IP Library › Granted Patent US 12,727,472
Granted Patent B2
US 12,727,472 · App. 18/468,758 · Granted Sep 1, 2026

Tapered antifuse

Inventors: Ashim Dutta (Clifton Park, NY); Chih-Chao Yang (Glenmont, NY); Shravana Kumar Katakam (Lehi, UT)
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
H10W20/491
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Quick Facts
Patent No.
US 12,727,472
App. No.
18/468,758
Granted
Sep 1, 2026
Kind
B2
Abstract

A antifuse structure including a first metal sidewall spacer and a second metal sidewall spacer arranged on opposite sides of a tapered dielectric pedestal, and a fuse dielectric on top of the tapered dielectric pedestal and between the first metal sidewall spacer and the second metal sidewall spacer.

Claims (31)

1 . An antifuse structure comprising:

a first metal sidewall spacer and a second metal sidewall spacer arranged on opposite sides of a tapered dielectric pedestal; and

a fuse dielectric on top of the tapered dielectric pedestal and between the first metal sidewall spacer and the second metal sidewall spacer, wherein tapered sidewalls of the tapered dielectric pedestal are flush with tapered sidewalls of the fuse dielectric.

2 . The antifuse structure according to claim 1 , wherein a distance between the first metal sidewall spacer and the second metal sidewall spacer measured at the top of the tapered dielectric pedestal is smaller than a distance between the first metal sidewall spacer and the second metal sidewall spacer measured at a bottom of the tapered dielectric pedestal.

3 . The antifuse structure according to claim 1 , wherein a vertical thickness of the fuse dielectric is less than a vertical thickness of the tapered dielectric pedestal.

4 . The antifuse structure according to claim 1 , wherein the tapered dielectric pedestal is made from an interlevel dielectric.

5 . The antifuse structure according to claim 1 , wherein a height of the tapered dielectric pedestal is at least two times a height of the fuse dielectric.

6 . The antifuse structure according to claim 1 , further comprising:

a conductive link in direct contact with and extending between the first metal sidewall spacer and the second metal sidewall spacer through the fuse dielectric.

7 . An antifuse structure comprising:

a first metal sidewall spacer and a second metal sidewall spacer arranged on opposite sides of a tapered pedestal;

a fuse dielectric on top of the tapered pedestal and between the first metal sidewall spacer and the second metal sidewall spacer, wherein tapered sidewalls of the tapered pedestal are flush with tapered sidewalls of the fuse dielectric;

a first conductive line below and in direct contact with the first metal sidewall spacer; and

a second conductive line below and in direct contact with the second metal sidewall spacer.

8 . The antifuse structure according to claim 7 , wherein a distance between the first metal sidewall spacer and the second metal sidewall spacer measured at a top of the tapered pedestal is smaller than a distance between the first metal sidewall spacer and the second metal sidewall spacer measured at a bottom of the tapered pedestal.

9 . The antifuse structure according to claim 7 , wherein vertical thickness of the fuse dielectric is less than a vertical thickness of the tapered pedestal.

10 . The antifuse structure according to claim 7 , wherein the tapered pedestal is made from an interlevel dielectric.

11 . The antifuse structure according to claim 7 , wherein a height of the tapered pedestal is at least two times a height of the fuse dielectric.

12 . The antifuse structure according to claim 7 , further comprising:

a conductive link in direct contact with and extending between the first metal sidewall spacer and the second metal sidewall spacer through the fuse dielectric.

13 . An antifuse structure comprising:

a first pair of metal sidewall spacers arranged on opposite sides of a first tapered pedestal;

a first fuse dielectric on top of the first tapered pedestal and between the first pair of metal sidewall spacers, wherein tapered sidewalls of the first tapered pedestal are flush with tapered sidewalls of the first fuse dielectric;

a second pair of metal sidewall spacers arranged on opposite sides of a second tapered pedestal; and

a second fuse dielectric on top of the second tapered pedestal and between the second pair of metal sidewall spacers, wherein tapered sidewalls of the second tapered pedestal are flush with tapered sidewalls of the second fuse dielectric, and wherein a breakdown voltage of the first fuse dielectric is different than a breakdown voltage of the second fuse dielectric.

14 . The antifuse structure according to claim 13 , further comprising:

a third pair of metal sidewall spacers arranged on opposite sides of a third tapered pedestal; and

a third fuse dielectric on top of the third tapered pedestal and between the third pair of metal sidewall spacers, wherein a breakdown voltage of the third fuse dielectric is different than a breakdown voltage of the first fuse dielectric, a breakdown voltage of the second fuse dielectric, or both.

15 . The antifuse structure according to claim 13 , wherein a distance between the first pair of metal sidewall spacers measured at a top of the first tapered pedestal is smaller than a distance between the first pair of metal sidewall spacers measured at a bottom of the first tapered pedestal.

16 . The antifuse structure according to claim 13 , wherein a vertical thickness of the first fuse dielectric is less than a vertical thickness of the first tapered pedestal, and a vertical thickness of the second fuse dielectric is less than a vertical thickness of the second tapered pedestal.

17 . The antifuse structure according to claim 13 , wherein the first tapered pedestal and the second tapered pedestal are made from an interlevel dielectric material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2023
From: DUTTA, ASHIM; YANG, CHIH-CHAO; KATAKAM, SHRAVANA KUMAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 064929/0974 →
Continuity (1)
Related Publication 20250096123A1 · Mar 20, 2025
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