in the data not being corrected through the first error correction operation, generating first flip data by flipping at least one first bit among a plurality of bits of the data based on correction history information related to error corrected bits of a memory cell; and
performing a second error correction operation on the first flip data.
18 . The method of claim 17 , further comprising:
when an error of the first flip data is not corrected through the second error correction operation, generating second flip data by flipping at least one second bit among the plurality of bits of the data; and
performing a third error correction operation on the second flip data.
19 . The method of claim 17 , wherein the at least one first bit flipped from among the plurality of bits of the data is selected based on the correction history information, and
wherein the correction history information comprises an address of the memory cell corresponding to a bit of an error-corrected memory cell among memory cells of the memory device, which stores the data.
20 . The method of claim 19 , further comprising:
when an error of the first flip data is corrected, updating the correction history information based on information about a corrected error bit of the first flip data.