IP Library Granted Patent US 12,690,418
Granted Patent B2
US 12,690,418 · App. 18/628,136 · Granted Jul 21, 2026

Apparatus for clamping a substrate on a mono-polar electrostatic chuck for deposition of photoresist films

Inventors: Sushim Koshti (West Linn, OR); Vijay Parkhe (San Jose, CA); Nitin Bharadwaj Satyavolu (Santa Clara, CA); Venugopal Vellanki (San Jose, CA); Niranjana Balesan (Fremont, CA); Ashutosh Sawant (Santa Clara, CA)
Assignee: Applied Materials, Inc.
H10P72/722C23C16/4585C23C16/4586H01J37/32642H01J37/32724H10P72/7612H10P72/7616H10P72/7624H01J2237/3321H01J2237/3323
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Quick Facts
Patent No.
US 12,690,418
App. No.
18/628,136
Granted
Jul 21, 2026
Kind
B2
Abstract

Apparatuses for clamping a substrate on a mono-polar electrostatic chuck for deposition of photoresist films are disclosed. In an example, a lift-pin assembly includes a first metal spring, a first metal above and coupled to the first metal spring, a second metal spring above and coupled to the first metal, a second metal above and coupled to the second metal spring, and a ceramic above and coupled to the second metal.

Claims (42)

1 . A lift-pin assembly, comprising:

a first metal spring;

a first metal above and coupled to the first metal spring;

a ceramic above and coupled to the first metal; and

a second metal spring above and coupled to the first metal, and a second metal above and coupled to the second metal spring, wherein the ceramic is above and coupled to the second metal.

2 . The lift pin assembly of claim 1 , wherein the first metal spring provides a consistent ground path for the lift-pin assembly.

3 . The lift pin assembly of claim 1 , wherein the first metal spring provides compliance for the lift-pin assembly.

4 . The lift pin assembly of claim 1 , wherein the first metal spring provides guided linear motion for the lift-pin assembly.

5 . The lift pin assembly of claim 1 , wherein the second metal spring provides contact pressure for the lift-pin assembly.

6 . The lift pin assembly of claim 1 , wherein the ceramic is for supporting a wafer, and wherein the ceramic comprises SiC.

7 . A mono-polar electrostatic chuck, comprising:

a chuck body;

a plurality of lift-pin holes in the chuck body; and

a plurality of lift-pins, individual ones of the plurality of lift-pins in corresponding ones of the plurality of lift-pin holes, wherein each of the plurality of lift-pins comprises:

a first metal spring;

a first metal above and coupled to the first metal spring;

a second metal spring above and coupled to the first metal;

a second metal above and coupled to the second metal spring; and

a ceramic above and coupled to the second metal.

8 . The mono-polar electrostatic chuck of claim 7 , wherein the first metal spring of each of the plurality of lift-pins provides a consistent ground path for the lift-pin assembly.

9 . The mono-polar electrostatic chuck of claim 7 , wherein the first metal spring of each of the plurality of lift-pins provides compliance for the lift-pin assembly.

10 . The mono-polar electrostatic chuck of claim 7 , wherein the first metal spring of each of the plurality of lift-pins provides guided linear motion for the lift-pin assembly.

11 . The mono-polar electrostatic chuck of claim 7 , wherein the second metal spring of each of the plurality of lift-pins provides back pressure for the lift-pin assembly.

12 . The mono-polar electrostatic chuck of claim 7 , wherein the second metal spring of each of the plurality of lift-pins provides contact pressure for the lift-pin assembly.

13 . The mono-polar electrostatic chuck of claim 7 , wherein the ceramic of each of the plurality of lift-pins is for supporting a wafer, and wherein the ceramic comprises SiC.

14 . A system, comprising:

a chamber;

a plasma source within or coupled to the chamber; and

a mono-polar electrostatic chuck within the chamber, the mono-polar electrostatic chuck comprising:

a chuck body;

a plurality of lift-pin holes in the chuck body; and

a plurality of lift-pins, individual ones of the plurality of lift-pins in corresponding ones of the plurality of lift-pin holes, wherein each of the plurality of lift-pins comprises:

a first metal spring;

a first metal above and coupled to the first metal spring;

a second metal spring above and coupled to the first metal;

a second metal above and coupled to the second metal spring; and

a ceramic above and coupled to the second metal.

15 . The system of claim 14 , wherein the first metal spring of each of the plurality of lift-pins of the mono-polar electrostatic chuck provides a consistent ground path for the lift-pin assembly.

16 . The system of claim 14 , wherein the first metal spring of each of the plurality of lift-pins of the mono-polar electrostatic chuck provides compliance for the lift-pin assembly.

17 . The system of claim 14 , wherein the first metal spring of each of the plurality of lift-pins of the mono-polar electrostatic chuck provides guided linear motion for the lift-pin assembly.

18 . The system of claim 14 , wherein the second metal spring of each of the plurality of lift-pins of the mono-polar electrostatic chuck provides back pressure for the lift-pin assembly, and wherein the second metal spring of each of the plurality of lift-pins of the mono-polar electrostatic chuck provides contact pressure for the lift-pin assembly.

19 . The system of claim 14 , wherein the ceramic of each of the plurality of lift-pins of the mono-polar electrostatic chuck is for supporting a wafer, and wherein the ceramic comprises SiC.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2024
From: KOSHTI, SUSHIM; PARKHE, VIJAY; SATYAVOLU, NITIN BHARADWAJ; VELLANKI, VENUGOPAL; BALESAN, NIRANJANA; SAWANT, ASHUTOSH
To: APPLIED MATERIALS, INC.
Reel/Frame 067194/0160 →
Continuity (2)
Provisional Application 63470088 · May 31, 2023
Related Publication 20240404861A1 · Dec 5, 2024
References Cited (157)
US 3837944A · Cole, Jr. · 1974 [cited by applicant]
US 4283482A · Hattori et al. · 1981 [cited by applicant]
US 4292384A · Straughan et al. · 1981 [cited by applicant]
US 4320191A · Yoshikawa et al. · 1982 [cited by applicant]
US 4332879A · Pastor et al. · 1982 [cited by applicant]
US 4464455A · Yoneda et al. · 1984 [cited by applicant]
US 4560641A · Kokaku et al. · 1985 [cited by applicant]
US 4842989A · Taniguchi et al. · 1989 [cited by applicant]
US 5310624A · Ehrlich · 1994 [cited by applicant]
US 5366852A · Pavelchek et al. · 1994 [cited by applicant]
US 5439780A · Joshi et al. · 1995 [cited by applicant]
US 5457005A · Babich et al. · 1995 [cited by applicant]
US 5763016A · Levenson et al. · 1998 [cited by applicant]
US 5885751A · Weidman et al. · 1999 [cited by applicant]
US 6204168B1 · Naik et al. · 2001 [cited by applicant]
US 6589715B2 · Joubert et al. · 2003 [cited by applicant]
US 6825562B2 · Naik et al. · 2004 [cited by applicant]
US 6855485B2 · Irie · 2005 [cited by applicant]
US 6989227B2 · Weidman et al. · 2006 [cited by applicant]
US 7064076B2 · Kulkarni · 2006 [cited by applicant]
US 7713678B2 · Hosoda · 2010 [cited by applicant]
US 7771895B2 · Wu et al. · 2010 [cited by applicant]
US 8465903B2 · Weidman et al. · 2013 [cited by applicant]
US 8536068B2 · Weidman et al. · 2013 [cited by applicant]
US 8709706B2 · Wu et al. · 2014 [cited by applicant]
US 8940386B2 · Ohtani et al. · 2015 [cited by applicant]
US 9229326B2 · Lu et al. · 2016 [cited by applicant]
US 9310684B2 · Meyers et al. · 2016 [cited by applicant]
US 9354508B2 · Beasley et al. · 2016 [cited by applicant]
US 9411237B2 · Xie et al. · 2016 [cited by applicant]
US 9417515B2 · Barman et al. · 2016 [cited by applicant]
US 9470980B2 · Inoue et al. · 2016 [cited by applicant]
US 9632411B2 · Michaelson et al. · 2017 [cited by applicant]
US 9778561B2 · Marks et al. · 2017 [cited by applicant]
US 9829805B2 · Michaelson et al. · 2017 [cited by applicant]
US 9996004B2 · Smith et al. · 2018 [cited by applicant]
US 10228618B2 · Meyers et al. · 2019 [cited by applicant]
US 10642153B2 · Meyers et al. · 2020 [cited by applicant]
US 10658180B1 · Mignot et al. · 2020 [cited by applicant]
US 10787466B2 · Edson et al. · 2020 [cited by applicant]
US 10831096B2 · Marks et al. · 2020 [cited by applicant]
US 11598005B2 · Murakami · 2023 [cited by examiner]
US 11599022B2 · Stowers et al. · 2023 [cited by applicant]
US 11621172B2 · Kalutarage et al. · 2023 [cited by applicant]
US 20010008227A1 · Sadamoto et al. · 2001 [cited by applicant]
US 20020144657A1 · Chiang · 2002 [cited by examiner]
US 20040091618A1 · Park et al. · 2004 [cited by applicant]
US 20040214113A1 · Goldstein et al. · 2004 [cited by applicant]
US 20060156981A1 · Fondurulia et al. · 2006 [cited by applicant]
US 20110294072A1 · Park et al. · 2011 [cited by applicant]
US 20140356770A1 · Hayashi · 2014 [cited by applicant]
US 20150056542A1 · Meyers et al. · 2015 [cited by applicant]
US 20150200091A1 · Chada et al. · 2015 [cited by applicant]
US 20160011502A1 · Hofmann et al. · 2016 [cited by applicant]
US 20160116839A1 · Meyers et al. · 2016 [cited by applicant]
US 20160329222A1 · Xie et al. · 2016 [cited by applicant]
US 20170186614A1 · Ko et al. · 2017 [cited by applicant]
US 20170261850A1 · Stowers et al. · 2017 [cited by applicant]
US 20170271152A1 · Char et al. · 2017 [cited by applicant]
US 20180173096A1 · Zi et al. · 2018 [cited by applicant]
US 20180307137A1 · Meyers et al. · 2018 [cited by applicant]
US 20190131130A1 · Smith et al. · 2019 [cited by applicant]
US 20190153001A1 · Cardineau et al. · 2019 [cited by applicant]
US 20190308998A1 · Cardineau et al. · 2019 [cited by applicant]
US 20190315781A1 · Edson et al. · 2019 [cited by applicant]
US 20190337969A1 · Odedra et al. · 2019 [cited by applicant]
US 20190384171A1 · Zi et al. · 2019 [cited by applicant]
US 20200064733A1 · Meyers et al. · 2020 [cited by applicant]
US 20200073238A1 · Zi et al. · 2020 [cited by applicant]
US 20200176246A1 · Huotari et al. · 2020 [cited by applicant]
US 20200223877A1 · Odedra et al. · 2020 [cited by applicant]
US 20200239498A1 · Clark · 2020 [cited by applicant]
US 20200241413A1 · Clark et al. · 2020 [cited by applicant]
US 20210005504A1 · Han · 2021 [cited by examiner]
US 20220004105A1 · Dai et al. · 2022 [cited by applicant]
US 20220020584A1 · Volosskiy et al. · 2022 [cited by applicant]
US 20220244645A1 · Tan et al. · 2022 [cited by applicant]
US 20220306657A1 · Fabulyak et al. · 2022 [cited by applicant]
US 20220308447A1 · Stowers et al. · 2022 [cited by applicant]
US 20230019943A1 · Nakabayashi et al. · 2023 [cited by applicant]
US 20230078946A1 · Grzeskowiak et al. · 2023 [cited by applicant]
US 20230100995A1 · Cardineau et al. · 2023 [cited by applicant]
US 20230143629A1 · Clark · 2023 [cited by applicant]
US 20230152705A1 · Grzeskowiak et al. · 2023 [cited by applicant]
US 20230197505A1 · Lutker-Lee et al. · 2023 [cited by applicant]
US 20230215736A1 · Kalutarage et al. · 2023 [cited by applicant]
US 20230290646A1 · Kalutarage et al. · 2023 [cited by applicant]
CN 108351594A · 2018 [cited by applicant]
EP 0090615A2 · 1983 [cited by applicant]
EP 0100079A2 · 1984 [cited by applicant]
EP 1033744A2 · 2000 [cited by applicant]
EP 2926199B1 · 2020 [cited by applicant]
JP H05100425A · 1993 [cited by applicant]
JP 08320574A · 1996 [cited by applicant]
JP 2000100915A · 2000 [cited by applicant]
JP 2006303138A · 2006 [cited by applicant]
JP 2014209622A1 · 2014 [cited by applicant]
JP 2017116923A · 2017 [cited by applicant]
JP 2019500490A · 2019 [cited by applicant]
JP 2020510994A · 2020 [cited by applicant]
TW 201443271A · 2014 [cited by applicant]
TW 201601444A · 2016 [cited by applicant]
TW 201635334A · 2016 [cited by applicant]
TW 201841258A · 2018 [cited by applicant]
TW 201907517A · 2019 [cited by applicant]
TW 202006168A · 2020 [cited by applicant]
TW 202016279A · 2020 [cited by applicant]
TW 202117468A · 2021 [cited by applicant]
TW 202306023A · 2023 [cited by applicant]
WO 9900837A1 · 1999 [cited by applicant]
WO 2004095551A1 · 2004 [cited by applicant]
WO 2018004646 · 2018 [cited by applicant]
WO 2019217749A1 · 2019 [cited by applicant]
WO 2020081483A1 · 2020 [cited by applicant]
WO 2020132281A1 · 2020 [cited by applicant]
WO 2020264158A1 · 2020 [cited by applicant]
WO 2020264557A1 · 2020 [cited by applicant]
WO 2020264571A1 · 2020 [cited by applicant]
WO 2021072042A1 · 2021 [cited by applicant]
WO 2021146138A1 · 2021 [cited by applicant]
WO 2021158433A1 · 2021 [cited by applicant]
WO 2021202146A1 · 2021 [cited by applicant]
WO 2022004211A1 · 2022 [cited by applicant]
WO 2022103764A1 · 2022 [cited by applicant]
WO 2022265874A1 · 2022 [cited by applicant]
WO 2023009364A1 · 2023 [cited by applicant]
International Search Report and Written Opinion from PCT/US2024/026513 dated Aug. 20, 2024, 7 pgs. [cited by applicant]
International Search Report and Written Opinion from PCT/US2023/032497 dated Jan. 3, 2024, 9 pgs. [cited by applicant]
Official Letter from Taiwan Patent Application No. 112128099 dated Dec. 22, 2023, 6 pgs. [cited by applicant]
Chang, et al., “Gas-phase silicon micromachinging with xenon difluoride,” SPIE vol. 2641, 1995, pp. 117-128. [cited by applicant]
Mori, et al., “Prediction of Resolution using wet-develop type single layer and dry-development process for EUV lithography,” Elsevier Science 2000, pp. 689-692. [cited by applicant]
Seniutinas, “Development of high-resolution 3D nanotechnology tools: sensors focus,” Swinburn University of Technology 2016, pp. 1-261. [cited by applicant]
Ito, et al., “Chemical Amplification in the Design of Dry Developing Resist Materials,” Polymer Engineering and Science, Dec. 1983, vol. 23, No. 18, pp. 1012-1018. [cited by applicant]
Manouras, et al., “High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results,” MDPI, Nanomaterials, Aug. 14, 2020, pp. 1-24. [cited by applicant]
Stowers, “Direct Patterning of Solution Deposited Metal Oxides,” An Abstract of Dissertation, Aug. 14, 2008, pp. 1-149. [cited by applicant]
Wagner, et al., “The Use of HBr in Polysilicon Etching,” Gases & Instrumentation International, vol. 7, Issue 4, Jul./Aug. 2013, pp. 1-7. [cited by applicant]
“List of Reactive Gases,” Aug. 23, 2019, https://sps-support.honeywell.com/s/article/List-of-reactive-gases. [cited by applicant]
Niibe, et al., “Competitive reactions of carbon deposition and oxidation on the surface of Mo/Si multilayer mirrors by EUV irradiation,” SPIE Optics + Optoelectronics, 2009, pp. 1-8. [cited by applicant]
Krysak, et al., “Development of an Inorganic Nanoparticle Photoresist for EUV, E-beam and 193 nm Lithography,” SPIE vol. 7972, 2011, pp. 79721C-1 through 79721C-6. [cited by applicant]
Cardineau, et al., “EUV resists based on tin-oxo clusters,” SPIE vol. 9051, 2014, pp. 90511B-1 through 90511B-12. [cited by applicant]
Buitrago, et al., “SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography,” Elsevier, 2016, pp. 44-49. [cited by applicant]
Preliminary Report on Patentability for Patent Application No. PCT/US2021/038758 dated Jan. 12, 2023, 6 pgs. [cited by applicant]
International Search Report and Written Opinion from International Patent Application No. PCT/US2021/038758 dated Oct. 15, 2021, 10 pgs. [cited by applicant]
Notice of Reasons for Rejection from Japanese Patent Application No. 2022-580825 dated Jan. 23, 2024, 8 pgs. [cited by applicant]
Non-Final Office Action from U.S. Appl. No. 18/198,743 dated Dec. 5, 2023, 28 pgs. [cited by applicant]
Official Letter from Taiwan Patent Application No. 112128099 dated Sep. 22, 2023, 7 pgs. [cited by applicant]
Official Letter from Taiwan Patent Application No. 110124241 dated Mar. 28, 2023, 10 pgs. [cited by applicant]
International Search Report and Written Opinion from International Patent Application No. PCT/US2021/038424 dated Oct. 14, 2021, 9 pgs. [cited by applicant]
Non-Final Office Action from U.S. Appl. No. 17/348,589 dated Jul. 28, 2022, 11 pgs. [cited by applicant]
International Preliminary Report on Patentability from PCT/US2021/038424 dated Jan. 12, 2023, 6 pgs. [cited by applicant]
Non-Final Office Action from U.S. Appl. No. 18/116,556 dated Aug. 1, 2023, 9 pgs. [cited by applicant]
Non-Final Office Action from U.S. Appl. No. 18/116,556 dated Dec. 5, 2023, 25 pgs. [cited by applicant]
Notice of Reasons for Rejection from Japanese Patent Application No. 2022-580826 dated Feb. 26, 2024, 8 pgs. [cited by applicant]
International Preliminary Report on Patentability from PCT/US2024/026513 dated Dec. 11, 2025, 6 pgs. [cited by applicant]
Weidman, et al., “Applications of Plasma Polymerized Methylsilane as a Resist and Silicon Dioxide Precursor for 193 and 248 nm Lithography,” SPIE vol. 2438, Jun. 9, 1995, 9 pgs. [cited by applicant]
Official Letter from Taiwan Patent Application No. 113116953 mailed Mar. 19, 2026, 10 pgs. [cited by applicant]
Weidman, et al., “Applications of Plasma Polymerized Methylsilane as a Resist and Silicon Dioxide Precursor for 193 and 248 nm Lithography,” Advances in Resist Technology and Processing XII, SPIE's 1995 Symposium on Mic… [cited by applicant]