IP Library Granted Patent US 12,682,949
Granted Patent B2
US 12,682,949 · App. 18/583,404 · Granted Jul 14, 2026

Utilizing flash memory of storage devices experiencing power loss protection failures

Inventors: Linlin Zhou (Mountain View, CA); Millen Katyal (Santa Clara, CA); Zoltan Dewitt (Daly City, CA); Ethan Miller (Santa Cruz, CA); John Colgrove (Los Altos, CA)
Assignee: EVERPURE, INC.
G11C13/0035G06F3/0616G06F3/0653G06F3/0679
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,682,949
App. No.
18/583,404
Filed
Feb 21, 2024
Granted
Jul 14, 2026
Kind
B2
Art Unit
2111
USPC
714/718
Abstract

An indication that a die of the solid-state storage device has been marked as likely to fail based on a number of failed input/output (I/O) operations performed on the die satisfying a threshold may be received by a storage system controller from a solid-state storage device. In response to receiving the indication, one or more remedial actions associated with the die of the solid-state storage device may be performed.

Claims (64)

1 . A storage system comprising:

a plurality of solid-state storage devices; and

a storage system controller operatively coupled to the plurality of solid-state storage devices, the storage system controller comprising a processing device configured to:

receive, from a solid-state storage device of the plurality of solid-state storage devices, an indication that a die of the solid-state storage device has been marked as likely to fail based on a number of failed input/output (I/O) operations performed on the die satisfying a threshold; and

in response to receiving the indication, perform one or more remedial actions associated with the die of the solid-state storage device.

2 . The storage system of claim 1 , wherein the processing device is further configured to:

receive, from the solid-state storage device, a subsequent indication comprising results of testing data blocks of the die that has been marked as likely to fail; and

allocate one or more of the data blocks for storing data based on the results of the testing indicating that the one or more of the data blocks are able to reliably store data, the one or more of the data blocks being less than a total number of data blocks of the die.

3 . The storage system of claim 1 , wherein to perform the one or more remedial actions associated with the die, the processing device is further configured to:

place the die of the solid-state storage device in a read only mode.

4 . The storage system of claim 1 , wherein to perform the one or more remedial actions associated with the die, the processing device is further configured to:

receive, from the solid-state storage device, data read from the die; and

store the data read from the die in a different location at one or more of the plurality of solid-state storage devices.

5 . The storage system of claim 1 , wherein to perform the one or more remedial actions associated with the die, the processing device is further configured to:

receive, from the solid-state storage device, data stored in the die that was rebuilt by the solid-state storage device; and

store the rebuilt data from the die in a different location at one or more of the plurality of solid-state storage devices.

6 . The storage system of claim 1 , wherein to perform the one or more remedial actions associated with the die, the processing device is further configured to:

receive, from the solid-state storage device, a subsequent indication that the solid-state storage device was unable to rebuild data stored in the die;

rebuild the data stored in the die using other data and parity data stored at one or more of the plurality of solid-state storage devices; and

store the rebuilt data at a different location at one or more of the plurality of solid-state storage devices.

7 . The storage system of claim 1 , wherein to perform the one or more remedial actions associated with the die, the processing device is further configured to:

receive a write request to store other data at the solid-state storage device;

transmit, to the solid-state storage device, a command to pause recovery of data stored at the die; and

in response to the other data being stored at the solid-state storage device, transmit, to the solid-state storage device, a subsequent command to resume the recovery of the data stored at the die.

8 . A method, comprising:

receiving, by a storage system controller from a solid-state storage device of a plurality of solid-state storage devices, an indication that a die of the solid-state storage device has been marked as likely to fail based on a number of failed input/output (I/O) operations performed on the die satisfying a threshold; and

in response to receiving the indication, performing one or more remedial actions associated with the die of the solid-state storage device.

9 . The method of claim 8 , further comprising:

receiving, from the solid-state storage device, a subsequent indication comprising results of testing data blocks of the die that has been marked as likely to fail; and

allocating one or more of the data blocks for storing data based on the results of the testing indicating that the one or more of the data blocks are able to reliably store data, the one or more of the data blocks being less than a total number of data blocks of the die.

10 . The method of claim 8 , wherein performing the one or more remedial actions associated with the die comprises:

placing the die of the solid-state storage device in a read only mode.

11 . The method of claim 8 , wherein performing the one or more remedial actions associated with the die comprises:

receiving, from the solid-state storage device, data read from the die; and

storing the data read from the die in a different location at one or more of the plurality of solid-state storage devices.

12 . The method of claim 8 , wherein performing the one or more remedial actions associated with the die comprises:

receiving, from the solid-state storage device, data stored in the die that was rebuilt by the solid-state storage device; and

storing the rebuilt data from the die in a different location at one or more of the plurality of solid-state storage devices.

13 . The method of claim 8 , wherein performing the one or more remedial actions associated with the die comprises:

receiving, from the solid-state storage device, a subsequent indication that the solid-state storage device was unable to rebuild data stored in the die;

rebuilding the data stored in the die using other data and parity data stored at one or more of the plurality of solid-state storage devices; and

storing the rebuilt data at a different location at one or more of the plurality of solid-state storage devices.

14 . The method of claim 8 , wherein performing the one or more remedial actions associated with the die comprises:

receiving a write request to store other data at the solid-state storage device; and

transmitting, to the solid-state storage device, a command to pause recovery of data stored at the die; and

in response to the other data being stored at the solid-state storage device, transmitting, to the solid-state storage device, a subsequent command to resume the recovery of the data stored at the die.

15 . A non-transitory computer readable storage medium storing instructions, which when executed, cause a processing device of a storage system controller to:

receive, from a solid-state storage device of a plurality of solid-state storage devices, an indication that a die of the solid-state storage device has been marked as likely to fail based on a number of failed input/output (I/O) operations performed on the die satisfying a threshold; and

in response to receiving the indication, perform one or more remedial actions associated with the die of the solid-state storage device.

16 . The non-transitory computer readable storage medium of claim 15 , wherein the processing device is further to:

receive, from the solid-state storage device, a subsequent indication comprising results of testing data blocks of the die that has been marked as likely to fail; and

allocate one or more of the data blocks for storing data based on the results of the testing indicating that the one or more of the data blocks are able to reliably store data, the one or more of the data blocks being less than a total number of data blocks of the die.

17 . The non-transitory computer readable storage medium of claim 15 , wherein to perform the one or more remedial actions, the processing device to:

place the die of the solid-state storage device in a read only mode.

18 . The non-transitory computer readable storage medium of claim 15 , wherein to perform the one or more remedial actions, the processing device to:

receive, from the solid-state storage device, data read from the die; and

store the data read from the die in a different location at one or more of the plurality of solid-state storage devices.

19 . The non-transitory computer readable storage medium of claim 15 , wherein to perform the one or more remedial actions, the processing device to:

receive, from the solid-state storage device, data stored in the die that was rebuilt by the solid-state storage device; and

store the rebuilt data from the die in a different location at one or more of the plurality of solid-state storage devices.

20 . The non-transitory computer readable storage medium of claim 15 , wherein to perform the one or more remedial actions, the processing device to:

receive, from the solid-state storage device, a subsequent indication that the solid-state storage device was unable to rebuild data stored in the die;

rebuild the data stored in the die using other data and parity data stored at one or more of the plurality of solid-state storage devices; and

store the rebuilt data at a different location at one or more of the plurality of solid-state storage devices.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2024
From: ZHOU, LINLIN; KATYAL, MILLEN; DEWITT, ZOLTAN; MILLER, ETHAN; COLGROVE, JOHN
To: PURE STORAGE, INC.
Reel/Frame 066525/0729 →
Continuity (4)
Continuation In Part 18522037 · Nov 28, 2023
Continuation 16506872 · Jul 9, 2019
Provisional Application 62696728 · Jul 11, 2018
Related Publication 20240194259A1 · Jun 13, 2024
References Cited (400)
US 5390327A · Lubbers et al. · 1995 [cited by applicant]
US 5450581A · Bergen et al. · 1995 [cited by applicant]
US 5479653A · Jones · 1995 [cited by applicant]
US 5488731A · Mendelsohn · 1996 [cited by applicant]
US 5504858A · Ellis et al. · 1996 [cited by applicant]
US 5564113A · Bergen et al. · 1996 [cited by applicant]
US 5574882A · Menon et al. · 1996 [cited by applicant]
US 5649093A · Hanko et al. · 1997 [cited by applicant]
US 5883909A · DeKoning et al. · 1999 [cited by applicant]
US 6000010A · Legg · 1999 [cited by applicant]
US 6260156B1 · Garvin et al. · 2001 [cited by applicant]
US 6269453B1 · Krantz · 2001 [cited by applicant]
US 6275898B1 · DeKoning · 2001 [cited by applicant]
US 6453428B1 · Stephenson · 2002 [cited by applicant]
US 6523087B2 · Busser · 2003 [cited by applicant]
US 6535417B2 · Tsuda et al. · 2003 [cited by applicant]
US 6643748B1 · Wieland · 2003 [cited by applicant]
US 6725392B1 · Frey et al. · 2004 [cited by applicant]
US 6763455B2 · Hall · 2004 [cited by applicant]
US 6836816B2 · Kendall · 2004 [cited by applicant]
US 6985995B2 · Holland et al. · 2006 [cited by applicant]
US 7032125B2 · Holt et al. · 2006 [cited by applicant]
US 7047358B2 · Lee et al. · 2006 [cited by applicant]
US 7051155B2 · Talagala et al. · 2006 [cited by applicant]
US 7055058B2 · Lee et al. · 2006 [cited by applicant]
US 7065617B2 · Wang · 2006 [cited by applicant]
US 7069383B2 · Yamamoto et al. · 2006 [cited by applicant]
US 7076606B2 · Orsley · 2006 [cited by applicant]
US 7107480B1 · Moshayedi et al. · 2006 [cited by applicant]
US 7159150B2 · Kenchammana-Hosekote et al. · 2007 [cited by applicant]
US 7162575B2 · Dalal et al. · 2007 [cited by applicant]
US 7164608B2 · Lee · 2007 [cited by applicant]
US 7188270B1 · Nanda et al. · 2007 [cited by applicant]
US 7334156B2 · Land et al. · 2008 [cited by applicant]
US 7370220B1 · Nguyen et al. · 2008 [cited by applicant]
US 7386666B1 · Beauchamp et al. · 2008 [cited by applicant]
US 7398285B2 · Kisley · 2008 [cited by applicant]
US 7424498B1 · Patterson · 2008 [cited by applicant]
US 7424592B1 · Karr et al. · 2008 [cited by applicant]
US 7444532B2 · Masuyama et al. · 2008 [cited by applicant]
US 7480658B2 · Heinla et al. · 2009 [cited by applicant]
US 7484056B2 · Madnani et al. · 2009 [cited by applicant]
US 7484057B1 · Madnani et al. · 2009 [cited by applicant]
US 7484059B1 · Ofer et al. · 2009 [cited by applicant]
US 7536506B2 · Ashmore et al. · 2009 [cited by applicant]
US 7558859B2 · Kasiolas et al. · 2009 [cited by applicant]
US 7565446B2 · Talagala et al. · 2009 [cited by applicant]
US 7613947B1 · Coatney et al. · 2009 [cited by applicant]
US 7634617B2 · Misra · 2009 [cited by applicant]
US 7634618B2 · Misra · 2009 [cited by applicant]
US 7681104B1 · Sim-Tang et al. · 2010 [cited by applicant]
US 7681105B1 · Sim-Tang et al. · 2010 [cited by applicant]
US 7681109B2 · Litsyn et al. · 2010 [cited by applicant]
US 7730257B2 · Franklin · 2010 [cited by applicant]
US 7730258B1 · Smith et al. · 2010 [cited by applicant]
US 7730274B1 · Usgaonkar · 2010 [cited by applicant]
US 7743276B2 · Jacobson et al. · 2010 [cited by applicant]
US 7752489B2 · Deenadhayalan et al. · 2010 [cited by applicant]
US 7757038B2 · Kitahara · 2010 [cited by applicant]
US 7757059B1 · Ofer et al. · 2010 [cited by applicant]
US 7778960B1 · Chatterjee et al. · 2010 [cited by applicant]
US 7783955B2 · Murin · 2010 [cited by applicant]
US 7814272B2 · Barrall et al. · 2010 [cited by applicant]
US 7814273B2 · Barrall · 2010 [cited by applicant]
US 7818531B2 · Barrall · 2010 [cited by applicant]
US 7827351B2 · Suetsugu et al. · 2010 [cited by applicant]
US 7827439B2 · Mathew et al. · 2010 [cited by applicant]
US 7831768B2 · Ananthamurthy et al. · 2010 [cited by applicant]
US 7856583B1 · Smith · 2010 [cited by applicant]
US 7870105B2 · Arakawa et al. · 2011 [cited by applicant]
US 7873878B2 · Belluomini et al. · 2011 [cited by applicant]
US 7885938B1 · Greene et al. · 2011 [cited by applicant]
US 7886111B2 · Klemm et al. · 2011 [cited by applicant]
US 7908448B1 · Chatterjee et al. · 2011 [cited by applicant]
US 7916538B2 · Jeon et al. · 2011 [cited by applicant]
US 7921268B2 · Jakob · 2011 [cited by applicant]
US 7930499B2 · Duchesne · 2011 [cited by applicant]
US 7941697B2 · Mathew et al. · 2011 [cited by applicant]
US 7958303B2 · Shuster · 2011 [cited by applicant]
US 7971129B2 · Watson et al. · 2011 [cited by applicant]
US 7975115B2 · Wayda et al. · 2011 [cited by applicant]
US 7984016B2 · Kisley · 2011 [cited by applicant]
US 7991822B2 · Bish et al. · 2011 [cited by applicant]
US 8006126B2 · Deenadhayalan et al. · 2011 [cited by applicant]
US 8010485B1 · Chatterjee et al. · 2011 [cited by applicant]
US 8010829B1 · Chatterjee et al. · 2011 [cited by applicant]
US 8020047B2 · Courtney · 2011 [cited by applicant]
US 8046548B1 · Chatterjee et al. · 2011 [cited by applicant]
US 8051361B2 · Sim-Tang et al. · 2011 [cited by applicant]
US 8051362B2 · Li et al. · 2011 [cited by applicant]
US 8074038B2 · Lionetti et al. · 2011 [cited by applicant]
US 8082393B2 · Galloway et al. · 2011 [cited by applicant]
US 8086603B2 · Nasre et al. · 2011 [cited by applicant]
US 8086634B2 · Mimatsu · 2011 [cited by applicant]
US 8086911B1 · Taylor · 2011 [cited by applicant]
US 8090837B2 · Shin et al. · 2012 [cited by applicant]
US 8108502B2 · Tabbara et al. · 2012 [cited by applicant]
US 8117388B2 · Jernigan, IV · 2012 [cited by applicant]
US 8117521B2 · Parker et al. · 2012 [cited by applicant]
US 8140821B1 · Raizen et al. · 2012 [cited by applicant]
US 8145838B1 · Miller et al. · 2012 [cited by applicant]
US 8145840B2 · Koul et al. · 2012 [cited by applicant]
US 8175012B2 · Chu et al. · 2012 [cited by applicant]
US 8176360B2 · Frost et al. · 2012 [cited by applicant]
US 8176405B2 · Hafner et al. · 2012 [cited by applicant]
US 8180855B2 · Aiello et al. · 2012 [cited by applicant]
US 8200922B2 · McKean et al. · 2012 [cited by applicant]
US 8209469B2 · Carpenter et al. · 2012 [cited by applicant]
US 8225006B1 · Karamcheti · 2012 [cited by applicant]
US 8239618B2 · Kotzur et al. · 2012 [cited by applicant]
US 8244999B1 · Chatterjee et al. · 2012 [cited by applicant]
US 8261016B1 · Goel · 2012 [cited by applicant]
US 8271455B2 · Kesselman · 2012 [cited by applicant]
US 8285686B2 · Kesselman · 2012 [cited by applicant]
US 8305811B2 · Jeon · 2012 [cited by applicant]
US 8315999B2 · Chatley et al. · 2012 [cited by applicant]
US 8327080B1 · Der · 2012 [cited by applicant]
US 8335769B2 · Kesselman · 2012 [cited by applicant]
US 8341118B2 · Drobychev et al. · 2012 [cited by applicant]
US 8351290B1 · Huang et al. · 2013 [cited by applicant]
US 8364920B1 · Parkison et al. · 2013 [cited by applicant]
US 8365041B2 · Olbrich et al. · 2013 [cited by applicant]
US 8375146B2 · Sinclair · 2013 [cited by applicant]
US 8397016B2 · Talagala et al. · 2013 [cited by applicant]
US 8402152B2 · Duran · 2013 [cited by applicant]
US 8412880B2 · Leibowitz et al. · 2013 [cited by applicant]
US 8423739B2 · Ash et al. · 2013 [cited by applicant]
US 8429307B1 · Faibish · 2013 [cited by examiner]
US 8429436B2 · Fillingim et al. · 2013 [cited by applicant]
US 8452928B1 · Ofer et al. · 2013 [cited by applicant]
US 8473698B2 · Lionetti et al. · 2013 [cited by applicant]
US 8473778B2 · Simitci et al. · 2013 [cited by applicant]
US 8473815B2 · Chung et al. · 2013 [cited by applicant]
US 8479037B1 · Chatterjee et al. · 2013 [cited by applicant]
US 8484414B2 · Sugimoto et al. · 2013 [cited by applicant]
US 8498967B1 · Chatterjee et al. · 2013 [cited by applicant]
US 8504797B2 · Mimatsu · 2013 [cited by applicant]
US 8522073B2 · Cohen · 2013 [cited by applicant]
US 8533408B1 · Madnani et al. · 2013 [cited by applicant]
US 8533527B2 · Daikokuya et al. · 2013 [cited by applicant]
US 8539177B1 · Madnani et al. · 2013 [cited by applicant]
US 8544029B2 · Bakke et al. · 2013 [cited by applicant]
US 8549224B1 · Zeryck et al. · 2013 [cited by applicant]
US 8583861B1 · Ofer et al. · 2013 [cited by applicant]
US 8589625B2 · Colgrove et al. · 2013 [cited by applicant]
US 8595455B2 · Chatterjee et al. · 2013 [cited by applicant]
US 8615599B1 · Takefman et al. · 2013 [cited by applicant]
US 8627136B2 · Shankar et al. · 2014 [cited by applicant]
US 8627138B1 · Clark et al. · 2014 [cited by applicant]
US 8639669B1 · Douglis et al. · 2014 [cited by applicant]
US 8639863B1 · Kanapathippillai et al. · 2014 [cited by applicant]
US 8640000B1 · Cypher · 2014 [cited by applicant]
US 8650343B1 · Kanapathippillai et al. · 2014 [cited by applicant]
US 8660131B2 · Vermunt et al. · 2014 [cited by applicant]
US 8661218B1 · Piszczek et al. · 2014 [cited by applicant]
US 8671072B1 · Shah et al. · 2014 [cited by applicant]
US 8689042B1 · Kanapathippillai et al. · 2014 [cited by applicant]
US 8706694B2 · Chatterjee et al. · 2014 [cited by applicant]
US 8706914B2 · Duchesneau · 2014 [cited by applicant]
US 8706932B1 · Kanapathippillai et al. · 2014 [cited by applicant]
US 8712963B1 · Douglis et al. · 2014 [cited by applicant]
US 8713405B2 · Healey, Jr. et al. · 2014 [cited by applicant]
US 8719621B1 · Karmarkar · 2014 [cited by applicant]
US 8725730B2 · Keeton et al. · 2014 [cited by applicant]
US 8751859B2 · Becker-Szendy et al. · 2014 [cited by applicant]
US 8756387B2 · Frost et al. · 2014 [cited by applicant]
US 8762793B2 · Grube et al. · 2014 [cited by applicant]
US 8769232B2 · Suryabudi et al. · 2014 [cited by applicant]
US 8775858B2 · Gower et al. · 2014 [cited by applicant]
US 8775868B2 · Colgrove et al. · 2014 [cited by applicant]
US 8788913B1 · Xin et al. · 2014 [cited by applicant]
US 8793447B2 · Usgaonkar et al. · 2014 [cited by applicant]
US 8799746B2 · Baker et al. · 2014 [cited by applicant]
US 8819311B2 · Liao · 2014 [cited by applicant]
US 8819383B1 · Jobanputra et al. · 2014 [cited by applicant]
US 8822155B2 · Sukumar et al. · 2014 [cited by applicant]
US 8824261B1 · Miller et al. · 2014 [cited by applicant]
US 8832528B2 · Thatcher et al. · 2014 [cited by applicant]
US 8838541B2 · Camble et al. · 2014 [cited by applicant]
US 8838892B2 · Li · 2014 [cited by applicant]
US 8843700B1 · Salessi et al. · 2014 [cited by applicant]
US 8850108B1 · Hayes et al. · 2014 [cited by applicant]
US 8850288B1 · Lazier et al. · 2014 [cited by applicant]
US 8856593B2 · Eckhardt et al. · 2014 [cited by applicant]
US 8856619B1 · Cypher · 2014 [cited by applicant]
US 8862617B2 · Kesselman · 2014 [cited by applicant]
US 8862847B2 · Feng et al. · 2014 [cited by applicant]
US 8862928B2 · Xavier et al. · 2014 [cited by applicant]
US 8868825B1 · Hayes et al. · 2014 [cited by applicant]
US 8874836B1 · Hayes et al. · 2014 [cited by applicant]
US 8880793B2 · Nagineni · 2014 [cited by applicant]
US 8880825B2 · Lionetti et al. · 2014 [cited by applicant]
US 8886778B2 · Nedved et al. · 2014 [cited by applicant]
US 8898383B2 · Yamamoto et al. · 2014 [cited by applicant]
US 8898388B1 · Kimmel · 2014 [cited by applicant]
US 8904231B2 · Coatney et al. · 2014 [cited by applicant]
US 8918478B2 · Ozzie et al. · 2014 [cited by applicant]
US 8930307B2 · Colgrove et al. · 2015 [cited by applicant]
US 8930633B2 · Amit et al. · 2015 [cited by applicant]
US 8943357B2 · Atzmony · 2015 [cited by applicant]
US 8949502B2 · McKnight et al. · 2015 [cited by applicant]
US 8959110B2 · Smith et al. · 2015 [cited by applicant]
US 8959388B1 · Kuang et al. · 2015 [cited by applicant]
US 8972478B1 · Storer et al. · 2015 [cited by applicant]
US 8972779B2 · Lee et al. · 2015 [cited by applicant]
US 8977597B2 · Ganesh et al. · 2015 [cited by applicant]
US 8996828B2 · Kalos et al. · 2015 [cited by applicant]
US 9003144B1 · Hayes et al. · 2015 [cited by applicant]
US 9009724B2 · Gold et al. · 2015 [cited by applicant]
US 9021053B2 · Bernbo et al. · 2015 [cited by applicant]
US 9021215B2 · Meir et al. · 2015 [cited by applicant]
US 9025393B2 · Wu et al. · 2015 [cited by applicant]
US 9037921B1 · Brooker · 2015 [cited by examiner]
US 9043372B2 · Makkar et al. · 2015 [cited by applicant]
US 9047214B1 · Northcott · 2015 [cited by applicant]
US 9053808B2 · Sprouse et al. · 2015 [cited by applicant]
US 9058155B2 · Cepulis et al. · 2015 [cited by applicant]
US 9063895B1 · Madnani et al. · 2015 [cited by applicant]
US 9063896B1 · Madnani et al. · 2015 [cited by applicant]
US 9098211B1 · Madnani et al. · 2015 [cited by applicant]
US 9110898B1 · Chamness et al. · 2015 [cited by applicant]
US 9110964B1 · Shilane et al. · 2015 [cited by applicant]
US 9116819B2 · Cope et al. · 2015 [cited by applicant]
US 9117536B2 · Yoon et al. · 2015 [cited by applicant]
US 9122401B2 · Zaltsman et al. · 2015 [cited by applicant]
US 9123422B2 · Yu et al. · 2015 [cited by applicant]
US 9124300B2 · Sharon et al. · 2015 [cited by applicant]
US 9134908B2 · Horn et al. · 2015 [cited by applicant]
US 9153337B2 · Sutardja · 2015 [cited by applicant]
US 9158472B2 · Kesselman et al. · 2015 [cited by applicant]
US 9159422B1 · Lee et al. · 2015 [cited by applicant]
US 9164891B2 · Karamcheti et al. · 2015 [cited by applicant]
US 9183136B2 · Kawamura et al. · 2015 [cited by applicant]
US 9189650B2 · Jaye et al. · 2015 [cited by applicant]
US 9201733B2 · Verma et al. · 2015 [cited by applicant]
US 9207876B2 · Shu et al. · 2015 [cited by applicant]
US 9229656B1 · Contreras et al. · 2016 [cited by applicant]
US 9229810B2 · He et al. · 2016 [cited by applicant]
US 9235475B1 · Shilane et al. · 2016 [cited by applicant]
US 9244626B2 · Shah et al. · 2016 [cited by applicant]
US 9250999B1 · Barroso · 2016 [cited by applicant]
US 9251066B2 · Colgrove et al. · 2016 [cited by applicant]
US 9268648B1 · Barash et al. · 2016 [cited by applicant]
US 9268806B1 · Kesselman · 2016 [cited by applicant]
US 9280678B2 · Redberg · 2016 [cited by applicant]
US 9286002B1 · Karamcheti et al. · 2016 [cited by applicant]
US 9292214B2 · Kalos et al. · 2016 [cited by applicant]
US 9298760B1 · Li et al. · 2016 [cited by applicant]
US 9304908B1 · Karamcheti et al. · 2016 [cited by applicant]
US 9311969B2 · Sharon et al. · 2016 [cited by applicant]
US 9311970B2 · Sharon et al. · 2016 [cited by applicant]
US 9323663B2 · Karamcheti et al. · 2016 [cited by applicant]
US 9323667B2 · Bennett · 2016 [cited by applicant]
US 9323681B2 · Apostolides et al. · 2016 [cited by applicant]
US 9335942B2 · Kumar et al. · 2016 [cited by applicant]
US 9348538B2 · Mallaiah et al. · 2016 [cited by applicant]
US 9355022B2 · Ravimohan et al. · 2016 [cited by applicant]
US 9384082B1 · Lee et al. · 2016 [cited by applicant]
US 9384252B2 · Akirav et al. · 2016 [cited by applicant]
US 9389958B2 · Sundaram et al. · 2016 [cited by applicant]
US 9390019B2 · Patterson et al. · 2016 [cited by applicant]
US 9395922B2 · Nishikido et al. · 2016 [cited by applicant]
US 9396202B1 · Drobychev et al. · 2016 [cited by applicant]
US 9400828B2 · Kesselman et al. · 2016 [cited by applicant]
US 9405478B2 · Koseki et al. · 2016 [cited by applicant]
US 9411685B2 · Lee · 2016 [cited by applicant]
US 9417960B2 · Cai et al. · 2016 [cited by applicant]
US 9417963B2 · He et al. · 2016 [cited by applicant]
US 9430250B2 · Hamid et al. · 2016 [cited by applicant]
US 9430542B2 · Akirav et al. · 2016 [cited by applicant]
US 9432541B2 · Ishida · 2016 [cited by applicant]
US 9454434B2 · Sundaram et al. · 2016 [cited by applicant]
US 9471579B1 · Natanzon · 2016 [cited by applicant]
US 9477554B2 · Hayes et al. · 2016 [cited by applicant]
US 9477632B2 · Du · 2016 [cited by applicant]
US 9501398B2 · George et al. · 2016 [cited by applicant]
US 9525737B2 · Friedman · 2016 [cited by applicant]
US 9529542B2 · Friedman et al. · 2016 [cited by applicant]
US 9535631B2 · Fu et al. · 2017 [cited by applicant]
US 9552291B2 · Munetoh et al. · 2017 [cited by applicant]
US 9552299B2 · Stalzer · 2017 [cited by applicant]
US 9563517B1 · Natanzon et al. · 2017 [cited by applicant]
US 9588698B1 · Karamcheti et al. · 2017 [cited by applicant]
US 9588712B2 · Kalos et al. · 2017 [cited by applicant]
US 9594652B1 · Sathiamoorthy et al. · 2017 [cited by applicant]
US 9600193B2 · Ahrens et al. · 2017 [cited by applicant]
US 9619321B1 · Haratsch et al. · 2017 [cited by applicant]
US 9619430B2 · Kannan et al. · 2017 [cited by applicant]
US 9645754B2 · Li et al. · 2017 [cited by applicant]
US 9652160B1 · Piszczek · 2017 [cited by examiner]
US 9667720B1 · Bent et al. · 2017 [cited by applicant]
US 9710535B2 · Aizman et al. · 2017 [cited by applicant]
US 9733840B2 · Karamcheti et al. · 2017 [cited by applicant]
US 9734225B2 · Akirav et al. · 2017 [cited by applicant]
US 9740403B2 · Storer et al. · 2017 [cited by applicant]
US 9740700B1 · Chopra et al. · 2017 [cited by applicant]
US 9740762B2 · Horowitz et al. · 2017 [cited by applicant]
US 9747319B2 · Bestler et al. · 2017 [cited by applicant]
US 9747320B2 · Kesselman · 2017 [cited by applicant]
US 9767130B2 · Bestler et al. · 2017 [cited by applicant]
US 9781227B2 · Friedman et al. · 2017 [cited by applicant]
US 9785498B2 · Misra et al. · 2017 [cited by applicant]
US 9798486B1 · Singh · 2017 [cited by applicant]
US 9804925B1 · Carmi et al. · 2017 [cited by applicant]
US 9811285B1 · Karamcheti et al. · 2017 [cited by applicant]
US 9811546B1 · Bent et al. · 2017 [cited by applicant]
US 9818478B2 · Chung · 2017 [cited by applicant]
US 9829066B2 · Thomas et al. · 2017 [cited by applicant]
US 9836245B2 · Hayes et al. · 2017 [cited by applicant]
US 9858148B2 · Borlick · 2018 [cited by examiner]
US 9891854B2 · Munetoh et al. · 2018 [cited by applicant]
US 9891860B1 · Delgado et al. · 2018 [cited by applicant]
US 9892005B2 · Kedem et al. · 2018 [cited by applicant]
US 9892186B2 · Akirav et al. · 2018 [cited by applicant]
US 9904589B1 · Donlan et al. · 2018 [cited by applicant]
US 9904717B2 · Anglin et al. · 2018 [cited by applicant]
US 9910748B2 · Pan · 2018 [cited by applicant]
US 9910904B2 · Anglin et al. · 2018 [cited by applicant]
US 9934237B1 · Shilane et al. · 2018 [cited by applicant]
US 9940065B2 · Kalos et al. · 2018 [cited by applicant]
US 9946604B1 · Glass · 2018 [cited by applicant]
US 9952809B2 · Shah · 2018 [cited by applicant]
US 9959167B1 · Donlan et al. · 2018 [cited by applicant]
US 9965539B2 · D'Halluin et al. · 2018 [cited by applicant]
US 9998539B1 · Brock et al. · 2018 [cited by applicant]
US 10007457B2 · Hayes et al. · 2018 [cited by applicant]
US 10013177B2 · Liu et al. · 2018 [cited by applicant]
US 10013311B2 · Sundaram et al. · 2018 [cited by applicant]
US 10019314B2 · Yang et al. · 2018 [cited by applicant]
US 10019317B2 · Usvyatsky et al. · 2018 [cited by applicant]
US 10031703B1 · Natanzon et al. · 2018 [cited by applicant]
US 10061512B2 · Lin · 2018 [cited by applicant]
US 10073626B2 · Karamcheti et al. · 2018 [cited by applicant]
US 10082985B2 · Hayes et al. · 2018 [cited by applicant]
US 10089012B1 · Chen et al. · 2018 [cited by applicant]
US 10089174B2 · Yang · 2018 [cited by applicant]
US 10089176B1 · Donlan et al. · 2018 [cited by applicant]
US 10108819B1 · Donlan et al. · 2018 [cited by applicant]
US 10146787B2 · Bashyam et al. · 2018 [cited by applicant]
US 10152268B1 · Chakraborty et al. · 2018 [cited by applicant]
US 10157098B2 · Yang et al. · 2018 [cited by applicant]
US 10162704B1 · Kirschner et al. · 2018 [cited by applicant]
US 10180875B2 · Klein · 2019 [cited by applicant]
US 10185730B2 · Bestler et al. · 2019 [cited by applicant]
US 10235065B1 · Miller et al. · 2019 [cited by applicant]
US 10289336B1 · Liu · 2019 [cited by examiner]
US 10324639B2 · Seo · 2019 [cited by applicant]
US 10567406B2 · Astigarraga et al. · 2020 [cited by applicant]
US 10635537B2 · Borlick · 2020 [cited by examiner]
US 10705931B2 · Yang · 2020 [cited by examiner]
US 10846137B2 · Vallala et al. · 2020 [cited by applicant]
US 10877683B2 · Wu et al. · 2020 [cited by applicant]
US 11076509B2 · Alissa et al. · 2021 [cited by applicant]
US 11106810B2 · Natanzon et al. · 2021 [cited by applicant]
US 11194707B2 · Stalzer · 2021 [cited by applicant]
US 20020144059A1 · Kendall · 2002 [cited by applicant]
US 20030105984A1 · Masuyama et al. · 2003 [cited by applicant]
US 20030110205A1 · Johnson · 2003 [cited by applicant]
US 20040161086A1 · Buntin et al. · 2004 [cited by applicant]
US 20050001652A1 · Malik et al. · 2005 [cited by applicant]
US 20050076228A1 · Davis et al. · 2005 [cited by applicant]
US 20050235132A1 · Karr et al. · 2005 [cited by applicant]
US 20050278460A1 · Shin et al. · 2005 [cited by applicant]
US 20050283649A1 · Turner et al. · 2005 [cited by applicant]
US 20060015683A1 · Ashmore et al. · 2006 [cited by applicant]
US 20060075189A1 · Hood · 2006 [cited by examiner]
US 20060114930A1 · Lucas et al. · 2006 [cited by applicant]
US 20060174157A1 · Barrall et al. · 2006 [cited by applicant]
US 20060248294A1 · Nedved et al. · 2006 [cited by applicant]
US 20070079068A1 · Draggon · 2007 [cited by applicant]
US 20070174720A1 · Kubo · 2007 [cited by examiner]
US 20070214194A1 · Reuter · 2007 [cited by applicant]
US 20070214314A1 · Reuter · 2007 [cited by applicant]
US 20070234016A1 · Davis et al. · 2007 [cited by applicant]
US 20070268905A1 · Baker et al. · 2007 [cited by applicant]
US 20080080709A1 · Michtchenko et al. · 2008 [cited by applicant]
US 20080107274A1 · Worthy · 2008 [cited by applicant]
US 20080256141A1 · Wayda et al. · 2008 [cited by applicant]
US 20080295118A1 · Liao · 2008 [cited by applicant]
US 20090077208A1 · Nguyen et al. · 2009 [cited by applicant]
US 20090138654A1 · Sutardja · 2009 [cited by applicant]
US 20090216910A1 · Duchesneau · 2009 [cited by applicant]
US 20090216920A1 · Lauterbach et al. · 2009 [cited by applicant]
US 20100017444A1 · Chatterjee et al. · 2010 [cited by applicant]
US 20100042636A1 · Lu · 2010 [cited by applicant]
US 20100094806A1 · Apostolides et al. · 2010 [cited by applicant]
US 20100115070A1 · Missimilly · 2010 [cited by applicant]
US 20100125695A1 · Wu et al. · 2010 [cited by applicant]
US 20100162076A1 · Sim-Tang et al. · 2010 [cited by applicant]
US 20100169707A1 · Mathew et al. · 2010 [cited by applicant]
US 20100174576A1 · Naylor · 2010 [cited by applicant]
US 20100268908A1 · Ouyang et al. · 2010 [cited by applicant]
US 20100306500A1 · Mimatsu · 2010 [cited by applicant]
US 20110035540A1 · Fitzgerald et al. · 2011 [cited by applicant]
US 20110040925A1 · Frost et al. · 2011 [cited by applicant]
US 20110060927A1 · Fillingim et al. · 2011 [cited by applicant]
US 20110119462A1 · Leach et al. · 2011 [cited by applicant]
US 20110219170A1 · Frost et al. · 2011 [cited by applicant]
US 20110238625A1 · Hamaguchi et al. · 2011 [cited by applicant]
US 20110264843A1 · Haines et al. · 2011 [cited by applicant]