Member for semiconductor manufacturing apparatus
A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.
1 . A member for semiconductor manufacturing apparatus, including an AlN ceramic substrate with a surface provided with projections for wafer placement,
wherein at least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region, the predetermined depth is 5 μm or less, and an oxygen content rate of the surface layer region is higher than an oxygen content rate of the base material region, and
wherein a nitrogen content rate of the surface layer region is lower than a nitrogen content rate of the base material region.
2 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein an oxygen content rate of the surface layer region is higher than or equal to 2.0 times an oxygen content rate of the base material region.
3 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein the surface layer region is blackened.
4 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein dross is not present in the surface layer region.
5 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein a mass ratio O/N of the surface layer region has a value higher than a mass ratio O/N of the base material region.
6 . The member for semiconductor manufacturing apparatus according to claim 5 ,
wherein the mass ratio O/N of the surface layer region is higher than or equal to 2.2 times the mass ratio O/N of the base material region.
7 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein a mass ratio Al/N of the surface layer region has a value higher than a mass ratio Al/N of the base material region.
8 . The member for semiconductor manufacturing apparatus according to claim 7 ,
wherein the mass ratio Al/N of the surface layer region is higher than or equal to 1.1 times the mass ratio Al/N of the base material region.
9 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein the area, provided with no projection, of the AlN ceramic substrate has the surface layer region and the base material region.