Wire structure, wire capacitor, and electronic device including the wire capacitor
A wire structure includes a metal layer, a dielectric layer covering at least a portion of an outer surface of the metal layer, and a filling material provided in the dielectric layer, wherein a flexibility of the filling material is higher than a flexibility of the dielectric layer.
1 . A wire structure comprising:
a metal layer;
a dielectric layer covering at least a portion of an outer surface of the metal layer, the dielectric layer being hollow and cylindrical; and
a filling material provided in the dielectric layer and filling cracks generated by applying an external force to the dielectric layer,
wherein a flexibility of the filling material is higher than a flexibility of the dielectric layer.
2 . The wire structure of claim 1 , wherein the filling material comprises:
a first filling material which contacts the metal layer; and
a second filling material which is spaced apart from the metal layer.
3 . The wire structure of claim 1 , wherein a length of the filling material in a circumferential-direction of the metal layer is greater than a length of the filling material in a length direction of the metal layer.
4 . The wire structure of claim 1 , further comprising a filling layer which covers an outer surface of the dielectric layer.
5 . The wire structure of claim 1 , wherein a thickness of the filling material in a radial direction of the metal layer is less than or equal to a thickness of the dielectric layer in the radial direction.
6 . The wire structure of claim 1 , wherein the filling material has a tapered shape having a decreasing horizontal width toward the metal layer.
7 . The wire structure of claim 1 , wherein a Young's modulus of the filling material is less than a Young's modulus of the dielectric layer.
8 . The wire structure of claim 1 , wherein the filling material comprises a polymeric material having insulating properties.
9 . A wire capacitor comprising:
a first metal layer;
a dielectric layer covering at least a portion of an outer surface of the first metal layer, the dielectric layer being hollow and cylindrical;
a second metal layer covering at least a portion of an outer surface of the dielectric layer; and
a filling material provided in the dielectric layer and filling cracks generated by applying an external force to the dielectric layer,
wherein a flexibility of the filling material is higher than a flexibility of the dielectric layer.
10 . The wire capacitor of claim 9 , wherein a first surface of the filling material contacts the second metal layer, and
a second surface of the filling material contacts the dielectric layer or the first metal layer.
11 . The wire capacitor of claim 10 , wherein a flexibility of the first metal layer is higher than the flexibility of the dielectric layer.
12 . The wire capacitor of claim 9 , further comprising a filling layer provided between the dielectric layer and the second metal layer.
13 . The wire capacitor of claim 12 , wherein the filling material is formed integrally with the filling layer.
14 . The wire capacitor of claim 12 , wherein a thickness of the filling layer in a radial direction of the first metal layer is less than or equal to a thickness of the dielectric layer in the radial direction.
15 . The wire capacitor of claim 9 , wherein a thickness of the first metal layer in a radial direction of the first metal layer is in a range of from about 5 μm to about 200 μm, and
wherein a thickness of each of the dielectric layer, the filling material, and the second metal layer, in the radial direction, is in a range of from about 100 nm to about 1 μm.
16 . An electronic device comprising:
a substrate comprising:
a base insulating layer;
a plurality of line patterns provided in the base insulating layer; and
a plurality of vias provided in the base insulating layer and contacting and electrically connected to at least some line patterns of the plurality of line patterns; and
a wire capacitor contacting at least some line patterns of the plurality of line patterns and configured to store charges,
wherein the wire capacitor comprises:
a first metal layer;
a dielectric layer covering at least a portion of an outer surface of the first metal layer, the dielectric layer being hollow and cylindrical;
a second metal layer covering at least a portion of an outer surface of the dielectric layer; and
a filling material provided in the dielectric layer and filling cracks generated by applying an external force to the dielectric layer,
wherein a flexibility of the filling material is higher than a flexibility of the dielectric layer.
17 . The electronic device of claim 16 , wherein the wire capacitor is bent.
18 . The electronic device of claim 16 , further comprising a filling layer provided between the dielectric layer and the second metal layer, and having a hollow cylindrical shape.
19 . The electronic device of claim 16 , wherein both ends of the wire capacitor are provided at a same vertical level.
20 . The electronic device of claim 16 , wherein both ends of the wire capacitor are provided at different vertical levels.