Semiconductor device
View Patent ↗A semiconductor device includes a substrate, a plurality of oxide definition structures, a plurality of metal gates and a first conductive via. The oxide definition structures are formed on the substrate and arranged in a first direction. The metal gates are formed on the substrate and extend in a second direction. The first conductive via is formed on the substrate, located between two of the metal gates, extends in the first direction and has a first width in the second direction. There is a pitch between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the pitch ranges between 0.2 and 0.7.
1 . A semiconductor device, comprising:
a substrate;
a plurality of oxide definition (OD) structures formed on the substrate and arranged in a first direction;
a plurality of metal gates formed on the substrate and extending in the first direction; and
a first conductive via formed on the substrate, located between two of the metal gates, extending in the first direction and having a first width in a second direction;
wherein there is a pitch between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the pitch ranges between 0.2 and 0.7;
wherein the semiconductor device further comprises:
a second conductive via formed above the first conductive via;
wherein the first conductive via has a base width in the second direction, and a second ratio of the first width to the base width ranges between 0.5 and 0.99.
2 . The semiconductor device as claimed in claim 1 , wherein the first conductive via comprises a first portion having the first width, and the semiconductor device further comprises:
an oxide layer formed below the first portion of the first conductive via.
3 . The semiconductor device as claimed in claim 1 , wherein the first conductive via comprises a first portion having the first width, and the semiconductor device further comprises:
an epitaxy layer formed below the first portion of the first conductive via.
4 . The semiconductor device as claimed in claim 1 , wherein the first conductive via comprises a base portion having the base width, and the semiconductor device further comprises:
an epitaxy layer formed below the base portion of the first conductive via.
5 . The semiconductor device as claimed in claim 1 , wherein the first conductive via comprises a first portion having the first width, and the second conductive via and the first portion are staggered in the first direction.
6 . The semiconductor device as claimed in claim 1 , wherein the first conductive via comprises a first portion having the first width and a second portion;
wherein the first portion and the second portion are located at two opposite sides of the second conductive via respectively in the first direction.
7 . The semiconductor device as claimed in claim 1 , wherein the first conductive via comprises a first portion having the first width and a second portion having a second width, the first portion is separated from the second portion, and the first width is different from the second width.
8 . A semiconductor device, comprising:
a substrate;
a plurality of OD structures formed on the substrate and arranged in a first direction;
a plurality of metal gates formed on the substrate and extending in the first direction; and
a first conductive via formed on the substrate, located between two of the metal gates, extending in the first direction and comprising a first portion and a base portion;
wherein the base portion has a first lateral surface, and the first portion has a second lateral surface recessed with respect to the first lateral surface;
wherein the semiconductor device further comprises:
a second conductive via formed above the first conductive via;
wherein the first conductive via has a first width in the second direction, the first conductive via has a base width in a second direction, and a second ratio of the first width to the base width ranges between 0.5 and 0.99.
9 . The semiconductor device as claimed in claim 8 , wherein the first portion has a first width in the second direction, there is a pitch between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the pitch ranges between 0.2 and 0.7.
10 . The semiconductor device as claimed in claim 8 , further comprising:
an oxide layer formed below the first portion of the first conductive via.
11 . The semiconductor device as claimed in claim 8 , wherein the semiconductor device further comprises:
an epitaxy layer formed below the first portion of the first conductive via.
12 . The semiconductor device as claimed in claim 8 , wherein the first conductive via comprises a base portion having the base width, and the semiconductor device further comprises:
an epitaxy layer formed below the base portion of the first conductive via.
13 . The semiconductor device as claimed in claim 8 , wherein the second conductive via and the first portion are staggered in the first direction.
14 . The semiconductor device as claimed in claim 8 , wherein the first conductive via further comprises a second portion,
and the first portion and the second portion are located at two opposite sides of the second conductive via respectively in the first direction.
15 . The semiconductor device as claimed in claim 8 , wherein the second lateral surface is a curved surface, a flat surface and a combination thereof.
16 . A semiconductor device, comprising:
a substrate;
a plurality of OD structures formed on the substrate and arranged in a first direction;
a plurality of metal gates formed on the substrate and extending in the first direction;
a first conductive via formed on the substrate, located between two of the metal gates, extending in the first direction and comprising a first portion;
a second conductive via formed above and connected with the first conductive via; and
an epitaxy layer formed below the first conductive via;
wherein the first portion is staggered with the epitaxy layer and the second conductive via in the first direction;
wherein the first conductive via has a base width in a second direction, and a second ratio of the first width to the base width ranges between 0.5 and 0.99.
17 . The semiconductor device as claimed in claim 16 , wherein the first portion has a first width in the second direction, the second conductive via has a via width, the first width is less than the via width.
18 . The semiconductor device as claimed in claim 17 , wherein the base width is greater than the first width and the via width.
19 . The semiconductor device as claimed in claim 16 , wherein the first conductive via comprises a base portion having the base width, and the epitaxy layer is formed below the base portion of the first conductive via.
20 . The semiconductor device as claimed in claim 16 , wherein the first conductive via further comprises a second portion, and the first portion and the second portion are located at two opposite sides of the second conductive via respectively in the first direction.