Semiconductor device
An improved power MOSFET having a super junction structure is disclosed. The improved power MOSFET includes a plurality of unit cells UC, and each of the plurality of unit cells UC includes a column region PC 1 , a column region PC 2 , a pair of trenches TR formed between the column regions PC 1 and PC 2 in the X-direction and a pair of gate electrodes GE formed in the pair of trenches TR via gate insulating films (GI). The pair of trenches TR and the pair of gate-electrodes GE extend in Y-direction in a plan view. A plurality of column regions PC 1 are formed so as to be spaced apart from one another along the Y-direction, and a width(L 1 ) of the column region PC 1 in the Y direction is wider than a width(L 2 ) of the column region PC 1 in the X direction.
1 . A semiconductor device including a plurality of unit cells, each of the plurality of unit cells comprising:
a semiconductor substrate having a drift region formed of a semiconductor layer of a first conductivity type;
a body region of a second conductivity type opposite to the first conductivity type, formed on a surface of the drift region;
a source region of the first conductivity type formed on a surface of the body region;
a first column region and a second column region each of the second conductivity type formed in the drift region so as to be positioned under the body region and adjacent to and apart from each other in a first direction in a plan view;
a pair of trenches formed between the first column region and the second column region in the first direction and formed in the drift region so that bottom portions of the pair of trenches reach a position deeper than the body region; and
a pair of gate electrodes formed in the pair of trenches respectively via a gate insulating film,
wherein the pair of trenches and the pair of gate electrodes extend in a second direction orthogonal to the first direction in a plan view,
wherein a width of the first column region in the second direction is wider than a width of the first column region in the first direction,
wherein a plurality of first column regions are formed along the second direction and to space from one another,
wherein the plurality of first column regions and the plurality of second column regions are arranged in a staggered manner in a plan view, and
wherein a part of one of the first column regions and a part of one of the second column regions are adjacent to each other in the first direction.
2 . The semiconductor device according to claim 1 , wherein the width of the first column region in the second direction is not less than twice the width of the first column region in the first direction.
3 . The semiconductor device according to claim 1 , wherein a distance at which the plurality of first column regions are spaced apart from each other is shorter than a width of one of the first column regions in the second direction.
4 . The semiconductor device according to claim 2 , wherein a width of the second column region in the second direction is wider than a width of the second column region in the first direction,
wherein a plurality of the second column regions are formed while being separated from each other along the second direction, and
wherein a distance at which the plurality of second column regions are separated from each other is shorter than a width of one of the second column regions in the second direction.
5 . The semiconductor device according to claim 4 , wherein a width of the second column region in the second direction is not less than twice a width of the second column region in the first direction.
6 . The semiconductor device according to claim 1 , wherein a distance at which the plurality of first column regions are separated from each other is shorter than a distance between the first column region and the second column region in the first direction, and
wherein the distance is longer than a value obtained by subtracting a width of each of the pair of trenches in the first direction from a distance between the first column region and the second column region in the first direction.
7 . The semiconductor device according to claim 1 , wherein the second column region extends in the second direction and is adjacent to the plurality of first column regions in the first direction.
8 . The semiconductor device according to claim 1 , wherein each of the plurality of unit cells further includes:
an interlayer insulating film formed on the semiconductor substrate so as to cover the pair of gate electrodes,
a first hole penetrating the interlayer insulating film and the source region so that a bottom portion thereof is located in the body region, and
a source wiring formed on the interlayer insulating film so as to fill the first hole, and
wherein the first hole extends in the second direction so as to overlap the plurality of first column regions in a plan view.