Dual ampoule separator plate and method
A system and method for reducing thermal transfer in a dual ampoule system. The dual ampoule system includes a first ampoule, a second ampoule, and a planar heat shield. The planar heat shield is positioned between the first ampoule and the second ampoule, where the planar heat shield is configured to resist thermal transfer between the first ampoule and the second ampoule.
1 . A dual ampoule system, comprising:
a first ampoule;
a second ampoule;
a first hot can above the first ampoule;
a second hot can above the second ampoule;
a planar heat shield, positioned between the first ampoule and the second ampoule, comprising a first region and a second region,
wherein the planar heat shield is configured to resist thermal transfer between the first ampoule and the second ampoule,
wherein the first region is between the first ampoule and the second ampoule, and
wherein the second region is between the first hot can and the second hot can and has a width that is less than a width of the first region;
one or more gas lines extending between the first hot can and the second hot can, wherein the second region is positioned around the one or more gas lines;
an adjustable bracket, coupled to an end of the planar heat shield, configured to allow the planar heat shield to be selectively positioned closer to the first ampoule or the second ampoule,
wherein the end of the planar heat shield extends outward from between the first ampoule and the second ampoule to provide access to the adjustable bracket;
a fan, adjacent to at least one of the first ampoule or the second ampoule, configured to generate an airflow around one or more of the first ampoule or the second ampoule; and
an exhaust line, located below and between the first ampoule and the second ampoule, configured to receive the airflow.
2 . The dual ampoule system of claim 1 , wherein the planar heat shield comprises: a material with a thermal conductivity in a range of approximately 0 Watts per meter-Kelvin (W/mK) to approximately 100 W/mK.
3 . The dual ampoule system of claim 1 , wherein the planar heat shield comprises a material including at least one of: stainless steel, ceramic, glass, or titanium.
4 . The dual ampoule system of claim 1 , wherein the planar heat shield includes:
a height in a range of approximately 220 millimeters (mm) to approximately 280 mm;
a width in a range of approximately 220 mm to approximately 250 mm; and
a thickness in a range of approximately 0.5 mm to approximately 2 mm.
5 . The dual ampoule system of claim 1 , wherein the end of the planar heat shield is positioned closer to the first ampoule than the second ampoule.
6 . The dual ampoule system of claim 1 , further comprising:
a first heating element configured to generate heat to cause a temperature of the first ampoule to reach a first ampoule target temperature; and
a second heating element configured to generate heat to cause a temperature of the second ampoule to reach a second ampoule target temperature.
7 . The dual ampoule system of claim 1 , further comprising:
a controller configured to:
cause the first ampoule to be maintained at a first temperature, and
cause the second ampoule to be maintained at a second temperature.
8 . The dual ampoule system of claim 7 , wherein, to cause the first ampoule to be maintained at the first temperature and cause the second ampoule to be maintained at the second temperature, the controller is configured to:
provide a first signal indicative of a first ampoule temperature setpoint associated with the first ampoule, and provide a second signal indicative of a second ampoule temperature setpoint associated with the second ampoule.
9 . The dual ampoule system of claim 7 , further comprising:
a first sensor associated with the first ampoule; and
a second sensor associated with the second ampoule, and
wherein the controller is configured to:
receive, from the first sensor, first ampoule sensor data associated with a first ampoule ambient temperature, and
receive, from the second sensor, second ampoule sensor data associated with a second ampoule ambient temperature.
10 . The dual ampoule system of claim 1 , wherein the second region comprises a cut-out region positioned around the one or more gas lines.
11 . The dual ampoule system of claim 1 , further comprising a fan speed sensor positioned in-line in the exhaust line, wherein the fan speed sensor is configured to generate sensor data for adjusting the airflow through the exhaust line.
12 . A deposition system, comprising:
a processing chamber; and
a dual ampoule system, including:
a first ampoule and a second ampoule, wherein the first ampoule and the second ampoule are configured to:
respectively generate a first precursor gas at a first temperature, and a second precursor gas at a second temperature, and
respectively provide the first precursor gas and the second precursor gas to the processing chamber for use in a same barrier layer deposition operation,
wherein the first temperature is greater than the second temperature,
a first hot can, above the first ampoule, and a second hot can, above the second ampoule,
a fan, adjacent to at least one of the first ampoule or the second ampoule, configured to generate an airflow around one or more of the first ampoule or the second ampoule,
an exhaust line, located below and between the first ampoule and the second ampoule, configured to receive the airflow, and
a planar heat shield, between the first ampoule and the second ampoule, configured to:
at least partially thermally isolate the second ampoule and the first ampoule, and
resist absorption of convection heat from the first ampoule,
wherein the planar heat shield comprises a first region, between the first ampoule and the second ampoule, and a second region, between the first hot can and the second hot can, wherein the second region has a width that is less than a width of the first region, and
one or more gas lines extending between the first hot can and the second hot can, wherein the second region is positioned around the one or more gas lines.
13 . The deposition system of claim 12 , wherein the first precursor gas includes a ruthenium (Ru) precursor gas,
wherein the second precursor gas includes a tantalum nitride (TaN) precursor gas, and
wherein the deposition system further comprises:
a mixer configured to combine the ruthenium precursor gas and the tantalum nitride precursor gas to form a mixed precursor gas for use in the same barrier layer deposition operation for forming a barrier layer that includes ruthenium and tantalum nitride (Ru (TaN)).
14 . The deposition system of claim 12 , further comprising:
an adjustable bracket coupled to an end of the planar heat shield,
wherein the adjustable bracket is configured to permit the end of the planar heat shield to be positioned toward the first ampoule or the second ampoule.
15 . The deposition system of claim 12 , further comprising:
a cooling element positioned at the second ampoule.
16 . The deposition system of claim 12 , further comprising a fan speed sensor positioned in-line in the exhaust line, wherein the fan speed sensor is configured to generate sensor data for adjusting the airflow through the exhaust line.
17 . A deposition system, comprising:
a processing chamber;
a dual ampoule system, including:
a first ampoule configured to provide a first precursor gas, at a first temperature, to the processing chamber,
a second ampoule configured provide a second precursor gas, at a second temperature greater than the first temperature, to the processing chamber,
a first hot can, above the first ampoule, and a second hot can, above the second ampoule,
a planar heat shield, positioned between the first ampoule and the second ampoule, comprising a first region and a second region,
wherein the first region is between the first ampoule and the second ampoule, and
wherein the second region is between the first hot can and the second hot can and has a width that is less than a width of the first region;
one or more gas lines extending between the first hot can and the second hot can, wherein the second region is positioned around the one or more gas lines,
a fan, adjacent to at least one of the first ampoule or the second ampoule, configured to generate an airflow around one or more of the first ampoule or the second ampoule, and
an exhaust line, located below and between the first ampoule and the second ampoule, configured to receive the airflow; and
a controller configured to:
cause the first ampoule to be maintained at the first temperature, and
cause the second ampoule to be maintained at the second temperature.
18 . The deposition system of claim 17 , wherein each of the first ampoule and the second ampoule is configured to store a solid or liquid precursor.
19 . The deposition system of claim 17 , wherein the dual ampoule system further includes:
a first heating element configured to generate heat to cause a temperature of the first ampoule to reach a first ampoule target temperature, and
a second heating element configured to generate heat to cause a temperature of the second ampoule to reach a second ampoule target temperature.
20 . The deposition system of claim 17 , further comprising:
a cooling element configured to cool the second ampoule.