IP Library › Granted Patent US 12,727,353
Granted Patent B2
US 12,727,353 · App. 18/159,635 · Granted Sep 1, 2026

Display device gate wiring and fanout wiring configurations

Inventors: Junyoung Min (Yongin-si, KR); Wonkyu Kwak (Yongin-si, KR); Huigyeong Yun (Yongin-si, KR); Junwon Choi (Yongin-si, KR); Jihyun Ka (Yongin-si, KR); Yangwan Kim (Yongin-si, KR); Myeonghee Seo (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/1315H10K59/124
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,727,353
App. No.
18/159,635
Granted
Sep 1, 2026
Kind
B2
Abstract

A display device includes: a substrate including a display area and a non-display area including a pad area; an inorganic insulating layer disposed on the substrate and including a first inorganic insulating layer, a second inorganic insulating layer, and a third inorganic insulating layer; a light-emitting element layer disposed on the inorganic insulating layer and including a light-emitting element overlapping the display area in a plan view; a gate wiring overlapping the display area in the plan view, extending in a first direction and disposed between the first inorganic insulating layer and the second inorganic insulating layer; and a fanout wiring extending in a direction toward the display area from the pad area and disposed between the second inorganic insulating layer and the third inorganic insulating layer, where a sheet resistance of the gate wiring is lower than a sheet resistance of the fanout wiring.

Claims (33)

1 . A display device comprising:

a substrate comprising a display area and a non-display area outside the display area, wherein the non-display area comprises

a pad area;

an inorganic insulating layer disposed on the substrate;

a gate wiring overlapping the display area in a plan view, extending in a first direction and disposed inside the inorganic insulating layer;

a fanout wiring extending in a direction toward the display area from the pad area in the plan view, disposed inside the inorganic insulating layer and comprising a different material from a material of the gate wiring;

a light-emitting element layer disposed on the inorganic insulating layer and comprising a light-emitting element overlapping the display area in the plan view;

a sealing substrate disposed on the light-emitting element layer; and

a sealing member disposed between the substrate and the sealing substrate and surrounding the display area in the plan view,

wherein a sheet resistance of the gate wiring is lower than a sheet resistance of the fanout wiring,

wherein the fanout wiring extends while crossing the sealing member in the plan view, and

a melting point of a material included in the fanout wiring is higher than a melting point of a material included in the gate wiring,

wherein the sealing member comprises a laser-curable material, and

wherein the inorganic insulating layer comprises a buffer layer, a first inorganic insulating layer, and a second inorganic insulating layer, which are sequentially stacked one on another, and

the display device further comprises:

a lower metal layer overlapping the display area in the plan view and disposed between the substrate and the buffer layer; and

a semiconductor layer overlapping the lower metal layer in the plan view, disposed between the buffer layer and the first inorganic insulating layer and comprising an oxide semiconductor, and

the fanout wiring is arranged in a same layer as the lower metal layer.

2 . The display device of claim 1 , wherein the sheet resistance of the gate wiring is less than or equal to about a half of the sheet resistance of the fanout wiring.

3 . The display device of claim 1 , wherein

the gate wiring comprises at least one selected from titanium nitride and titanium and aluminum, and

the fanout wiring comprises molybdenum.

4 . The display device of claim 1 , wherein

the gate wiring is disposed between the first inorganic insulating layer and the second inorganic insulating layer, and

the fanout wiring is disposed between the substrate and the buffer layer.

5 . The display device of claim 1 , wherein

the substrate comprises a first edge extending in the first direction and a second edge extending in a second direction crossing the first direction, and

a length of the first edge is greater than a length of the second edge.

6 . The display device of claim 1 , wherein

the fanout wiring comprises adjacent fanout wirings, and

the adjacent fanout wirings are disposed in a same layer as each other.

7 . The display device of claim 1 , further comprising:

an encapsulation layer disposed on the light-emitting element layer and comprising an inorganic encapsulation layer and an organic encapsulation layer.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE CORRECT INVENTOR'S NAME PREVIOUSLY RECORDED AT REEL: 062489 FRAME: 0478. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Aug 25, 2023
From: MIN, JUNYOUNG; KWAK, WONKYU; YUN, HUIGYEONG; CHOI, JUNWON; KA, JIHYUN; SEO, MYEONGHEE
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 064789/0383 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2023
From: MIN, JUNYOUNG; KWAK, WONKYU; YU, HUIGYEONG; CHOI, JUNWON; KA, JIHYUN; SEO, MYEONGHEE
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 062489/0478 →
Priority Claims (1)
KR 10-2022-0011786 · Jan 26, 2022 · national
Continuity (1)
Related Publication 20230240107A1 · Jul 27, 2023
References Cited (42)
US 8198191B2 · Cho et al. · 2012 [cited by applicant]
US 8907327B2 · Kim et al. · 2014 [cited by applicant]
US 8975761B2 · Jung · 2015 [cited by applicant]
US 9136047B2 · Song et al. · 2015 [cited by applicant]
US 9425434B2 · Lee et al. · 2016 [cited by applicant]
US 9660011B2 · Kim et al. · 2017 [cited by applicant]
US 9679957B2 · Kwon et al. · 2017 [cited by applicant]
US 9761650B2 · Kwon et al. · 2017 [cited by applicant]
US 11158693B2 · Chung et al. · 2021 [cited by applicant]
US 11355568B2 · Ka et al. · 2022 [cited by applicant]
US 11889706B2 · Kim et al. · 2024 [cited by applicant]
US 20140117320A1 · Jung · 2014 [cited by examiner]
US 20140183476A1 · Kwon · 2014 [cited by examiner]
US 20150380474A1 · Lee · 2015 [cited by examiner]
US 20160377904A1 · Shin · 2016 [cited by examiner]
US 20170262109A1 · Choi et al. · 2017 [cited by applicant]
US 20170301739A1 · Park · 2017 [cited by examiner]
US 20190095007A1 · Jeong et al. · 2019 [cited by applicant]
US 20190165079A1 · Cho · 2019 [cited by examiner]
US 20200058725A1 · Ka · 2020 [cited by examiner]
US 20200111854A1 · Chung · 2020 [cited by examiner]
US 20210111238A1 · Kim et al. · 2021 [cited by applicant]
US 20210320165A1 · So et al. · 2021 [cited by applicant]
US 20210399077A1 · Eom et al. · 2021 [cited by applicant]
KR 100807948B1 · 2008 [cited by applicant]
KR 100841170B1 · 2008 [cited by applicant]
KR 1020140053626A · 2014 [cited by applicant]
KR 1020140085305A · 2014 [cited by applicant]
KR 1020160000980A · 2016 [cited by applicant]
KR 1020160043574A · 2016 [cited by applicant]
KR 1020160122892A · 2016 [cited by applicant]
KR 1020170001815A · 2017 [cited by applicant]
KR 1020170106621A · 2017 [cited by applicant]
KR 1020190035995A · 2019 [cited by applicant]
KR 102034050B1 · 2019 [cited by applicant]
KR 1020200021569A · 2020 [cited by applicant]
KR 1020200037027A · 2020 [cited by applicant]
KR 1020200039067A · 2020 [cited by applicant]
KR 1020210044362A · 2021 [cited by applicant]
KR 1020210075943A · 2021 [cited by applicant]
KR 1020210127276A · 2021 [cited by applicant]
KR 1020210157926A · 2021 [cited by applicant]