Light receiving element, photodetector, electronic apparatus, and method of manufacturing light receiving element
Provided is a light receiving element capable of improving a transfer failure in a structure in which a photoelectric converter is embedded. A light receiving element includes a photoelectric conversion region of a first conductivity type, a well region of a second conductivity type provided on a side of one surface of the photoelectric conversion region, a floating diffusion region of the first conductivity type provided on a side of a one surface of the well region opposite to the photoelectric conversion region, a transfer gate electrode that is embedded in a depth direction of the well region with a gate insulating film interposed therebetween and transfers a signal charge photoelectrically converted in the photoelectric conversion region to the floating diffusion region, and an auxiliary electrode that is embedded in the well region with the gate insulating film interposed therebetween and extends toward a side surface of the transfer gate electrode.
1 . A light receiving element, comprising:
a photoelectric conversion region of a first conductivity type;
a well region of a second conductivity type provided on a side of one surface of the photoelectric conversion region;
a floating diffusion region of the first conductivity type provided on a side of a one surface of the well region opposite to the photoelectric conversion region;
a transfer gate electrode that is embedded in a depth direction of the well region with a gate insulating film interposed therebetween and transfers a signal charge photoelectrically converted in the photoelectric conversion region to the floating diffusion region; and
an auxiliary electrode that is embedded in the well region with the gate insulating film interposed therebetween and extends toward a side surface of the transfer gate electrode.
2 . The light receiving element according to claim 1 , wherein the auxiliary electrode includes
a first embedded region extending in the depth direction of the well region, and
a second embedded region connected to an end in a depth direction of the first embedded region and extending in a direction orthogonal to the depth direction of the well region toward the side surface of the transfer gate electrode.
3 . The light receiving element according to claim 1 , wherein the auxiliary electrode includes
a first embedded region extending in the depth direction of the well region, and
a second embedded region connected to an end in a depth direction of the first embedded region and extending in a direction oblique to the depth direction of the well region toward the side surface of the transfer gate electrode.
4 . The light receiving element according to claim 1 , wherein the auxiliary electrode includes an embedded region extending in a direction oblique to the depth direction of the well region toward the side surface of the transfer gate electrode.
5 . The light receiving element according to claim 1 , wherein the auxiliary electrode includes a protrusion protruding from the one surface of the well region.
6 . The light receiving element according to claim 5 , wherein
the transfer gate electrode includes a protrusion protruding from the one surface of the well region, and
the protrusion of the auxiliary electrode is apart from the protrusion of the transfer gate electrode.
7 . The light receiving element according to claim 5 , wherein
the transfer gate electrode includes a protrusion protruding from the one surface of the well region, and
the protrusion of the auxiliary electrode is connected to the protrusion of the transfer gate electrode.
8 . The light receiving element according to claim 1 , wherein potentials are applied to the transfer gate electrode and the auxiliary electrode independently of each other.
9 . The light receiving element according to claim 8 , wherein a potential applied to the auxiliary electrode is lower than a potential applied to the transfer gate electrode.
10 . The light receiving element according to claim 9 , wherein a timing of stopping application of the potential to the auxiliary electrode is earlier than a timing of stopping application of the potential to the transfer gate electrode.
11 . The light receiving element according to claim 1 , wherein a common potential is simultaneously applied to the transfer gate electrode and the auxiliary electrode.
12 . The light receiving element according to claim 1 , further comprising a pixel transistor provided on the side of the one surface of the well region.
13 . A photodetector, comprising:
a pixel region including a plurality of pixels arranged in a matrix, wherein each of the plurality of pixels includes
a photoelectric conversion region of a first conductivity type,
a well region of a second conductivity type provided on a side of one surface of the photoelectric conversion region,
a floating diffusion region of the first conductivity type provided on a side of one surface of the well region opposite to the photoelectric conversion region,
a transfer gate electrode that is embedded in a depth direction of the well region with a gate insulating film interposed therebetween and transfers a signal charge photoelectrically converted in the photoelectric conversion region to the floating diffusion region, and
an auxiliary electrode that is embedded in the well region with the gate insulating film interposed therebetween and extends toward a side surface of the transfer gate electrode.
14 . An electronic apparatus, comprising:
a photodetector having a pixel region including a plurality of pixels arranged in a matrix; and
a signal processing circuit that processes an output signal of the photodetector, wherein
each of the plurality of pixels includes
a photoelectric conversion region of a first conductivity type,
a well region of a second conductivity type provided on a side of one surface of the photoelectric conversion region,
a floating diffusion region of the first conductivity type provided on a side of one surface of the well region opposite to the photoelectric conversion region, a transfer gate electrode that is embedded in a depth direction of the well region with a gate insulating film interposed therebetween and
transfers a signal charge photoelectrically converted in the photoelectric conversion region to the floating diffusion region, and
an auxiliary electrode that is embedded in the well region with the gate insulating film interposed therebetween and extends toward a side surface of the transfer gate electrode.
15 . A method of manufacturing a light receiving element, the method comprising:
forming a well region of a second conductivity type on a side of one surface of a photoelectric conversion region of a first conductivity type;
forming a floating diffusion region of the first conductivity type on a side of one surface of the well region opposite to the photoelectric conversion region;
embedding a transfer gate electrode that transfers a signal charge photoelectrically converted in the photoelectric conversion region to the floating diffusion region in a depth direction of the well region with a gate insulating film interposed therebetween; and
embedding an auxiliary electrode that extends toward a side surface of the transfer gate electrode in the well region with the gate insulating film interposed therebetween.
16 . The method of manufacturing the light receiving element according to claim 15 , wherein the embedding the auxiliary electrode includes
embedding an insulating film inside the well region,
digging a trench exposing the insulating film in the depth direction of the well region,
expanding the trench toward the side surface of the transfer gate electrode by removing the insulating film, and
embedding the auxiliary electrode in the trench having been expanded with the gate insulating film interposed therebetween.