Semiconductor memory device with feature registers for storing parameter data
According to one embodiment, a semiconductor memory device includes a terminal group, a first device, and a second device. The first device includes a first register group to which a first address space is mapped and a memory cell array. The second device is provided between the terminal group and the first device. The second device includes a second register group. The second register group includes multiple pages to which common second address spaces exclusive of the first address space are mapped. When the second device receives a command sequence of a setting command, the second device identifies, based on the command sequence of the setting command, a storage destination page of parameter data from among the multiple pages when an address included in the command sequence of the setting command is a first value.
1 . A semiconductor memory device comprising:
a terminal group to which a command sequence of a setting command is input, the command sequence including an address;
a first device including a first register group to which a first address space is mapped and a memory cell array, the first device being configured to
store parameter data in the first register group when the address is included in the first address space, and
not store the parameter data in the first register group when the address is not included in the first address space; and
a second device provided between the terminal group and the first device, the second device including a second register group, the second register group including multiple pages to which common second address spaces exclusive of the first address space are mapped, the second device being configured to identify, based on the command sequence, a storage destination page of the parameter data from among the multiple pages when the address is a first value.
2 . The semiconductor memory device according to claim 1 , wherein
the command sequence of the setting command includes data in addition to the address,
the first value is included in the common second address spaces, and
the second device is configured to
identify one of the multiple pages based on data included in a first command sequence when the first command sequence is received via the terminal group, the setting command comprising the first command sequence and the first value, and,
store, as the parameter data, data included in a second command sequence when the second command sequence is received via the terminal group after the first command sequence, the data included in the second command sequence being stored at a position that is indicated by a second value and is in the identified one of the multiple pages, the second value being different from the first value and being included in the second address space, the setting command comprising the second command sequence and the second value.
3 . The semiconductor memory device according to claim 1 , wherein
the first device is given a logical unit number (LUN),
the command sequence of the setting command includes the parameter data in addition to the address,
the address includes a first address included in either the first address space or the second address space, and includes a second address to which the LUN can be designated,
the first value is one of values that are correlated with each of different pages of the multiple pages, and
the second device is configured to
interpret the second address as the first value when the first address is included in the second address space, and
store the parameter data at a position indicated by the first address, the position being located in a page corresponding to the first value out of the multiple pages.
4 . The semiconductor memory device according to claim 1 , wherein
the first device is given a logical unit number (LUN),
the first value is one of values exclusive of the LUN that are correlated with each of different pages of the multiple pages,
the command sequence of the setting command includes the parameter data in addition to the address,
the address includes a first address included in either the first address space or the second address space, and includes a second address to which the LUN or the first value can be designated, and
the second device is configured to store the parameter data at a position indicated by the first address when the second address is the first value, the position being located in a page corresponding to the first value out of the multiple pages.
5 . The semiconductor memory device according to claim 1 , wherein the setting command is a SetFeature command.
6 . A memory system comprising:
the semiconductor memory device according to claim 1 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
7 . A memory system comprising:
the semiconductor memory device according to claim 2 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
8 . A memory system comprising:
the semiconductor memory device according to claim 3 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
9 . A memory system comprising:
the semiconductor memory device according to claim 4 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
10 . A memory system comprising:
the semiconductor memory device according to claim 5 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
11 . A semiconductor memory device comprising:
a terminal group to which a command sequence of a setting command is input, the command sequence including an address included in a first address space;
a first device including a first register group and a memory cell array; and
a second device provided between the terminal group and the first device, the second device including a second register group and a memory in which first information has been stored, wherein
the first address space includes a first space and a second space exclusive of the first space, the first space being used for access to the first register group, the second space being used for access to the second register group,
the first information is information in which a correspondence between the second space and the second register group is recorded,
the first device is configured to
store parameter data in the first register group when the address is included in the first space, and
not store the parameter data in the first register group when the address is not included in the first space, and
the second device is configured to
store the parameter data in the second register group when the address is included in the second space, and
not store the parameter data in the second register group when the address is not included in the second space.
12 . The semiconductor memory device according to claim 11 , wherein
the second register group includes plural storage areas,
the second space includes plural first addresses,
the first information includes a correspondence between the plural first addresses and the plural storage areas, and
the second device is configured to, when the address is one of the plural first addresses, store the parameter data in a storage area correlated with the address by the first information out of the plural storage areas.
13 . The semiconductor memory device according to claim 12 , wherein
the first address space includes third spaces with which second addresses are correlated,
each of the third spaces includes segments, and
the first space and the second space are constituted by mutually exclusive segment groups.
14 . The semiconductor memory device according to claim 11 , wherein the setting command is a SetFeature command.
15 . A memory system comprising:
the semiconductor memory device according to claim 11 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
16 . A memory system comprising:
the semiconductor memory device according to claim 12 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
17 . A memory system comprising:
the semiconductor memory device according to claim 13 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
18 . A memory system comprising:
the semiconductor memory device according to claim 14 ; and
a memory controller configured to transmit the command sequence of the setting command to the semiconductor memory device.
19 . A method of controlling a semiconductor memory device, the semiconductor memory device including a terminal group, a first device, and a second device provided between the terminal group and the first device, the terminal group being a terminal group to which a command sequence of a setting command is input, the command sequence including an address, the first device including a first register group to which a first address space is mapped and a memory cell array, the second device including a second register group including multiple pages to which common second address spaces exclusive of the first address space are mapped, the method comprising:
identifying a storage destination page of parameter data from among the multiple pages when the address included in the command sequence received by the second device is a first value, the identifying being performed based on the command sequence.
20 . The method according to claim 19 , wherein
the command sequence of the setting command includes data in addition to the address,
the first value is included in the second address space, and
the method further comprises processing performed by the second device, the processing including:
identifying one of the multiple pages based on data included in a first command sequence in response to receiving the first command sequence via the terminal group, the setting command comprising the first command sequence and the first value; and
storing, as the parameter data, data included in a second command sequence in response to receiving the second command sequence via the terminal group after the first command sequence, the data included in the second command sequence being stored at a position that is indicated by a second value and is in the identified one of the multiple pages, the second value being different from the first value and being included in the second address space, the setting command comprising the second command sequence and the second value.